公开(公告)号：US20200006424A1

公开(公告)日：2020-01-02

申请号：US16022564

申请日：2018-06-28

Applicant: Intel Corporation

Inventor： Noriyuki Sato ,  Angeline Smith ,  Tanay Gosavi ,  Sasikanth Manipatruni ,  Kaan Oguz ,  Kevin O'Brien ,  Tofizur Rahman ,  Gary Allen ,  Atm G. Sarwar ,  Ian Young ,  Hui Jae Yoo ,  Christopher Weigand ,  Benjamin Buford

IPC: H01L27/22 ,  G11C11/16 ,  H01F10/32 ,  H01L43/02 ,  H01L43/12 ,  H01F41/34

Abstract: A spin orbit torque (SOT) memory device includes a magnetic tunnel junction (MTJ) device with one end coupled with a first electrode and an opposite end coupled with a second electrode including a spin orbit torque material. In an embodiment, a second electrode is coupled with the free magnet and coupled between a pair of interconnect line segments. The second electrode and the pair of interconnect line segments include a spin orbit torque material. The second electrode has a conductive path cross-section that is smaller than a cross section of the conductive path in at least one of the interconnect line segments.