Optoelectronic device packaging assemblies and methods of making the same
    1.
    发明授权
    Optoelectronic device packaging assemblies and methods of making the same 失效
    光电器件封装组件及其制造方法

    公开(公告)号:US07427524B2

    公开(公告)日:2008-09-23

    申请号:US11202596

    申请日:2005-08-11

    Abstract: Optoelectronic device packaging assemblies and methods of making the same are described. In one aspect, an optoelectronic device packaging assembly includes an electrical sub-mount that includes a mounting area, a device turning mount, and a light-emitting device. The device turning mount has a sub-mount mounting side that is attached to the mounting area of the electrical sub-mount and a device mounting side that has a device mounting area that is oriented in a plane that is substantially perpendicular to the mounting area of the electrical sub-mount. The light-emitting device includes one or more semiconductor layers that terminate at a common light-emitting surface and are operable to emit light from the light-emitting surface. The light-emitting device is attached to the device mounting area of the device turning mount with the light-emitting surface oriented in a plane that is substantially parallel to the mounting area of the electrical sub-mount.

    Abstract translation: 描述了光电器件封装组件及其制造方法。 在一个方面,一种光电子器件封装组件包括一个包括安装区域的电子安装座,一个装置转动架和一个发光装置。 装置转向架具有安装在电子安装座的安装区域上的副安装安装侧和装置安装侧,该装置安装侧具有在与基本上垂直于 电子底座。 发光器件包括一个或多个半导体层,其终止于共同的发光表面并且可操作以从发光表面发射光。 发光装置被附接到装置转向架的装置安装区域,其中发光表面定向在基本上平行于电子安装座的安装区域的平面内。

    Heat bond seaming tape and method of manufacture
    2.
    发明授权
    Heat bond seaming tape and method of manufacture 失效
    热键接缝胶带及其制造方法

    公开(公告)号:US5691051A

    公开(公告)日:1997-11-25

    申请号:US551423

    申请日:1995-11-01

    Abstract: A heat bond seaming tape has a base formed of a strip of paper or a paper-like material and an overlying strip of an open mesh material. A plurality of transversely spaced, longitudinally extending beads of a hot melt thermoplastic adhesive material is placed on a top surface of the mesh for adhering the tape to the backs of adjacent carpet edges. A strip of a rigid thermoplastic material is sandwiched between the base strip and the strip of open mesh and extends longitudinally along the center of the strip and extends transversely across the carpet seam to prevent seam buckling. The plastic strip is formed by a plurality of separate or flexibly connected hard plastic members to enable the tape to be formed into a roll for transportation and storage. The invention also relates to the method of forming the improved heat bond seaming tape.

    Abstract translation: 热粘合缝合带具有由纸条或纸状材料形成的基底和开放的网状材料的覆盖带。 多个横向间隔开的纵向延伸的热熔性热塑性粘合剂材料的珠粒被放置在网的顶表面上,用于将带粘附到相邻地毯边缘的后部。 刚性热塑性材料条被夹在基底条和开放网状物条之间,并沿着条带的中心纵向延伸,横向穿过地毯接缝,以防止接缝弯曲。 塑料条由多个单独或柔性连接的硬塑料构件形成,以使带能够形成为用于运输和储存的卷。 本发明还涉及形成改进的热粘合缝合带的方法。

    Bipolar junction transistor exhibiting improved beta punch-through
characteristics
    3.
    发明授权
    Bipolar junction transistor exhibiting improved beta punch-through characteristics 失效
    双极结晶体管具有改进的β穿透特性

    公开(公告)号:US5386140A

    公开(公告)日:1995-01-31

    申请号:US114980

    申请日:1993-08-31

    Abstract: A bipolar transistor having an emitter, a base, and a collector includes an intrinsic base region having narrow side areas and a wider central area. The side areas are located adjacent to the extrinsic base region, while the central area is disposed underneath the emitter. The lateral doping profile of the base is tailored so that the doping concentrations in the extrinsic region and the central area are relatively high compared to the doping concentration of the narrow side areas of the intrinsic base. The combination of the narrow side areas and the lateral base doping profile constrains the depletion region within the base thereby lowering punch-through voltage of the transistor without loss of beta.

