Performance of Additional Refresh Operations During Self-Refresh Mode

    公开(公告)号:US20170169880A1

    公开(公告)日:2017-06-15

    申请号:US15184944

    申请日:2016-06-16

    CPC classification number: G11C11/40615 G11C11/4074 G11C2211/4067

    Abstract: Embodiments are generally directed to performance of additional refresh operations during self-refresh mode. An embodiment of a memory device includes one or more memory banks, a mode register set, the mode register set including a first set of mode register bits, and a control logic to provide control operations for the memory device, the operations including refresh operations for the one or more memory banks in a refresh credit mode. The control logic is to perform one or more extra refresh cycles in response to receipt of a self-refresh command, the self-refresh command to provide current refresh status information, and is to store information in the first set of mode register bits regarding a modified refresh status after the performance of the one or more extra refresh cycles.

    Performance of Additional Refresh Operations During Self-Refresh Mode

    公开(公告)号:US20180047439A1

    公开(公告)日:2018-02-15

    申请号:US15665143

    申请日:2017-07-31

    Abstract: Embodiments are generally directed to performance of additional refresh operations during self-refresh mode. An embodiment of a memory device includes one or more memory banks, a mode register set, the mode register set including a first set of mode register bits, and a control logic to provide control operations for the memory device, the operations including refresh operations for the one or more memory banks in a refresh credit mode. The control logic is to perform one or more extra refresh cycles in response to receipt of a self-refresh command, the self-refresh command to provide current refresh status information, and is to store information in the first set of mode register bits regarding a modified refresh status after the performance of the one or more extra refresh cycles.

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