公开(公告)号：US20200135564A1

公开(公告)日：2020-04-30

申请号：US16176403

申请日：2018-10-31

Applicant: Infineon Technologies AG

Inventor： Markus Zundel ,  Stefan Mieslinger ,  Thomas Ostermann ,  Christian Westermeier ,  Jochen Hilsenbeck ,  Jens Peter Konrath ,  Boris Mayerhofer ,  Anatoly Sotnikov

IPC: H01L21/78 ,  H01L21/04 ,  H01L29/16

Abstract: A semiconductor wafer having a main surface and a rear surface opposite from the main surface is provided. A die singulation preparation step is performed in kerf regions of the semiconductor wafer. The kerf regions enclose a plurality of die sites. The die singulation preparation step includes forming one or more preliminary kerf trenches between at least two immediately adjacent die sites. The method further includes forming active semiconductor devices in the die sites, and singulating the semiconductor wafer in the kerf regions thereby providing a plurality of discrete semiconductor dies from the die sites. The one or more preliminary kerf trenches are unfilled during the singulating, and the singulating includes removing semiconductor material from a surface of the semiconductor wafer that is between opposite facing sidewalls of the one or more preliminary kerf trenches.

公开(公告)号：US10672661B2

公开(公告)日：2020-06-02

申请号：US16176403

申请日：2018-10-31

Applicant: Infineon Technologies AG

Inventor： Markus Zundel ,  Stefan Mieslinger ,  Thomas Ostermann ,  Christian Westermeier ,  Jochen Hilsenbeck ,  Jens Peter Konrath ,  Boris Mayerhofer ,  Anatoly Sotnikov

IPC: H01L21/78 ,  H01L29/16 ,  H01L21/04 ,  H01L29/66 ,  H01L29/06 ,  H01L29/40

Abstract: A semiconductor wafer having a main surface and a rear surface opposite from the main surface is provided. A die singulation preparation step is performed in kerf regions of the semiconductor wafer. The kerf regions enclose a plurality of die sites. The die singulation preparation step includes forming one or more preliminary kerf trenches between at least two immediately adjacent die sites. The method further includes forming active semiconductor devices in the die sites, and singulating the semiconductor wafer in the kerf regions thereby providing a plurality of discrete semiconductor dies from the die sites. The one or more preliminary kerf trenches are unfilled during the singulating, and the singulating includes removing semiconductor material from a surface of the semiconductor wafer that is between opposite facing sidewalls of the one or more preliminary kerf trenches.