公开(公告)号：US20240120268A1

公开(公告)日：2024-04-11

申请号：US18475255

申请日：2023-09-27

Applicant: JCET STATS ChipPAC Korea Limited

Inventor： SeungHyun LEE ,  HunTaek LEE ,  KyoungHee PARK ,  SeongHwan PARK ,  YoungHoon JEON ,  HeeSoo LEE

IPC: H01L23/498 ,  H01L21/48 ,  H01L21/56 ,  H01L23/552 ,  H01L25/16

CPC classification number: H01L23/49838 ,  H01L21/4846 ,  H01L21/56 ,  H01L23/552 ,  H01L25/162

Abstract: A method for forming a shielding layer on a semiconductor device is disclosed. The semiconductor device comprises a bond pad formed on a front side of a substrate and extends to a first lateral surface of the substrate. The method comprises: etching a portion of the bond pad adjacent to the first lateral surface, to form a gap between the bond pad and the first lateral surface; attaching a filler onto the bond pad to fill the gap; and applying a shielding layer to a back side of the substrate.