公开(公告)号：US09496237B2

公开(公告)日：2016-11-15

申请号：US14715778

申请日：2015-05-19

Applicant: Infineon Technologies AG

Inventor： Gottfried Beer ,  Raimund Foerg ,  Juergen Hoegerl

IPC: H01L23/00 ,  H01L23/522 ,  H01L23/48

CPC classification number: H01L24/14 ,  H01L23/481 ,  H01L23/5226 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L25/0657 ,  H01L2224/0345 ,  H01L2224/03462 ,  H01L2224/0347 ,  H01L2224/03614 ,  H01L2224/0381 ,  H01L2224/039 ,  H01L2224/03912 ,  H01L2224/03914 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/04073 ,  H01L2224/05073 ,  H01L2224/05082 ,  H01L2224/05083 ,  H01L2224/05155 ,  H01L2224/05164 ,  H01L2224/05166 ,  H01L2224/05184 ,  H01L2224/05552 ,  H01L2224/05555 ,  H01L2224/05562 ,  H01L2224/05564 ,  H01L2224/05582 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/0603 ,  H01L2224/06051 ,  H01L2224/06131 ,  H01L2224/06132 ,  H01L2224/06133 ,  H01L2224/06135 ,  H01L2224/06136 ,  H01L2224/06177 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/1147 ,  H01L2224/11825 ,  H01L2224/119 ,  H01L2224/13012 ,  H01L2224/13014 ,  H01L2224/13022 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/13083 ,  H01L2224/13111 ,  H01L2224/13144 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/13562 ,  H01L2224/13644 ,  H01L2224/1403 ,  H01L2224/14051 ,  H01L2224/14131 ,  H01L2224/14132 ,  H01L2224/14133 ,  H01L2224/14135 ,  H01L2224/14136 ,  H01L2224/14177 ,  H01L2224/16145 ,  H01L2224/26145 ,  H01L2224/32145 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48472 ,  H01L2224/73204 ,  H01L2224/73207 ,  H01L2224/81191 ,  H01L2224/81193 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06568 ,  H01L2924/13055 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/01015 ,  H01L2924/01074 ,  H01L2924/00012 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2224/03464

Abstract: A semiconductor device includes a semiconductor chip and a plurality of electrical contact pads disposed on a main face of the semiconductor chip, wherein the electrical contact pads each include a layer stack, each layer stack having one and the same order of layers, and wherein the electrical contact pads are both solderable and bondable.

Abstract translation: 半导体器件包括半导体芯片和设置在半导体芯片的主面上的多个电接触焊盘，其中电接触焊盘各自包括层堆叠，每个层堆叠具有一层且相同的层数，并且其中 电接触焊盘都是可焊接和可焊接的。

公开(公告)号：US20140070232A1

公开(公告)日：2014-03-13

申请号：US13776796

申请日：2013-02-26

Applicant: Infineon Technologies AG

Inventor： Rudolf Berger ,  Hermann Gruber ,  Wolfgang Lehnert ,  Guenther Ruhl ,  Raimund Foerg ,  Anton Mauder ,  Hans-Joachim Schulze

IPC: H01L21/762 ,  H01L29/16

CPC classification number: H01L21/76251 ,  H01L21/02002 ,  H01L21/0237 ,  H01L21/0243 ,  H01L21/02527 ,  H01L21/02601 ,  H01L21/02628 ,  H01L21/7624 ,  H01L29/02 ,  H01L29/04 ,  H01L29/16 ,  H01L29/1608 ,  H01L29/161

Abstract: A composite wafer including a carrier substrate having a graphite core and a monocrystalline semiconductor substrate or layer attached to the carrier substrate and a corresponding method for manufacturing such a composite wafer is provided.

