公开(公告)号：US11031493B2

公开(公告)日：2021-06-08

申请号：US16431151

申请日：2019-06-04

Applicant: Indian Institute of Science

Inventor： Mayank Shrivastava ,  Vipin Joshi

IPC: H01L29/778 ,  H01L29/20 ,  H01L29/205 ,  H01L29/207

Abstract: The present invention proposes a set of impurity doping configurations for GaN buffer in an AlGaN/GaN HEMT device to improve breakdown characteristics of the device. The breakdown characteristics depend on a unique mix of donor and acceptor traps and using carbon as a dopant increases both donor and acceptor trap concentrations, resulting in a trade-off in breakdown voltage improvement and device performance. A modified silicon and carbon co-doping is proposed, which enables independent control over donor and acceptor trap concentrations in the buffer, thus potentially improving breakdown characteristics of the device without adversely affecting the device performance.