公开(公告)号：US20210008618A1

公开(公告)日：2021-01-14

申请号：US17033934

申请日：2020-09-28

Applicant: Industrial Technology Research Institute

Inventor： Yi-Tsung Pan ,  Jer-Young Chen ,  Chuan-Sheng Chuang ,  Shinn-Jen Chang ,  Chi-San Chen ,  Li-Shing Chou

IPC: B22F3/10 ,  B22F3/105 ,  B22F1/00

Abstract: Provided is a forming method of a metal layer suitable for a 3D printing process. The method includes the steps of (1) providing first metal particles on a substrate to form a first layer; (2) performing a first pre-heat treatment on the first layer; (3) applying an oxide-removing agent on selected first metal particles in the first layer to remove metal oxides; (4) providing second metal particles on the first layer to form a second layer; (5) performing a second pre-heat treatment on the second layer; (6) applying the oxide-removing agent on selected second metal particles in the second layer to remove metal oxides; repeating (1) to (6) until a latent part is formed; performing a first heat treatment on the first and second metal particles of the latent part to form a near shape; and performing a second heat treatment on the near shape to form a sintered body.

公开(公告)号：US20200209196A1

公开(公告)日：2020-07-02

申请号：US16235650

申请日：2018-12-28

Applicant: Industrial Technology Research Institute

Inventor： Yao-Long Tsai ,  Tai-Ping Tsai ,  Li-Hua Wang ,  Yi-Tsung Pan

IPC: G01N29/12 ,  G01N29/44

Abstract: A sound source device and a signal receiver are disposed at first and second ports of a target object, respectively. A sound of a specific frequency of the sound source device is introduced into the target object to generate a resonant sound wave. A computer simulates a signal generated when the resonant sound wave is received by the signal receiver and regarding the signal as reference information. The reference information comprises first data having characteristics of the resonant sound wave, and data having features of an imaginary defect formed on the target object. The features of the imaginary defect correspond to the characteristics of the resonant sound wave. When the target object has a real defect, the sound of the specific frequency of the sound source device is introduced into the target object. Features of the real defect are derived by comparing the first data with the second data.

公开(公告)号：US20200147683A1

公开(公告)日：2020-05-14

申请号：US16676444

申请日：2019-11-07

Applicant: Industrial Technology Research Institute

Inventor： Yi-Tsung Pan ,  Jer-Young Chen ,  Chuan-Sheng Chuang ,  Shinn-Jen Chang ,  Chi-San Chen ,  Li-Shing Chou

IPC: B22F1/00 ,  B22F3/105

Abstract: Provided is a forming method of a metal layer suitable for a 3D printing process. The method includes the steps of providing a plurality of metal particles on a substrate; applying an oxide-removing agent to the metal particles to remove metal oxides on the metal particles; at a first temperature, performing a first heat treatment on the metal particles for which the metal oxides are removed to form a near shape; and at a second temperature, performing a second heat treatment on the near shape to form a sintered body. The first temperature is lower than the second temperature.

公开(公告)号：US10308999B2

公开(公告)日：2019-06-04

申请号：US14974127

申请日：2015-12-18

Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

Inventor： Li-Shing Chou ,  Yen-Yu Hou ,  Chih-Chao Yang ,  Yi-Tsung Pan

IPC: C22C33/00 ,  C22C38/02 ,  C23C4/06 ,  C23C4/08 ,  C22C38/32 ,  C23C4/131 ,  C23C4/134 ,  C23C4/137 ,  B23K26/354 ,  C22C38/22 ,  C22C33/02 ,  C22C38/00 ,  C23C4/18 ,  B23K26/00 ,  B23K101/34 ,  B23K103/04

Abstract: A method of manufacturing an iron-based alloy coating is provided, which includes (a) providing an iron-based alloy powder having a chemical formula of FeaCrbMocSidBeYf, wherein 48≤a≤50; 21≤b≤23; 18≤c≤20; 2≤d≤3; 2≤e≤4; and 0

