公开(公告)号：US20240404911A1

公开(公告)日：2024-12-05

申请号：US18670747

申请日：2024-05-22

Applicant: JCET STATS ChipPAC Korea Limited

Inventor： SeungHyun LEE ,  HeeSoo LEE ,  YongMoo SHIN

IPC: H01L23/367 ,  H01L23/00 ,  H01L25/065

Abstract: A semiconductor package is provided. The semiconductor package includes a primary semiconductor die with a top surface, wherein the top surface comprising a first region and a second region besides the first region; an auxiliary semiconductor die attached on the first region of the top surface of the primary semiconductor die; a primary heat spreader assembly attached on the second region of the top surface of the primary semiconductor die; and an auxiliary heat spreader assembly attached on a top surface of the auxiliary semiconductor die, wherein the primary heat spreader assembly is thermally isolated from the auxiliary heat spreader assembly.

公开(公告)号：US20240332114A1

公开(公告)日：2024-10-03

申请号：US18597878

申请日：2024-03-06

Applicant: JCET STATS ChipPAC Korea Limited

Inventor： SeungHyun LEE ,  HeeSoo LEE ,  YongMoo SHIN

IPC: H01L23/367 ,  H01L23/00 ,  H01L23/42 ,  H01L25/065

CPC classification number: H01L23/367 ,  H01L23/42 ,  H01L24/08 ,  H01L24/27 ,  H01L24/32 ,  H01L24/83 ,  H01L25/0657 ,  H01L2224/08145 ,  H01L2224/27 ,  H01L2224/32245 ,  H01L2224/83801 ,  H01L2225/06568

Abstract: A semiconductor device is provided. The semiconductor device includes a primary semiconductor die with a top surface, wherein the top surface comprising a first region and a second region besides the first region; an auxiliary semiconductor die attached onto the first region of the top surface of the primary semiconductor die; a thermally conductive laminated structure formed on the primary semiconductor die and the auxiliary semiconductor die, wherein the thermally conductive laminated structure at least partially covers the second region of the top surface of the primary semiconductor die, and at least partially covers a top surface of the auxiliary semiconductor die; and a heat spreader thermally coupled to the primary semiconductor die and the auxiliary semiconductor die through at least the thermally conductive laminated structure.