公开(公告)号：US20180219007A1

公开(公告)日：2018-08-02

申请号：US15883591

申请日：2018-01-30

Applicant: INDIAN INSTITUTE OF SCIENCE

Inventor： Mayank SHRIVASTAVA ,  Milova PAUL ,  Christian RUSS ,  Harald GOSSNER

IPC: H01L27/02 ,  H01L29/74

CPC classification number: H01L27/0262 ,  H01L27/0296 ,  H01L29/742 ,  H01L29/7436 ,  H01L29/785

Abstract: The present disclosure relates to a Silicon Controlled Rectifier (SCR) in non-planar technology to provide a robust ESD protection in System on Chip employing non-planar technologies. The disclosed SCR incorporates wire or fin shaped nanostructures extending from p-type tap to cathode, from the cathode to anode, and from the anode to n-type tap to provide parallel trigger paths to prevent problem of current crowding at the base emitter junction that limits efficient turn-on in conventional SCRs. The proposed structure helps in offering lower trigger and holding voltage, and therefore very high failure currents. The disclosed SCR has sub-3V trigger and holding voltage to provide an efficient and robust ESD protection in SOCs. The proposed device also offers three times better ESD robustness per unit area. Further the proposed SCR has no added capacitive loading and is compatible with standard process flow and design rules.

公开(公告)号：US20190013310A1

公开(公告)日：2019-01-10

申请号：US15883306

申请日：2018-01-30

Applicant: INDIAN INSTITUTE OF SCIENCE

Inventor： Milova PAUL ,  Mayank SHRIVASTAVA ,  B. Sampath KUMAR ,  Christian RUSS ,  Harald GOSSNER

IPC: H01L27/02 ,  H01L29/74 ,  H01L29/78 ,  H01L29/06 ,  H01L29/20

Abstract: The present disclosure relates to a Dual Fin SCR device having two parallel fins on which cathode, anode, n- and p- type triggering taps are selectively doped, wherein one Fin (or group of parallel Fins) comprises anode and n-tap, and other Fin (or group of parallel Fins) comprises cathode and p-tap. As key regions of the proposed SCR (anode and cathode), which carry majority of current after triggering, are placed diagonally, they provide substantial benefit in terms of spreading current and dissipating heat. The proposed SCR ESD protection device helps obtain regenerative feedback between base—collector junctions of two back-to-back bipolar transistors, which enables the proposed SCR to shunt ESD current. The proposed SCR design enables lower trigger and holding voltage for efficient and robust ESD protection. The proposed SCR device/design helps offer a tunable trigger voltage and a holding voltage with highfailure threshold.

公开(公告)号：US20180226317A1

公开(公告)日：2018-08-09

申请号：US15883749

申请日：2018-01-30

Applicant: INDIAN INSTITUTE OF SCIENCE

Inventor： Mayank SHRIVASTAVA ,  Milova PAUL ,  Christian RUSS ,  Harald GOSSNER

IPC: H01L23/367 ,  H01L27/088 ,  H01L29/423 ,  H01L29/06 ,  H01L29/861 ,  H01L29/735 ,  H01L29/74

CPC classification number: H01L23/367 ,  H01L27/0248 ,  H01L27/0886 ,  H01L29/0649 ,  H01L29/0657 ,  H01L29/42356 ,  H01L29/735 ,  H01L29/7436 ,  H01L29/861 ,  H01L29/8613

Abstract: The present disclosure relates to a thermal management solution for ESD protection devices in advanced Fin- and/or Nanowire-based technology nodes, by employing localized nano heat sinks, which enable heat transport from local hot spots to surface of chip, which allows significant reduction in peak temperature for a given ESD current. In an aspect, the proposed semiconductor device can include at least one fin having a source and a drain disposed over a p-well or a n-well in a substrate; an electrically floating dummy metal gate disposed close to drain or hot spot over at least a portion of the at least one fin, and an electrical metal gate is disposed close to the source; and a nano-heat sink operatively coupled with the dummy metal gate and terminating at the surface of chip in which the semiconductor device is configured so as to enable transfer of heat received from the at least one fin through the dummy metal gate to the surface of the chip.