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    Solid CO2 cleaning
    1.
    发明申请
    Solid CO2 cleaning 失效
    固体二氧化碳清洗

    公开(公告)号：US20040112406A1

    公开(公告)日：2004-06-17

    申请号：US10320836

    申请日：2002-12-16

    Applicant: International Business Machines Corporation

    Inventor： John M. Cotte ,  Catherine Ivers ,  Kenneth J. McCullough ,  Wayne M. Moreau ,  Robert J. Purtell ,  John P. Simons ,  William A. Syverson ,  Charles J. Taft

    IPC: C25F001/00

    CPC classification number: B08B7/0021 ,  H01L21/02063 ,  Y10S134/902

    Abstract: A method and apparatus are provided for removing solid and/or liquid residues from electronic components such as semiconductor wafers utilizing liquid or supercritical carbon dioxide which is solidified on the surface of the wafer and then vaporized and removed from the system. In a preferred embodiment the solidification and vaporizing steps are repeated (cycled) before removal of the CO2 from the vessel. The residues are carried away with the vaporized carbon dioxide.

    Abstract translation: 提供了一种方法和装置，用于从诸如半导体晶片的电子部件中除去固体和/或液体残留物，其中所述液体或超临界二氧化碳在晶片的表面上固化，然后蒸发并从系统中除去。 在优选的实施方案中，在从容器中除去CO 2之前重复（循环）固化和蒸发步骤。 残余物被蒸发的二氧化碳带走。

    Developer/rinse formulation to prevent image collapse in resist
    2.
    发明申请
    Developer/rinse formulation to prevent image collapse in resist 失效

    公开(公告)号：US20020115022A1

    公开(公告)日：2002-08-22

    申请号：US09790160

    申请日：2001-02-21

    Applicant: International Business Machines Corporation

    Inventor： Scott A. Messick ,  Wayne M. Moreau ,  Christopher F. Robinson

    IPC: G03F007/20 ,  G03F007/32 ,  G03F007/40

    CPC classification number: G03F7/322 ,  G03F7/32 ,  G03F7/40

    Abstract: An apparatus and method are provided for developing photoresist patterns on electronic component substrates such as semiconductor wafers. The method and apparatus use a specially defined developer composition in sequence with a specially defined rinse composition to develop an exposed photoresist pattern and then to rinse the developed pattern. Both the developer composition and rinse composition contain an anionic surfactant and, when the solutions are used in sequence, have been found to provide a resist pattern which avoids pattern collapse even when small features such as line widths less than 150 nm with aspect ratios of greater than about 3 are formed. It is preferred to use a puddle developing and puddle rinsing process to develop and rinse the exposed wafer. Preferred anionic surfactants are ammonium perfluoroalkyl sulfonate and ammonium perfluoroalkyl carboxylate.

    Radiation sensitive silicon-containing negative resists and use thereof
    3.
    发明申请
    Radiation sensitive silicon-containing negative resists and use thereof 有权
    辐射敏感含硅负极抗蚀剂及其用途

    公开(公告)号：US20020115017A1

    公开(公告)日：2002-08-22

    申请号：US09785609

    申请日：2001-02-16

    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

    Inventor： Marie Angelopoulos ,  Ari Aviram ,  Wu-Song Huang ,  Ranee W. Kwong ,  Robert N. Lang ,  Qinghuang Lin ,  Wayne M. Moreau

    IPC: G03F007/00

    CPC classification number: G03F7/0757 ,  G03F7/0045 ,  Y10S430/106

    Abstract: A negative resist composition, comprising: (a) silicon-containing polymer with pendant fused moieties selected from the group consisting of fused aliphatic moieties, homocyclic fused aromatic moieties, and heterocyclic fused aromatic and sites for reaction with a crosslinking agent, (b) an acid-sensitive crosslinking agent, and (c) a radiation-sensitive acid generator is provided. The resist composition is used to form a patterned material layer in a substrate.

    Abstract translation: 负性抗蚀剂组合物，其包含：（a）具有选自稠合脂族部分，稠环稠合芳族部分和杂环稠合芳族化合物的侧链稠合部分和与交联剂反应的位点的含硅聚合物，（b） 酸敏感性交联剂，和（c）辐射敏感性酸发生剂。 抗蚀剂组合物用于在基材中形成图案化的材料层。

    Method of insitu monitoring of supercritical fluid process conditions
    4.
    发明申请
    Method of insitu monitoring of supercritical fluid process conditions 失效
    超临界流体工艺条件的现场监测方法

    公开(公告)号：US20040113079A1

    公开(公告)日：2004-06-17

    申请号：US10320835

    申请日：2002-12-16

    Applicant: International Business Machines Corporation

    Inventor： John M. Cotte ,  Kenneth J. McCullough ,  Wayne M. Moreau ,  Keith R. Pope ,  Robert J. Purtell ,  John P. Simons ,  Charles J. Taft

    IPC: G01N021/35

    CPC classification number: G01N21/359 ,  G01N21/3504

    Abstract: A method and apparatus are provided for in situ monitoring and analyzing of process parameters for semiconductor fabrication processes including cleaning semiconductor wafers utilizing a supercritical fluid or a high pressure liquid such as CO2. The method and apparatus utilize a spectrometer having a reflective mirror proximate the vessel holding the high pressure fluid. NIR radiation transmitted into the vessel through a window and out of the vessel through an opposed window is reflected and detected and measured and the composition of the fluid in the pressure vessel is determined allowing the user to control process parameters based on the measured composition.

    Abstract translation: 提供了一种用于半导体制造工艺的工艺参数的现场监测和分析的方法和装置，包括利用超临界流体或诸如CO 2的高压液体清洗半导体晶片。 该方法和装置利用具有靠近保持高压流体的容器的反射镜的光谱仪。 通过窗口传输到容器中并通过相对的窗口传出容器的NIR辐射被反射和检测和测量，并且确定压力容器中的流体的组成，允许用户基于测量的组成来控制工艺参数。

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