公开(公告)号：US3632434A

公开(公告)日：1972-01-04

申请号：US3632434D

申请日：1969-01-21

Applicant: JERALD L HUTSON

Inventor： HUTSON JERALD L

IPC: H01L21/316 ,  H01L23/31 ,  B44D1/18 ,  H01L1/10

CPC classification number: H01L21/316 ,  H01L23/3157 ,  H01L2924/0002 ,  Y10S148/118 ,  H01L2924/00

Abstract: A process for glass passivating silicon semiconductor junctions comprises the steps of coating a slice of semiconductor material containing exposed rectifying junctions in a liquid mixture of powdered glass and an organic component, spinning the slice to remove excess mixture, but leave remaining on the slice a thin uniform film of the mixture, heating the slice in an oxygen atmosphere to form a very thin silicon dioxide layer on the surface of the slice while burning off the organic component to leave the glass in a highly compacted, dry powder form tightly adhering to the slice, and again heating the slice in a dry, substantially oxygen-free atmosphere at a temperature sufficient to fuse the glass powder together and to the slice.

Abstract translation: 用于玻璃钝化硅半导体结的方法包括以下步骤：在玻璃粉末和有机组分的液体混合物中涂覆含有暴露的精馏结的半导体材料片，旋转切片以除去过量的混合物，但留在切片上薄 混合物的均匀膜，在氧气气氛中加热切片以在切片的表面上形成非常薄的二氧化硅层，同时燃烧有机组分，使玻璃留下紧密粘附在切片上的高度紧密，干燥的粉末形式 ，并再次在干燥的，基本上无氧的气氛中加热切片，其温度足以将玻璃粉末熔合到切片上。