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公开(公告)号：US20250057051A1
公开(公告)日：2025-02-13
申请号：US18448657
申请日：2023-08-11
Applicant: Infineon Technologies AG
Inventor： Michael KIRSCH , Patrick HANEKAMP , Werner ROBL , Klemens PRÜGL , Juergen ZIMMER , Christoph OSWALD
IPC: H10N50/85 , C23C14/16 , C23C14/34 , C23C28/02 , C25D3/56 , C25D5/02 , C25D7/12 , G01R33/02 , H10N50/01 , H10N59/00
Abstract: A layered structure includes a silicon-based substrate comprising a substrate surface; a titanium-copper seed layer arranged on the substrate surface, wherein the titanium-copper seed layer comprises a titanium layer and a copper layer, wherein the titanium layer is arranged on the substrate surface such that covalent bonds are formed between the titanium layer and silicon of the silicon-based substrate, and wherein the copper layer is arranged directly on the titanium layer, such that the titanium layer is arranged between the substrate surface and the copper layer; and a nickel-iron plating layer arranged directly on the copper layer of the titanium-copper seed layer such that the titanium-copper seed layer is arranged between the silicon-based substrate and the nickel-iron plating layer.
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公开(公告)号：US20230314534A1
公开(公告)日：2023-10-05
申请号：US18193091
申请日：2023-03-30
Applicant: Infineon Technologies AG
Inventor： Klemens PRÜGL , Miriam SCHWAN , Bernhard ENDRES
CPC classification number: G01R33/093 , G11C11/161 , H10N50/85 , H10N50/10 , H10N50/01 , H01F10/3268
Abstract: A device having a spin valve layer sequence, wherein the spin valve layer sequence includes a first magnetic layer having a variable direction of magnetization, a second magnetic layer having a fixed direction of magnetization, and a stabilization layer for stabilizing the fixed direction of magnetization of the second magnetic layer, wherein the stabilization layer includes a precious metal-free antiferromagnet.
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公开(公告)号：US20240230797A9
公开(公告)日：2024-07-11
申请号：US18487593
申请日：2023-10-16
Applicant: Infineon Technologies AG
Inventor： Dieter SUESS , Armin SATZ , Wolfgang RABERG , Klemens PRÜGL , Mathias KLAEUI
CPC classification number: G01R33/093 , G01R33/098 , H01F10/3268 , H10N50/01 , H10N50/10
Abstract: The present disclosure proposes a spin valve device comprising a layer stack. The layer stack comprises one or more layers forming a unidirectionally magnetized reference system, a vortex-magnetized free layer, a non-magnetic layer separating the reference system from the free layer, and one or more layers forming a bias structure being exchange-coupled to the free layer, the bias structure having a vortex-magnetization with closed flux of a predetermined rotation direction.
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公开(公告)号：US20240133982A1
公开(公告)日：2024-04-25
申请号：US18487593
申请日：2023-10-15
Applicant: Infineon Technologies AG
Inventor： Dieter SUESS , Armin SATZ , Wolfgang RABERG , Klemens PRÜGL , Mathias KLAEUI
CPC classification number: G01R33/093 , G01R33/098 , H01F10/3268 , H10N50/01 , H10N50/10
Abstract: The present disclosure proposes a spin valve device comprising a layer stack. The layer stack comprises one or more layers forming a unidirectionally magnetized reference system, a vortex-magnetized free layer, a non-magnetic layer separating the reference system from the free layer, and one or more layers forming a bias structure being exchange-coupled to the free layer, the bias structure having a vortex-magnetization with closed flux of a predetermined rotation direction.
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