公开(公告)号：US10944541B2

公开(公告)日：2021-03-09

申请号：US16556864

申请日：2019-08-30

Applicant: Intel Corporation

Inventor： Zdravko Boos

IPC: H03D1/04 ,  H04L7/033 ,  H04B1/10 ,  H04B1/38

Abstract: Systems, methods, and circuitries are provided for resonator-based local oscillator signal generation for receiving self-interference signals. An interference cancellation system for a transceiver includes a resonator configured to generate a high-frequency signal and a local oscillator circuitry. The local oscillator circuitry includes a digital-to time converter configured to receive the high-frequency signal and, in response, generate a clock signal for receiving an interfering signal having an interference frequency. Digital cancellation circuitry is configured to adapt operation of the transceiver based, at least in part, on the received interfering signal.

公开(公告)号：US20200227470A1

公开(公告)日：2020-07-16

申请号：US16249577

申请日：2019-01-16

Applicant: Intel Corporation

Inventor： Han Wui Then ,  Paul B. Fischer ,  Zdravko Boos ,  Marko Radosavljevic ,  Sansaptak Dasgupta

IPC: H01L27/20 ,  H01L23/66 ,  H01L29/20 ,  H01P1/205

Abstract: Disclosed herein are IC structures, packages, and devices that include III-N transistors integrated on the same substrate or die as resonators of RF filters. An example IC structure includes a support structure (e.g., a substrate), a resonator, provided over a first portion of the support structure, and an III-N transistor, provided over a second portion of the support structure. The IC structure includes a piezoelectric material so that first and second electrodes of the resonator enclose a first portion of the piezoelectric material, while a second portion of the piezoelectric material is enclosed between the channel material of the III-N transistor and the support structure. In this manner, one or more resonators of an RF filter may be monolithically integrated with one or more III-N transistors. Such integration may reduce costs and improve performance by reducing RF losses incurred when power is routed off chip.

公开(公告)号：US11502124B2

公开(公告)日：2022-11-15

申请号：US16249577

申请日：2019-01-16

Applicant: Intel Corporation

Inventor： Han Wui Then ,  Paul B. Fischer ,  Zdravko Boos ,  Marko Radosavljevic ,  Sansaptak Dasgupta

IPC: H01L27/20 ,  H01L23/66 ,  H01P1/205 ,  H01L29/20

Abstract: Disclosed herein are IC structures, packages, and devices that include III-N transistors integrated on the same substrate or die as resonators of RF filters. An example IC structure includes a support structure (e.g., a substrate), a resonator, provided over a first portion of the support structure, and an III-N transistor, provided over a second portion of the support structure. The IC structure includes a piezoelectric material so that first and second electrodes of the resonator enclose a first portion of the piezoelectric material, while a second portion of the piezoelectric material is enclosed between the channel material of the III-N transistor and the support structure. In this manner, one or more resonators of an RF filter may be monolithically integrated with one or more III-N transistors. Such integration may reduce costs and improve performance by reducing RF losses incurred when power is routed off chip.

公开(公告)号：US20200227469A1

公开(公告)日：2020-07-16

申请号：US16249493

申请日：2019-01-16

Applicant: Intel Corporation

Inventor： Han Wui Then ,  Zdravko Boos ,  Sansaptak Dasgupta ,  Marko Radosavljevic ,  Paul B. Fischer

IPC: H01L27/20 ,  H01L29/20 ,  H01L29/78 ,  H01L41/18 ,  H01L25/18 ,  H03F3/195 ,  H03B5/36

Abstract: Disclosed herein are IC structures, packages, and devices that include III-N transistors integrated on the same substrate or die as resonators of RF filters. An example IC structure includes a support structure (e.g., a substrate), a resonator, provided over a first portion of the support structure, and an III-N transistor, provided over a second portion of the support structure. The IC structure includes a piezoelectric material so that first and second electrodes of the resonator enclose a first portion of the piezoelectric material, while a second portion of the piezoelectric material is enclosed between the channel material of the III-N transistor and the support structure. In this manner, one or more resonators of an RF filter may be monolithically integrated with one or more III-N transistors. Such integration may reduce costs and improve performance by reducing RF losses incurred when power is routed off chip.

公开(公告)号：US20190394016A1

公开(公告)日：2019-12-26

申请号：US16556864

申请日：2019-08-30

Applicant: Intel Corporation

Inventor： Zdravko Boos

IPC: H04L7/033 ,  H04B1/10

Abstract: Systems, methods, and circuitries are provided for resonator-based local oscillator signal generation for receiving self-interference signals. An interference cancellation system for a transceiver includes a resonator configured to generate a high-frequency signal and a local oscillator circuitry. The local oscillator circuitry includes a digital-to time converter configured to receive the high-frequency signal and, in response, generate a clock signal for receiving an interfering signal having an interference frequency. Digital cancellation circuitry is configured to adapt operation of the transceiver based, at least in part, on the received interfering signal.