公开(公告)号：US20240087995A1

公开(公告)日：2024-03-14

申请号：US18453639

申请日：2023-08-22

Applicant: Infineon Technologies AG

Inventor： Ralf Otremba ,  Thai Kee Gan ,  Teck Sim Lee ,  Chwee Pang Tommy Khoo ,  Christian Schiele ,  Katrin Unterhofer ,  Patrick Uredat

IPC: H01L23/495 ,  H01L23/00 ,  H01L25/00 ,  H01L25/07 ,  H01L25/18

CPC classification number: H01L23/49555 ,  H01L23/49562 ,  H01L23/49575 ,  H01L24/48 ,  H01L25/072 ,  H01L25/18 ,  H01L25/50 ,  H01L24/49 ,  H01L2224/48137 ,  H01L2224/48245 ,  H01L2224/4903

Abstract: A power semiconductor package includes: a die carrier having first and second opposite sides; and first and second power semiconductor dies each having first and second power electrodes on opposite sides. The second power electrodes face and are electrically coupled to the first side of the carrier. A molded body at least partially encapsulates the dies and has a first and second opposite sides and lateral sides connecting the first and second sides. First and second power contacts and first and second control contacts are arranged laterally next to each other. The first power electrode of the first die is electrically coupled to the first power contact by a first electrical connector. The first power electrode of the second die is electrically coupled to the second power contact by a second electrical connector. A width of each power contact is at least four times the width of each control contact.