公开(公告)号：US10957519B2

公开(公告)日：2021-03-23

申请号：US16063284

申请日：2016-12-20

Applicant: IonQuest LLC

Inventor： Roman Chistyakov ,  Bassam Hanna Abraham

IPC: H01J37/32 ,  H01J37/34 ,  C23C14/34 ,  C23C14/35 ,  C23C14/06 ,  C23C16/509

Abstract: A magnetically enhanced HDP-CVD plasma source includes a hollow cathode target and an anode. The anode and cathode form a gap. A cathode target magnet assembly forms magnetic field lines that are substantially perpendicular to a cathode target surface. The gap magnet assembly forms a cusp magnetic field in the gap that is coupled with the cathode target magnetic field. The magnetic field lines cross a pole piece electrode positioned in the gap. This pole piece is isolated from ground and can be connected with a voltage power supply. The pole piece can have a negative, positive, or floating electric potential. The plasma source can be configured to generate volume discharge. The gap size prohibits generation of plasma discharge in the gap. By controlling the duration, value and a sign of the electric potential on the pole piece, the plasma ionization can be controlled. The magnetically enhanced HDP-CVD source can also be used for chemically enhanced ionized physical vapor deposition (CE-IPVD). Gas flows through the gap between hollow cathode and anode. The cathode target is inductively grounded, and the substrate is periodically inductively grounded.

公开(公告)号：US20170175248A1

公开(公告)日：2017-06-22

申请号：US15261197

申请日：2016-09-09

Applicant: IonQuest LLC

Inventor： Bassam Hanna Abraham ,  Roman Chistyakov

IPC: C23C14/06 ,  C23C14/34 ,  C23C14/35 ,  H01J37/34

CPC classification number: C23C14/354 ,  C23C14/0057 ,  C23C14/0605 ,  C23C14/14 ,  C23C14/345 ,  C23C14/3485 ,  C23C14/35 ,  H01J37/321 ,  H01J37/32825 ,  H01J37/3405 ,  H01J37/3417 ,  H01J37/3426 ,  H01J37/3435 ,  H01J37/345 ,  H01J37/3452 ,  H01J37/3455 ,  H01J37/3464 ,  H01J37/3467 ,  H01L21/2855 ,  H01L21/76843 ,  H01L21/76871 ,  H01L21/76879 ,  H01L21/76882 ,  H01L23/5226 ,  H01L23/53238

Abstract: A magnetically enhanced low temperature high density plasma chemical vapor deposition (LT-HDP-CVD) source has a hollow cathode target and an anode, which form a gap. A cathode target magnet assembly forms magnetic field lines substantially perpendicular to the cathode surface. A gap magnet assembly forms a magnetic field in the gap that is coupled with the cathode target magnetic field. The magnetic field lines cross the pole piece electrode positioned in the gap. The pole piece is isolated from ground and can be connected to a voltage power supply. The pole piece can have negative, positive, floating, or RF electrical potentials. By controlling the duration, value, and sign of the electric potential on the pole piece, plasma ionization can be controlled. Feed gas flows through the gap between the hollow cathode and anode. The cathode can be connected to a pulse power or RF power supply, or cathode can be connected to both power supplies. The cathode target and substrate can be inductively grounded.