Abstract translation: 提供了一种复合晶片，其包括具有石墨芯和附着于载体基板的单晶半导体衬底或层的载体衬底和用于制造这种复合晶片的相应方法。

公开(公告)号：US20150333023A1

公开(公告)日：2015-11-19

申请号：US14715778

申请日：2015-05-19

Applicant: Infineon Technologies AG

Inventor： Gottfried Beer ,  Raimund Foerg ,  Juergen Hoegerl

IPC: H01L23/00

CPC classification number: H01L24/14 ,  H01L23/481 ,  H01L23/5226 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L25/0657 ,  H01L2224/0345 ,  H01L2224/03462 ,  H01L2224/0347 ,  H01L2224/03614 ,  H01L2224/0381 ,  H01L2224/039 ,  H01L2224/03912 ,  H01L2224/03914 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/04073 ,  H01L2224/05073 ,  H01L2224/05082 ,  H01L2224/05083 ,  H01L2224/05155 ,  H01L2224/05164 ,  H01L2224/05166 ,  H01L2224/05184 ,  H01L2224/05552 ,  H01L2224/05555 ,  H01L2224/05562 ,  H01L2224/05564 ,  H01L2224/05582 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/0603 ,  H01L2224/06051 ,  H01L2224/06131 ,  H01L2224/06132 ,  H01L2224/06133 ,  H01L2224/06135 ,  H01L2224/06136 ,  H01L2224/06177 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/1147 ,  H01L2224/11825 ,  H01L2224/119 ,  H01L2224/13012 ,  H01L2224/13014 ,  H01L2224/13022 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/13083 ,  H01L2224/13111 ,  H01L2224/13144 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/13562 ,  H01L2224/13644 ,  H01L2224/1403 ,  H01L2224/14051 ,  H01L2224/14131 ,  H01L2224/14132 ,  H01L2224/14133 ,  H01L2224/14135 ,  H01L2224/14136 ,  H01L2224/14177 ,  H01L2224/16145 ,  H01L2224/26145 ,  H01L2224/32145 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48472 ,  H01L2224/73204 ,  H01L2224/73207 ,  H01L2224/81191 ,  H01L2224/81193 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06568 ,  H01L2924/13055 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/01015 ,  H01L2924/01074 ,  H01L2924/00012 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2224/03464

Abstract: A semiconductor device includes a semiconductor chip and a plurality of electrical contact pads disposed on a main face of the semiconductor chip, wherein the electrical contact pads each include a layer stack, each layer stack having one and the same order of layers, and wherein the electrical contact pads are both solderable and bondable.

Abstract translation: 半导体器件包括半导体芯片和设置在半导体芯片的主面上的多个电接触焊盘，其中电接触焊盘各自包括层堆叠，每个层堆叠具有一层且相同的层数，并且其中 电接触焊盘都是可焊接和可焊接的。

公开(公告)号：US09224633B2

公开(公告)日：2015-12-29

申请号：US14340186

申请日：2014-07-24

Applicant: Infineon Technologies AG

Inventor： Rudolf Berger ,  Hermann Gruber ,  Wolfgang Lehnert ,  Guenther Ruhl ,  Raimund Foerg ,  Anton Mauder ,  Hans-Joachim Schulze ,  Karsten Kellermann ,  Michael Sommer ,  Christian Rottmair ,  Roland Rupp

IPC: H01L21/30 ,  H01L21/762 ,  H01L21/02 ,  H01L21/20 ,  C30B25/18 ,  H01L21/324

CPC classification number: H01L21/76254 ,  C30B25/186 ,  H01L21/02115 ,  H01L21/02282 ,  H01L21/02598 ,  H01L21/2007 ,  H01L21/265 ,  H01L21/3212 ,  H01L21/324 ,  H01L21/76251 ,  H01L29/1608 ,  H01L29/20 ,  H01L29/2003

Abstract: According to an embodiment, a composite wafer includes a carrier substrate having a graphite layer and a monocrystalline semiconductor layer attached to the carrier substrate.

Abstract translation: 根据实施例，复合晶片包括具有石墨层和附着到载体衬底的单晶半导体层的载体衬底。

公开(公告)号：US20140335676A1

公开(公告)日：2014-11-13

申请号：US14340186

申请日：2014-07-24

Applicant: Infineon Technologies AG

Inventor： Rudolf Berger ,  Hermann Gruber ,  Wolfgang Lehnert ,  Guenther Ruhl ,  Raimund Foerg ,  Anton Mauder ,  Hans-Joachim Schulze ,  Karsten Kellermann ,  Michael Sommer ,  Christian Rottmair ,  Roland Rupp

IPC: H01L21/762 ,  H01L21/02 ,  H01L21/324 ,  C30B25/18

CPC classification number: H01L21/76254 ,  C30B25/186 ,  H01L21/02115 ,  H01L21/02282 ,  H01L21/02598 ,  H01L21/2007 ,  H01L21/265 ,  H01L21/3212 ,  H01L21/324 ,  H01L21/76251 ,  H01L29/1608 ,  H01L29/20 ,  H01L29/2003

Abstract: According to an embodiment, a composite wafer includes a carrier substrate having a graphite layer and a monocrystalline semiconductor layer attached to the carrier substrate.

Abstract translation: 根据实施例，复合晶片包括具有石墨层和附着到载体衬底的单晶半导体层的载体衬底。

公开(公告)号：US10571681B2

公开(公告)日：2020-02-25

申请号：US15682671

申请日：2017-08-22

Applicant: Infineon Technologies AG

Inventor： Roland Meier ,  Klemens Pruegl ,  Bernhard Winkler ,  Thomas Popp ,  Raimund Foerg

IPC: G02B26/00 ,  B81C1/00

Abstract: Embodiments relate to microelectromechanical systems (MEMS) and more particularly to membrane structures comprising pixels for use in, e.g., display devices. In embodiments, a membrane structure comprises a monocrystalline silicon membrane above a cavity formed over a silicon substrate. The membrane structure can comprise a light interference structure that, depending upon a variable distance between the membrane and the substrate, transmits or reflects different wavelengths of light. Related devices, systems and methods are also disclosed.

