公开(公告)号：US20210309513A1

公开(公告)日：2021-10-07

申请号：US17188082

申请日：2021-03-01

Applicant: Infineon Technologies AG

Inventor： Andre BROCKMEIER ,  Stephan HELBIG ,  Adolf KOLLER

IPC: B81C1/00 ,  G02B26/08 ,  G02B26/10

Abstract: A method includes producing a semiconductor wafer. The semiconductor wafer includes a plurality of microelectromechanical system (MEMS) semiconductor chips, wherein the MEMS semiconductor chips have MEMS structures arranged at a first main surface of the semiconductor wafer, a first semiconductor material layer arranged at the first main surface, and a second semiconductor material layer arranged under the first semiconductor material layer, wherein a doping of the first semiconductor material layer is greater than a doping of the second semiconductor material layer. The method further includes removing the first semiconductor material layer in a region between adjacent MEMS semiconductor chips. The method further includes applying a stealth dicing process from the first main surface of the semiconductor wafer and between the adjacent MEMS semiconductor chips.