公开(公告)号：US20180374688A1

公开(公告)日：2018-12-27

申请号：US16063284

申请日：2016-12-20

Applicant: IonQuest LLC

Inventor： Roman Chistyakov ,  Bassam Hanna Abraham

IPC: H01J37/32 ,  H01J37/34 ,  C23C14/35 ,  C23C14/06 ,  C23C14/34

Abstract: A magnetically enhanced HDP-CVD plasma source includes a hollow cathode target and an anode. The anode and cathode form a gap. A cathode target magnet assembly forms magnetic field lines that are substantially perpendicular to a cathode target surface. The gap magnet assembly forms a cusp magnetic field in the gap that is coupled with the cathode target magnetic field. The magnetic field lines cross a pole piece electrode positioned in the gap. This pole piece is isolated from ground and can be connected with a voltage power supply. The pole piece can have a negative, positive, or floating electric potential. The plasma source can be configured to generate volume discharge. The gap size prohibits generation of plasma discharge in the gap. By controlling the duration, value and a sign of the electric potential on the pole piece, the plasma ionization can be controlled. The magnetically enhanced HDP-CVD source can also be used for chemically enhanced ionized physical vapor deposition (CE-IPVD). Gas flows through the gap between hollow cathode and anode. The cathode target is inductively grounded, and the substrate is periodically inductively grounded.

公开(公告)号：US20180195164A1

公开(公告)日：2018-07-12

申请号：US15917046

申请日：2018-03-09

Applicant: IonQuest LLC

Inventor： Roman Chistyakov ,  Bassam Hanna Abraham

IPC: C23C14/35 ,  H01J37/34 ,  C23C14/00 ,  C23C14/14 ,  C23C14/06 ,  C23C14/34

CPC classification number: C23C14/354 ,  C23C14/0057 ,  C23C14/0605 ,  C23C14/14 ,  C23C14/345 ,  C23C14/3485 ,  C23C14/35 ,  H01J37/321 ,  H01J37/32825 ,  H01J37/3405 ,  H01J37/3417 ,  H01J37/3426 ,  H01J37/3435 ,  H01J37/345 ,  H01J37/3452 ,  H01J37/3455 ,  H01J37/3464 ,  H01J37/3467 ,  H01L21/2855 ,  H01L21/76843 ,  H01L21/76871 ,  H01L21/76879 ,  H01L21/76882 ,  H01L23/5226 ,  H01L23/53238

Abstract: A magnetically enhanced HDP-CVD plasma source includes a hollow cathode target and an anode. The anode and cathode form a gap. A cathode target magnet assembly forms magnetic field lines that are substantially perpendicular to a cathode target surface. The gap magnet assembly forms a cusp magnetic field in the gap that is coupled with the cathode target magnetic field. The magnetic field lines cross a pole piece electrode positioned in the gap. This pole piece is isolated from ground and can be connected with a voltage power supply. The pole piece can have a negative, positive, or floating electric potential. The plasma source can be configured to generate volume discharge. The gap size prohibits generation of plasma discharge in the gap. By controlling the duration, value and a sign of the electric potential on the pole piece, the plasma ionization can be controlled. The magnetically enhanced HDP-CVD source can also be used for chemically enhanced ionized physical vapor deposition (CE-IPVD). Gas flows through the gap between hollow cathode and anode. The cathode target is inductively grounded, and the substrate is periodically inductively grounded.

公开(公告)号：US09951414B2

公开(公告)日：2018-04-24

申请号：US15261119

申请日：2016-09-09

Applicant: IonQuest LLC

Inventor： Roman Chistyakov ,  Bassam Hanna Abraham

IPC: C23C14/14 ,  C23C14/35 ,  C23C14/00 ,  C23C14/34 ,  C23C14/06 ,  H01J37/34

CPC classification number: C23C14/354 ,  C23C14/0057 ,  C23C14/0605 ,  C23C14/14 ,  C23C14/345 ,  C23C14/3485 ,  C23C14/35 ,  H01J37/321 ,  H01J37/32825 ,  H01J37/3405 ,  H01J37/3417 ,  H01J37/3426 ,  H01J37/3435 ,  H01J37/345 ,  H01J37/3452 ,  H01J37/3455 ,  H01J37/3464 ,  H01J37/3467 ,  H01L21/2855 ,  H01L21/76843 ,  H01L21/76871 ,  H01L21/76879 ,  H01L21/76882 ,  H01L23/5226 ,  H01L23/53238