公开(公告)号：US20170371148A1

公开(公告)日：2017-12-28

申请号：US15682671

申请日：2017-08-22

Applicant: Infineon Technologies AG

Inventor： Roland Meier ,  Klemens Pruegl ,  Bernhard Winkler ,  Thomas Popp ,  Raimund Foerg

IPC: G02B26/00 ,  B81C1/00

CPC classification number: G02B26/001 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/0264 ,  B81B2201/047 ,  B81C1/00158 ,  B81C1/00476 ,  B81C1/00539 ,  G02B26/007

Abstract: Embodiments relate to microelectromechanical systems (MEMS) and more particularly to membrane structures comprising pixels for use in, e.g., display devices. In embodiments, a membrane structure comprises a monocrystalline silicon membrane above a cavity formed over a silicon substrate. The membrane structure can comprise a light interference structure that, depending upon a variable distance between the membrane and the substrate, transmits or reflects different wavelengths of light. Related devices, systems and methods are also disclosed.

公开(公告)号：US09355984B2

公开(公告)日：2016-05-31

申请号：US13944927

申请日：2013-07-18

Applicant: Infineon Technologies AG

Inventor： Irmgard Escher-Poeppel ,  Eduard Knauer ,  Thomas Kunstmann ,  Peter Scherl ,  Raimund Foerg

IPC: H01L23/00 ,  H01L23/373

CPC classification number: H01L24/29 ,  H01L23/3736 ,  H01L24/27 ,  H01L24/743 ,  H01L24/83 ,  H01L24/94 ,  H01L2224/27332 ,  H01L2224/27848 ,  H01L2224/29247 ,  H01L2224/29647 ,  H01L2224/32145 ,  H01L2224/32245 ,  H01L2224/83011 ,  H01L2224/83065 ,  H01L2224/83193 ,  H01L2224/83203 ,  H01L2224/8384 ,  H01L2224/85547 ,  H01L2924/10253 ,  H01L2924/10271 ,  H01L2924/10272 ,  H01L2924/10329 ,  H01L2924/12042 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/01001 ,  H01L2924/20106 ,  H01L2924/00

Abstract: An embodiment method for fabricating electronic devices having two components connected by a metal layer includes applying a metal layer to each component and connecting the metal layers such that a single metal layer is formed.

Abstract translation: 用于制造具有通过金属层连接的两个部件的电子器件的实施例方法包括将金属层施加到每个部件并连接金属层，使得形成单个金属层。

公开(公告)号：US09337275B2

公开(公告)日：2016-05-10

申请号：US14166553

申请日：2014-01-28

Applicant: Infineon Technologies AG

Inventor： Guenther Ruhl ,  Raimund Foerg

IPC: H01L21/8232 ,  H01L29/16 ,  H01L29/45 ,  H01L21/285 ,  H01L29/66

CPC classification number: H01L29/1606 ,  H01L21/043 ,  H01L21/28518 ,  H01L21/28556 ,  H01L29/45 ,  H01L29/66015

Abstract: An electrical or electronic device is disclosed. In some embodiments, an electrical device includes a single-layer graphene part extending in a lateral direction and a multi-layer graphene structure laterally contacting the single-layer graphene part. The electrical or electronic device further includes a graphite part in contact with a surface of the multi-layer graphene structure. In other embodiments, an electrical device includes a graphene part extending in a lateral direction and a graphite part is configured to provide a lateral contact for the graphene part.

Abstract translation: 公开了电气或电子设备。 在一些实施例中，电气装置包括沿横向方向延伸的单层石墨烯部分和横向接触单层石墨烯部分的多层石墨烯结构。 电气或电子设备还包括与多层石墨烯结构的表面接触的石墨部分。 在其它实施例中，电气装置包括在横向方向上延伸的石墨烯部分，并且石墨部分构造成为石墨烯部分提供侧向接触。

公开(公告)号：US20160086844A1

公开(公告)日：2016-03-24

申请号：US14962393

申请日：2015-12-08

Applicant: Infineon Technologies AG

Inventor： Rudolf Berger ,  Hermann Gruber ,  Wolfgang Lehnert ,  Guenther Ruhl ,  Raimund Foerg ,  Anton Mauder ,  Hans-Joachim Schulze ,  Karsten Kellermann ,  Michael Sommer ,  Christian Rottmair ,  Roland Rupp

IPC: H01L21/762 ,  H01L21/321 ,  H01L21/265 ,  H01L29/20 ,  H01L21/324 ,  H01L21/02 ,  H01L29/16

CPC classification number: H01L21/76254 ,  C30B25/186 ,  H01L21/02115 ,  H01L21/02282 ,  H01L21/02598 ,  H01L21/2007 ,  H01L21/265 ,  H01L21/3212 ,  H01L21/324 ,  H01L21/76251 ,  H01L29/1608 ,  H01L29/20 ,  H01L29/2003

Abstract: A composite wafer is manufactured by providing a carrier wafer including graphite and a protective layer, forming a bonding layer, and bonding the carrier wafer to a semiconductor wafer through the bonding layer.

Abstract translation: 通过提供包括石墨和保护层的载体晶片来形成复合晶片，形成结合层，并通过粘合层将载体晶片接合到半导体晶片。