公开(公告)号：US20230063856A1

公开(公告)日：2023-03-02

申请号：US17899541

申请日：2022-08-30

Applicant: Infineon Technologies AG

Inventor： Oliver Schilling ,  Roman Immel ,  Joachim Seifert ,  Altan Toprak ,  Frank Wagner ,  Ulrich Wilke ,  Lars Boewer ,  Paul Frank

IPC: H01L23/498 ,  H01L23/00

Abstract: A semiconductor device includes a semiconductor die including a first side and an opposing second side, a first metallization layer arranged on the first side, a Ni including layer arranged on the second side, wherein the Ni including layer further includes one or more of Si, Cr and Ti, and a SnSb layer arranged on the Ni comprising layer, wherein an amount of Sb in the SnSb layer is in the range of 2 wt % to 30 wt %.