Abstract: A magnetically enhanced HDP-CVD plasma source includes a hollow cathode target and an anode. The anode and cathode form a gap. A cathode target magnet assembly forms magnetic field lines that are substantially perpendicular to a cathode target surface. The gap magnet assembly forms a cusp magnetic field in the gap that is coupled with the cathode target magnetic field. The magnetic field lines cross a pole piece electrode positioned in the gap. This pole piece is isolated from ground and can be connected with a voltage power supply. The pole piece can have a negative, positive, or floating electric potential. The plasma source can be configured to generate volume discharge. The gap size prohibits generation of plasma discharge in the gap. By controlling the duration, value and a sign of the electric potential on the pole piece, the plasma ionization can be controlled. The magnetically enhanced HDP-CVD source can also be used for chemically enhanced ionized physical vapor deposition (CE-IPVD). Gas flows through the gap between hollow cathode and anode. The cathode target is inductively grounded, and the substrate is periodically inductively grounded.

公开(公告)号：US20170175253A1

公开(公告)日：2017-06-22

申请号：US15261119

申请日：2016-09-09

Applicant: IonQuest LLC

Inventor： Roman Chistyakov ,  Bassam Hanna Abraham

IPC: C23C14/35 ,  H01J37/34 ,  C23C14/14 ,  C23C14/06 ,  C23C14/00 ,  C23C14/34

CPC classification number: C23C14/354 ,  C23C14/0057 ,  C23C14/0605 ,  C23C14/14 ,  C23C14/345 ,  C23C14/3485 ,  C23C14/35 ,  H01J37/321 ,  H01J37/32825 ,  H01J37/3405 ,  H01J37/3417 ,  H01J37/3426 ,  H01J37/3435 ,  H01J37/345 ,  H01J37/3452 ,  H01J37/3455 ,  H01J37/3464 ,  H01J37/3467 ,  H01L21/2855 ,  H01L21/76843 ,  H01L21/76871 ,  H01L21/76879 ,  H01L21/76882 ,  H01L23/5226 ,  H01L23/53238

Abstract: A magnetically enhanced HDP-CVD plasma source includes a hollow cathode target and an anode. The anode and cathode form a gap. A cathode target magnet assembly forms magnetic field lines that are substantially perpendicular to a cathode target surface. The gap magnet assembly forms a cusp magnetic field in the gap that is coupled with the cathode target magnetic field. The magnetic field lines cross a pole piece electrode positioned in the gap. This pole piece is isolated from ground and can be connected with a voltage power supply. The pole piece can have a negative, positive, or floating electric potential. The plasma source can be configured to generate volume discharge. The gap size prohibits generation of plasma discharge in the gap. By controlling the duration, value and a sign of the electric potential on the pole piece, the plasma ionization can be controlled. The magnetically enhanced HDP-CVD source can also be used for chemically enhanced ionized physical vapor deposition (CE-IPVD). Gas flows through the gap between hollow cathode and anode. The cathode target is inductively grounded, and the substrate is periodically inductively grounded.

公开(公告)号：US10480063B2

公开(公告)日：2019-11-19

申请号：US15260841

申请日：2016-09-09

Applicant: IonQuest LLC

Inventor： Roman Chistyakov ,  Bassam Hanna Abraham

IPC: C23C14/04 ,  C23C14/35 ,  C23C14/34 ,  H01J37/34 ,  H01L21/285 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01J37/32 ,  C23C14/00 ,  C23C14/06 ,  C23C14/14

Abstract: An ionized physical vapor deposition (I-PVD) source includes an electrically and magnetically enhanced radio frequency (RF) diode, which has magnetic field lines directed substantially perpendicular to a cathode that terminate on an electrode positioned between an anode around the cathode. The anode forms a gap and the electrode is positioned behind the gap. An RF power supply connected to the cathode generates RF discharge. The cathode is inductively grounded to prevent forming a constant voltage bias during RF discharge. The electrons drift between the cathode and the gap, thereby producing ionization and forming high density plasma. The electrons drift and energy are controlled by applying different voltage potentials to the electrode. The I-PVD source is positioned in a vacuum chamber to form an I-PVD apparatus that generates ions from sputtered target material atoms and deposition. During sputtering, the substrate is biased. The I-PVD source performs chemically enhanced ionized physical vapor deposition (CE-IPVD).

