公开(公告)号：US20200235249A1

公开(公告)日：2020-07-23

申请号：US16650321

申请日：2017-12-27

Applicant: Intel Corporation

Inventor： Ayan KAR ,  Kinyip PHOA ,  Justin S. SANDFORD ,  Junjun WAN ,  Akm A. AHSAN ,  Leif R. PAULSON ,  Bernhard SELL

IPC: H01L29/94 ,  H01L29/66 ,  H01L29/8605

Abstract: This disclosure illustrates a FinFET based dual electronic component that may be used as a capacitor or a resistor and methods to manufacture said component. A FinFET based dual electronic component comprises a fin, source and drain regions, a gate dielectric, and a gate. The fin is heavily doped such that semiconductor material of the fin becomes degenerate.