公开(公告)号：US20130330870A1

公开(公告)日：2013-12-12

申请号：US13685684

申请日：2012-11-26

Applicant: Infineon Technologies AG

Inventor： Karlheinz Mueller ,  Robert GRUENBERGER ,  WINKLER Bernhard

IPC: B81C1/00

CPC classification number: B81C1/00246 ,  B81B2201/0271 ,  B81C2203/0742

Abstract: Micro-electromechanical system (MEMS) devices and methods of manufacture thereof are disclosed. In one embodiment, a MEMS device includes a semiconductive layer disposed over a substrate. A trench is disposed in the semiconductive layer, the trench with a first sidewall and an opposite second sidewall. A first insulating material layer is disposed over an upper portion of the first sidewall, and a conductive material disposed within the trench. An air gap is disposed between the conductive material and the semiconductive layer.

公开(公告)号：US08993394B2

公开(公告)日：2015-03-31

申请号：US13685684

申请日：2012-11-26

Applicant: Infineon Technologies AG

Inventor： Karlheinz Mueller ,  Robert Gruenberger ,  Bernhard Winkler

IPC: H01L21/70 ,  B81C1/00

CPC classification number: B81C1/00246 ,  B81B2201/0271 ,  B81C2203/0742

Abstract: Micro-electromechanical system (MEMS) devices and methods of manufacture thereof are disclosed. In one embodiment, a MEMS device includes a semiconductive layer disposed over a substrate. A trench is disposed in the semiconductive layer, the trench with a first sidewall and an opposite second sidewall. A first insulating material layer is disposed over an upper portion of the first sidewall, and a conductive material disposed within the trench. An air gap is disposed between the conductive material and the semiconductive layer.

Abstract translation: 公开了微机电系统（MEMS）装置及其制造方法。 在一个实施例中，MEMS器件包括设置在衬底上的半导体层。 沟槽设置在半导体层中，沟槽具有第一侧壁和相对的第二侧壁。 第一绝缘材料层设置在第一侧壁的上部之上，并且设置在沟槽内的导电材料。 在导电材料和半导体层之间设置气隙。