公开(公告)号：US20200343094A1

公开(公告)日：2020-10-29

申请号：US16926162

申请日：2020-07-10

Applicant: Infineon Technologies AG

Inventor： Paul Frank ,  Gretchen Adema ,  Thomas Bertaud ,  Michael Ehmann ,  Eric Graetz ,  Kamil Karlovsky ,  Evelyn Napetschnig ,  Werner Robl ,  Tobias Schmidt ,  Joachim Seifert ,  Frank Wagner ,  Stefan Woehlert

IPC: H01L21/285 ,  H01L23/00 ,  H01L29/861

Abstract: An electronic device, an electronic module comprising the electronic device and methods for fabricating the same are disclosed. In one example, the electronic device includes a semiconductor substrate and a metal stack disposed on the semiconductor substrate, wherein the metal stack comprises a first layer, wherein the first layer comprises NiSi.

公开(公告)号：US10741402B2

公开(公告)日：2020-08-11

申请号：US15692495

申请日：2017-08-31

Applicant: Infineon Technologies AG

Inventor： Paul Frank ,  Gretchen Adema ,  Thomas Bertaud ,  Michael Ehmann ,  Eric Graetz ,  Kamil Karlovsky ,  Evelyn Napetschnig ,  Werner Robl ,  Tobias Schmidt ,  Joachim Seifert ,  Frank Wagner ,  Stefan Woehlert

IPC: H01L23/00 ,  H01L21/285 ,  H01L29/861

Abstract: An electronic device, an electronic module comprising the electronic device and methods for fabricating the same are disclosed. In one example, the electronic device includes a semiconductor substrate and a metal stack disposed on the semiconductor substrate, wherein the metal stack comprises a first layer, wherein the first layer comprises NiSi.

公开(公告)号：US11581194B2

公开(公告)日：2023-02-14

申请号：US17167620

申请日：2021-02-04

Applicant: Infineon Technologies AG

Inventor： Frederik Otto ,  Paul Frank

IPC: H01L21/324 ,  H01L23/31 ,  H01L23/29 ,  H01L21/56

Abstract: An electronic device comprises a semiconductor die, a layer stack disposed on the semiconductor die and comprising one or more functional layers, wherein the layer stack comprises a protection layer which is an outermost functional layer of the layer stack, and a sacrificial layer disposed on the protection layer, wherein the sacrificial layer comprises a material which decomposes or becomes volatile at a temperature between 100° and 400° C.

公开(公告)号：US11615963B2

公开(公告)日：2023-03-28

申请号：US16926162

申请日：2020-07-10

Applicant: Infineon Technologies AG

Inventor： Paul Frank ,  Gretchen Adema ,  Thomas Bertaud ,  Michael Ehmann ,  Eric Graetz ,  Kamil Karlovsky ,  Evelyn Napetschnig ,  Werner Robl ,  Tobias Schmidt ,  Joachim Seifert ,  Frank Wagner ,  Stefan Woehlert

IPC: H01L23/00 ,  H01L21/285 ,  H01L29/861

Abstract: An electronic device, an electronic module comprising the electronic device and methods for fabricating the same are disclosed. In one example, the electronic device includes a semiconductor substrate and a metal stack disposed on the semiconductor substrate, wherein the metal stack comprises a first layer, wherein the first layer comprises NiSi.

公开(公告)号：US20180082848A1

公开(公告)日：2018-03-22

申请号：US15692495

申请日：2017-08-31

Applicant: Infineon Technologies AG

Inventor： Paul Frank ,  Gretchen Adema ,  Thomas Bertaud ,  Michael Ehmann ,  Eric Graetz ,  Kamil Karlovsky ,  Evelyn Napetschnig ,  Werner Robl ,  Tobias Schmidt ,  Joachim Seifert ,  Frank Wagner ,  Stefan Woehlert

IPC: H01L21/285 ,  H01L23/00 ,  H01L29/861

Abstract: An electronic device, an electronic module comprising the electronic device and methods for fabricating the same are disclosed. In one example, the electronic device includes a semiconductor substrate and a metal stack disposed on the semiconductor substrate, wherein the metal stack comprises a first layer, wherein the first layer comprises NiSi.

公开(公告)号：US20230063856A1

公开(公告)日：2023-03-02

申请号：US17899541

申请日：2022-08-30

Applicant: Infineon Technologies AG

Inventor： Oliver Schilling ,  Roman Immel ,  Joachim Seifert ,  Altan Toprak ,  Frank Wagner ,  Ulrich Wilke ,  Lars Boewer ,  Paul Frank

IPC: H01L23/498 ,  H01L23/00

Abstract: A semiconductor device includes a semiconductor die including a first side and an opposing second side, a first metallization layer arranged on the first side, a Ni including layer arranged on the second side, wherein the Ni including layer further includes one or more of Si, Cr and Ti, and a SnSb layer arranged on the Ni comprising layer, wherein an amount of Sb in the SnSb layer is in the range of 2 wt % to 30 wt %.