公开(公告)号：US20040126707A1

公开(公告)日：2004-07-01

申请号：US10329449

申请日：2002-12-27

Applicant: Industrial Technology Research Institute

Inventor： Ming-Yueh Liu ,  Heng-Chun Huang ,  Jauh-Jung Yang ,  Kun-Chih Pan

IPC: G03F007/00

CPC classification number: B81C1/00111 ,  A61B5/14514 ,  A61B5/150022 ,  A61B5/150282 ,  A61B5/150984 ,  A61M37/0015 ,  A61M2037/003 ,  A61M2037/0053 ,  B81B2201/055

Abstract: A method for manufacturing a 3-D high aspect-ratio microneedle array device, comprising steps of: providing a substrate, with a photoresist layer coated thereon; performing photolithography on the photoresist layer by using a gray-tone mask so as to form a patterned photoresist layer; performing high-selectivity etching on the patterned photoresist layer and the substrate by using inductively coupled plasma etching so as to transfer the pattern onto the substrate and form a structure; applying a material on the structure; and de-molding the structure from the substrate.

Abstract translation: 一种制造3-D高宽比微针阵列器件的方法，包括以下步骤：提供衬底，其上涂覆有光致抗蚀剂层; 通过使用灰色调掩模对光致抗蚀剂层进行光刻，以形成图案化的光致抗蚀剂层; 通过使用电感耦合等离子体蚀刻对图案化的光致抗蚀剂层和衬底进行高选择性蚀刻，以将图案转移到衬底上并形成结构; 在结构上施加材料; 以及从所述基底上去除所述结构。