公开(公告)号：US20130164896A1

公开(公告)日：2013-06-27

申请号：US13717925

申请日：2012-12-18

Applicant: Intersil Americas Inc.

Inventor： Dev Alok Girdhar ,  Francois Hebert

IPC: H01L29/66

CPC classification number: H01L27/088

Abstract: A voltage converter includes an output circuit having a high side device and a low side device which can be formed on a single die (i.e. a “PowerDie”) and connected to each other through a semiconductor substrate. Both the high side device and the low side device can include lateral diffused metal oxide semiconductor (LDMOS) transistors. Because both output transistors include the same type of transistors, the two devices can be formed simultaneously, thereby reducing the number of photomasks over other voltage converter designs. The voltage converter can further include a controller circuit on a different die which can be electrically coupled to, and co-packaged with, the PowerDie.

Abstract translation: 电压转换器包括具有高侧器件的输出电路和可以形成在单个管芯（即“PowerDie”）上并通过半导体衬底相互连接的低侧器件。 高侧器件和低侧器件都可以包括横向扩散的金属氧化物半导体（LDMOS）晶体管。 因为两个输出晶体管都包含相同类型的晶体管，所以可以同时形成两个器件，从而减少超过其它电压转换器设计的光掩模数量。 电压转换器还可以包括在不同的管芯上的控制器电路，其可以与PowerDie电耦合并与其一体化。

公开(公告)号：US08691670B2

公开(公告)日：2014-04-08

申请号：US13717899

申请日：2012-12-18

Applicant: Intersil Americas Inc.

Inventor： Rick Carlton Jerome ,  Francois Hebert ,  Craig McLachlan ,  Kevin Hoopingarner

IPC: H01L21/20 ,  H01L21/36

CPC classification number: H01L21/02107

Abstract: A method and structure for a semiconductor device, the device including a handle wafer, a diamond layer formed directly on a front side of the handle wafer, and a thick oxide layer formed directly on a back side of the handle wafer, the oxide layer of a thickness to counteract tensile stresses of the diamond layer. Nitride layers are formed on outer surfaces of the diamond layer and thick oxide layer and a polysilicon is formed on outer surfaces of the nitride layers. A device wafer is bonded to the handle wafer to form the semiconductor device.

Abstract translation: 一种半导体器件的方法和结构，所述器件包括处理晶片，直接形成在所述手柄晶片前侧的金刚石层，以及直接形成在所述手柄晶片的背面上的厚氧化物层，所述氧化物层 抵消金刚石层的拉伸应力的厚度。 氮化物层形成在金刚石层和厚氧化物层的外表面上，并且在氮化物层的外表面上形成多晶硅。 器件晶片被结合到处理晶片以形成半导体器件。

公开(公告)号：US08546221B2

公开(公告)日：2013-10-01

申请号：US13717925

申请日：2012-12-18

Applicant: Intersil Americas Inc.

Inventor： Dev Alok Girdhar ,  Francois Hebert

IPC: H01L21/8234

CPC classification number: H01L27/088

Abstract: A voltage converter includes an output circuit having a high side device and a low side device which can be formed on a single die (i.e. a “PowerDie”) and connected to each other through a semiconductor substrate. Both the high side device and the low side device can include lateral diffused metal oxide semiconductor (LDMOS) transistors. Because both output transistors include the same type of transistors, the two devices can be formed simultaneously, thereby reducing the number of photomasks over other voltage converter designs. The voltage converter can further include a controller circuit on a different die which can be electrically coupled to, and co-packaged with, the PowerDie.

Abstract translation: 电压转换器包括具有高侧器件的输出电路和可以形成在单个管芯（即“PowerDie”）上并通过半导体衬底相互连接的低侧器件。 高侧器件和低侧器件都可以包括横向扩散的金属氧化物半导体（LDMOS）晶体管。 因为两个输出晶体管都包含相同类型的晶体管，所以可以同时形成两个器件，从而减少超过其它电压转换器设计的光掩模数量。 电压转换器还可以包括在不同的管芯上的控制器电路，其可以与PowerDie电耦合并与其一体化。

公开(公告)号：US20130157416A1

公开(公告)日：2013-06-20

申请号：US13717899

申请日：2012-12-18

Applicant: INTERSIL AMERICAS INC.

Inventor： Rick Carlton Jerome ,  Francois Hebert ,  Craig McLachlan ,  Kevin Hoopingarner

IPC: H01L21/02

CPC classification number: H01L21/02107

Abstract: A method and structure for a semiconductor device, the device including a handle wafer, a diamond layer formed directly on a front side of the handle wafer, and a thick oxide layer formed directly on a back side of the handle wafer, the oxide of a thickness to counteract tensile stresses of the diamond layer. Nitride layers are formed on the outer surfaces of the diamond layer and thick oxide layer and a polysilicon is formed on outer surfaces of the nitride layers. A device wafer is bonded to the handle wafer to form the semiconductor device.

Abstract translation: 一种用于半导体器件的方法和结构，所述器件包括处理晶片，直接形成在所述手柄晶片前侧上的金刚石层以及直接形成在所述手柄晶片的背面上的厚氧化物层，所述氧化物 抵抗金刚石层的拉伸应力的厚度。 在金刚石层和厚氧化物层的外表面上形成氮化物层，并且在氮化物层的外表面上形成多晶硅。 器件晶片被结合到处理晶片以形成半导体器件。