公开(公告)号：US10510287B2

公开(公告)日：2019-12-17

申请号：US16055179

申请日：2018-08-06

Applicant: Industrial Technology Research Institute

Inventor： Kang-Feng Lee ,  Yi-Tsung Pan

IPC: G09G3/32 ,  B41F16/00 ,  H01L21/683 ,  B82Y40/00 ,  B29C39/14 ,  B29C65/00 ,  H01L33/00 ,  B44C3/00

Abstract: A transfer method for expanding pitches of devices includes: providing a first substrate with micro devices having the pitches being a predetermined value in a first direction and a second direction; transferring the micro devices to a first roller by contacting it with the micro devices, wherein a pitch of contact line portions on the first roller is N times of the predetermined value; transferring the micro devices on the first roller to a second substrate; rotating the second substrate by 90 degrees; transferring the micro devices to a second roller by rolling the second roller to contact the micro devices; and then transferring the micro devices to a third substrate to expand the pitch of the micro devices in both the first and the second directions. The portions in contact with the micro devices all have adhesive layers with different adhesion operation windows.

公开(公告)号：US09340875B2

公开(公告)日：2016-05-17

申请号：US14096390

申请日：2013-12-04

Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

Inventor： Yi-Tsung Pan ,  Mu-Jen Young

IPC: C23C16/00 ,  C23C16/44 ,  H01L21/02 ,  C23C16/455 ,  C23C16/458

CPC classification number: C23C16/4412 ,  C23C16/45508 ,  C23C16/4584 ,  H01L21/02538 ,  H01L21/0254 ,  H01L21/02551 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262

Abstract: A reaction device for chemical vapor deposition is disclosed. The reaction device includes a chamber, a susceptor, an inlet pipe unit and an outlet pipe. The susceptor is disposed within the chamber. The inlet pipe unit includes a plurality of feeding openings horizontally facing the peripheral area of the susceptor to input at least one reaction gas into the chamber. The at least one reaction gas is guided to move from the peripheral area of the susceptor and along a surface of the susceptor to reach the center of the susceptor. The outlet pipe includes a discharge opening whose position is corresponding to the center of the susceptor so as to discharge the reaction gas flowing to the center of the susceptor out of the chamber.

Abstract translation: 公开了用于化学气相沉积的反应装置。 反应装置包括室，基座，入口管单元和出口管。 基座设置在室内。 入口管单元包括水平地面对基座的周边区域的多个供给开口，以将至少一个反应气体输入到室中。 引导至少一个反应气体从基座的周边区域和基座的表面移动以到达基座的中心。 出口管包括排出口，该排出口的位置对应于基座的中心，以便将流过基座中心的反应气体排出室外。

公开(公告)号：US11525811B2

公开(公告)日：2022-12-13

申请号：US16235650

申请日：2018-12-28

Applicant: Industrial Technology Research Institute

Inventor： Yao-Long Tsai ,  Tai-Ping Tsai ,  Li-Hua Wang ,  Yi-Tsung Pan

IPC: G01N29/12 ,  G01N29/44 ,  G01N29/11 ,  G01N29/04 ,  G01N29/48 ,  G01N29/46

Abstract: A sound source device and a signal receiver are disposed at first and second ports of a target object, respectively. A sound of a specific frequency of the sound source device is introduced into the target object to generate a resonant sound wave. A computer simulates a signal generated when the resonant sound wave is received by the signal receiver and regarding the signal as reference information. The reference information comprises first data having characteristics of the resonant sound wave, and data having features of an imaginary defect formed on the target object. The features of the imaginary defect correspond to the characteristics of the resonant sound wave. When the target object has a real defect, the sound of the specific frequency of the sound source device is introduced into the target object. Features of the real defect are derived by comparing the first data with the second data.

公开(公告)号：US20190043416A1

公开(公告)日：2019-02-07

申请号：US16055179

申请日：2018-08-06

Applicant: Industrial Technology Research Institute

Inventor： Kang-Feng Lee ,  Yi-Tsung Pan

IPC: G09G3/32 ,  B41F16/00

Abstract: A transfer method for expanding pitches of devices includes: providing a first substrate with micro devices having the pitches being a predetermined value in a first direction and a second direction; transferring the micro devices to a first roller by contacting it with the micro devices, wherein a pitch of contact line portions on the first roller is N times of the predetermined value; transferring the micro devices on the first roller to a second substrate; rotating the second substrate by 90 degrees; transferring the micro devices to a second roller by rolling the second roller to contact the micro devices; and then transferring the micro devices to a third substrate to expand the pitch of the micro devices in both the first and the second directions. The portions in contact with the micro devices all have adhesive layers with different adhesion operation windows.