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Patent Agency Ranking
公开(公告)号：US20130247372A1
公开(公告)日：2013-09-26
申请号：US13896911
申请日：2013-05-17
Applicant: Invensas Corporation
Inventor： Tomoo Iijima , Yoshitaka Fukuoka
IPC: H05K3/46
CPC classification number: H05K3/4007 , H01L23/498 , H01L23/49833 , H01L24/19 , H01L2924/14 , H05K1/0393 , H05K1/16 , H05K1/162 , H05K1/165 , H05K1/167 , H05K1/182 , H05K1/187 , H05K1/189 , H05K3/06 , H05K3/205 , H05K3/46 , H05K3/4614 , H05K3/4635 , H05K3/4652 , H05K2201/0367 , H05K2203/0384 , Y10T29/49155 , H01L2924/00
Abstract: To provide a multilayer wiring board mainly used for an electronic device, in which a bump passing through an interlayer insulating film allows for interlayer connection between plural wiring films insulated from one another with plural interlayer insulating layers. In the multilayer wiring board, a circuit element such as an electronic part, a semiconductor chip, or a passive element is accommodated in the interlayer insulating films so as to connect its terminal with the corresponding wiring film. In particular, the semiconductor chip is polished to a thickness of 50 μm or smaller, and the multilayer wiring board itself for the electronic device has the flexibility.
Abstract translation: 为了提供主要用于电子器件的多层布线板，其中通过层间绝缘膜的凸块允许在多个层间绝缘层彼此绝缘的多个布线膜之间的层间连接。 在多层布线基板中，在层间绝缘膜中容纳诸如电子部件，半导体芯片或无源元件的电路元件，以将其端子与相应的布线膜连接。 特别地，半导体芯片被抛光到50μm以下的厚度，并且用于电子器件的多层布线板本身具有柔性。
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公开(公告)号：US09521755B2
公开(公告)日：2016-12-13
申请号：US14271959
申请日：2014-05-07
Applicant: Invensas Corporation
Inventor： Tomoo Iijima , Yoshitaka Fukuoka
IPC: H05K1/14 , H05K1/00 , H05K1/18 , H01L23/498 , H05K1/16 , H01L23/00 , H05K1/03 , H05K3/06 , H05K3/20 , H05K3/40 , H05K3/46
CPC classification number: H05K3/4007 , H01L23/498 , H01L23/49833 , H01L24/19 , H01L2924/14 , H05K1/0393 , H05K1/16 , H05K1/162 , H05K1/165 , H05K1/167 , H05K1/182 , H05K1/187 , H05K1/189 , H05K3/06 , H05K3/205 , H05K3/46 , H05K3/4614 , H05K3/4635 , H05K3/4652 , H05K2201/0367 , H05K2203/0384 , Y10T29/49155 , H01L2924/00
Abstract: An electronic assembly is disclosed that includes a flexible insulating film, a semiconductor component that has a thickness of less than 50 micrometers, a conductive interconnect extending through the flexible insulating film, a second patterned metal wiring film adjacent, and a third patterned metal wiring film. The second patterned metal wiring film is electrically coupled with the third patterned metal wiring film through the conductive interconnect. The semiconductor component is coupled to the first patterned metal wiring film and at least one of the second patterned metal wiring film or the third patterned metal wiring film.
Abstract translation: 公开了一种电子组件，其包括柔性绝缘膜，厚度小于50微米的半导体部件，延伸穿过柔性绝缘膜的导电互连，邻近的第二图案化金属布线膜和第三图案化金属布线膜 。 第二图案化金属布线膜通过导电互连与第三图案化金属布线膜电耦合。 半导体元件耦合到第一图案化金属布线膜和第二图案化金属布线膜或第三图案化金属布线膜中的至少一个。
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公开(公告)号：US20140240934A1
公开(公告)日：2014-08-28
申请号：US14271959
申请日：2014-05-07
Applicant: Invensas Corporation
Inventor： Tomoo Iijima , Yoshitaka Fukuoka
IPC: H05K1/18
CPC classification number: H05K3/4007 , H01L23/498 , H01L23/49833 , H01L24/19 , H01L2924/14 , H05K1/0393 , H05K1/16 , H05K1/162 , H05K1/165 , H05K1/167 , H05K1/182 , H05K1/187 , H05K1/189 , H05K3/06 , H05K3/205 , H05K3/46 , H05K3/4614 , H05K3/4635 , H05K3/4652 , H05K2201/0367 , H05K2203/0384 , Y10T29/49155 , H01L2924/00
Abstract: An electronic assembly is disclosed that includes a flexible insulating film, a semiconductor component that has a thickness of less than 50 micrometers, a conductive interconnect extending through the flexible insulating film, a second patterned metal wiring film adjacent, and a third patterned metal wiring film. The second patterned metal wiring film is electrically coupled with the third patterned metal wiring film through the conductive interconnect. The semiconductor component is coupled to the first patterned metal wiring film and at least one of the second patterned metal wiring film or the third patterned metal wiring film.
Abstract translation: 公开了一种电子组件，其包括柔性绝缘膜，厚度小于50微米的半导体部件，延伸穿过柔性绝缘膜的导电互连，邻近的第二图案化金属布线膜和第三图案化金属布线膜 。 第二图案化金属布线膜通过导电互连与第三图案化金属布线膜电耦合。 半导体元件耦合到第一图案化金属布线膜和第二图案化金属布线膜或第三图案化金属布线膜中的至少一个。
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公开(公告)号：US10104785B2
公开(公告)日：2018-10-16
申请号：US15374233
申请日：2016-12-09
Applicant: Invensas Corporation
Inventor： Tomoo Iijima , Yoshitaka Fukuoka
Abstract: An electronic assembly is disclosed that includes a flexible insulating film, a semiconductor component that has a thickness of less than 50 micrometers, a conductive interconnect extending through the flexible insulating film, a second patterned metal wiring film adjacent, and a third patterned metal wiring film. The second patterned metal wiring film is electrically coupled with the third patterned metal wiring film through the conductive interconnect. The semiconductor component is coupled to the first patterned metal wiring film and at least one of the second patterned metal wiring film or the third patterned metal wiring film.
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公开(公告)号：US20170171986A1
公开(公告)日：2017-06-15
申请号：US15374233
申请日：2016-12-09
Applicant: Invensas Corporation
Inventor： Tomoo Iijima , Yoshitaka Fukuoka
CPC classification number: H05K3/4007 , H01L23/498 , H01L23/49833 , H01L24/19 , H01L2924/14 , H05K1/0393 , H05K1/16 , H05K1/162 , H05K1/165 , H05K1/167 , H05K1/182 , H05K1/187 , H05K1/189 , H05K3/06 , H05K3/205 , H05K3/46 , H05K3/4614 , H05K3/4635 , H05K3/4652 , H05K2201/0367 , H05K2203/0384 , Y10T29/49155 , H01L2924/00
Abstract: An electronic assembly is disclosed that includes a flexible insulating film, a semiconductor component that has a thickness of less than 50 micrometers, a conductive interconnect extending through the flexible insulating film, a second patterned metal wiring film adjacent, and a third patterned metal wiring film. The second patterned metal wiring film is electrically coupled with the third patterned metal wiring film through the conductive interconnect. The semiconductor component is coupled to the first patterned metal wiring film and at least one of the second patterned metal wiring film or the third patterned metal wiring film.
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