公开(公告)号：US10227692B2

公开(公告)日：2019-03-12

申请号：US15917046

申请日：2018-03-09

Applicant: IonQuest LLC

Inventor： Roman Chistyakov ,  Bassam Hanna Abraham

IPC: C23C14/35 ,  H01J37/34 ,  C23C14/34 ,  H01L21/285 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01J37/32 ,  C23C14/00 ,  C23C14/06 ,  C23C14/14

Abstract: A magnetically enhanced HDP-CVD plasma source includes a hollow cathode target and an anode. The anode and cathode form a gap. A cathode target magnet assembly forms magnetic field lines that are substantially perpendicular to a cathode target surface. The gap magnet assembly forms a cusp magnetic field in the gap that is coupled with the cathode target magnetic field. The magnetic field lines cross a pole piece electrode positioned in the gap. This pole piece is isolated from ground and can be connected with a voltage power supply. The pole piece can have a negative, positive, or floating electric potential. The plasma source can be configured to generate volume discharge. The gap size prohibits generation of plasma discharge in the gap. By controlling the duration, value and a sign of the electric potential on the pole piece, the plasma ionization can be controlled. The magnetically enhanced HDP-CVD source can also be used for chemically enhanced ionized physical vapor deposition (CE-IPVD). Gas flows through the gap between hollow cathode and anode. The cathode target is inductively grounded, and the substrate is periodically inductively grounded.

公开(公告)号：US20170178912A1

公开(公告)日：2017-06-22

申请号：US15260841

申请日：2016-09-09

Applicant: IonQuest LLC

Inventor： Roman Chistyakov ,  Bassam Hanna Abraham

IPC: H01L21/285 ,  H01L23/532 ,  C23C14/35 ,  H01J37/34 ,  C23C14/34 ,  H01L21/768 ,  H01L23/522

Abstract: An ionized physical vapor deposition (I-PVD) source includes an electrically and magnetically enhanced radio frequency (RF) diode, which has magnetic field lines directed substantially perpendicular to a cathode that terminate on an electrode positioned between an anode around the cathode. The anode forms a gap and the electrode is positioned behind the gap. An RF power supply connected to the cathode generates RF discharge. The cathode is inductively grounded to prevent forming a constant voltage bias during RF discharge. The electrons drift between the cathode and the gap, thereby producing ionization and forming high density plasma. The electrons drift and energy are controlled by applying different voltage potentials to the electrode. The I-PVD source is positioned in a vacuum chamber to form an I-PVD apparatus that generates ions from sputtered target material atoms and deposition. During sputtering, the substrate is biased. The I-PVD source performs chemically enhanced ionized physical vapor deposition (CE-IPVD).

公开(公告)号：US11482404B2

公开(公告)日：2022-10-25

申请号：US16063283

申请日：2016-12-20

Applicant: IonQuest LLC

Inventor： Bassam Hanna Abraham ,  Roman Chistyakov

IPC: H01J37/34 ,  H01J37/32 ,  C23C14/35 ,  C23C14/34 ,  C23C14/06

Abstract: An electrically and magnetically enhanced ionized physical vapor deposition (I-PVD) magnetron apparatus and method is provided for sputtering material from a cathode target on a substrate, and in particular, for sputtering ceramic and diamond-like coatings. The electrically and magnetically enhanced magnetron sputtering source has unbalanced magnetic fields that couple the cathode target and additional electrode together. The additional electrode is electrically isolated from ground and connected to a power supply that can generate positive, negative, or bipolar high frequency voltages, and is preferably a radio frequency (RF) power supply. RF discharge near the additional electrode increases plasma density and a degree of ionization of sputtered material atoms.