    Abstract translation: 具有发射极,基极和集电极的双极晶体管包括具有窄侧面区域和较宽中心区域的本征基极区域。 侧面区域位于外部基极区域附近,而中央区域设置在发射体下方。 定制基极的横向掺杂分布,使得与本征基极的窄边区域的掺杂浓度相比,外在区域和中心区域中的掺杂浓度相对较高。 窄边区域和横向基极掺杂曲线的组合限制了基极内的耗尽区域,从而降低晶体管的穿通电压而不损失β。

    Heat exchanger for solid-state electronic devices
    5.
    发明授权
    Heat exchanger for solid-state electronic devices 失效
    固态电子器件换热器

    公开(公告)号:US5232047A

    公开(公告)日:1993-08-03

    申请号:US820365

    申请日:1992-01-14

    CPC classification number: F28F3/12 H01L23/473 F28F2260/02 H01L2924/0002

    Abstract: A microscopic laminar-flow heat exchanger, well-suited for cooling a heat generating device such as a semiconductor integrated circuit, includes a plurality of thin plates, laminated together to form a block. Each plate has a microscopic recessed portion etched into one face of the plate and a pair of holes cut through the plate such that when the block is formed, the holes align to form a pair of coolant distribution manifolds. The manifolds are connected via the plurality of microscopic channels formed from the recessed portions during the lamination process. Coolant flow through these channels effectuates heat removal.

    Abstract translation: 适用于冷却诸如半导体集成电路的发热装置的微型层流式热交换器包括多个薄板,层压在一起以形成块体。 每个板具有蚀刻到板的一个面中的微观凹陷部分和穿过板切割的一对孔,使得当形成块时,孔对准以形成一对冷却剂分配歧管。 在层压过程中,歧管通过由凹部形成的多个微细通道相连接。 通过这些通道的冷却液流动可实现除热。

    Process for fabricating polysilicon resistors and interconnects
    6.
    发明授权
    Process for fabricating polysilicon resistors and interconnects 失效
    制造多晶硅电阻和互连的工艺

    公开(公告)号:US5108945A

    公开(公告)日:1992-04-28

    申请号:US647709

    申请日:1991-01-28

    Abstract: A process for faricating polysilicon resistors and polysilicon interconnects coupled to MOS field-effect devices in a silicon substrate includes the steps of depositing and etching a first polysilicon layer to form the gates of the MOS devices; then depositing a second layer of polysilicon between the gates. The second polysilicon layer is then etched so that its upper surface is substantially coplanar with the gates. Contact openings are then defined to the source, drain and gate members of the devices through an insulative layer formed over the first and second polysilicon layers. Next, a metal layer is deposited to fill the openings and is patterned to define electrical contacts to the devices. The patterning step also defines the interconnect lines in the metal layer. A third polysilicon layer is then deposited and patterned to define the polysilicon resistors and interconnects.

    Abstract translation: 耦合到硅衬底中的MOS场效应器件的多晶硅电阻器和多晶硅互连件的处理过程包括沉积和蚀刻第一多晶硅层以形成MOS器件的栅极的步骤; 然后在所述栅极之间沉积第二层多晶硅。 然后蚀刻第二多晶硅层,使得其上表面与栅极基本上共面。 然后通过形成在第一和第二多晶硅层上的绝缘层将接触开口限定到器件的源极,漏极和栅极部件。 接下来,沉积金属层以填充开口并被图案化以限定到器件的电触点。 图案化步骤还限定了金属层中的互连线。 然后沉积和图案化第三多晶硅层以限定多晶硅电阻器和互连。

    Modular wastewater treatment system
    7.
    发明授权
    Modular wastewater treatment system 失效
    模块化废水处理系统

    公开(公告)号:US06379545B1

    公开(公告)日:2002-04-30

    申请号:US09645294

    申请日:2000-08-24

    Abstract: A modular system for treating wastewater is designed having different phases. In an initial phase, plural tanks are provided, including at least one reactor and digester tank. In a subsequent phase, at least one of the tanks is converted into a different type of tank, and additional new tanks are provided to accommodate larger quantities of wastewater. In one embodiment, conversion of at least one of the tanks is accomplished by removing a temporary wall from a digester tank to create another reactor tank.

    Abstract translation: 用于处理废水的模块化系统设计具有不同的相位。 在初始阶段,提供多个罐,包括至少一个反应器和蒸煮罐。 在随后的阶段中,至少一个罐被转换成不同类型的罐,并且提供另外的新罐以容纳更大量的废水。 在一个实施例中,通过从蒸煮罐移除临时壁以产生另一个反应器罐来实现至少一个罐的转化。

    Method of fabricating a heat exchanger for solid-state electronic devices
    9.
    发明授权
    Method of fabricating a heat exchanger for solid-state electronic devices 失效
    制造固态电子器件热交换器的方法

    公开(公告)号:US5274920A

    公开(公告)日:1994-01-04

    申请号:US820366

    申请日:1992-01-14

    Abstract: A microscopic laminar-flow heat exchanger, well-suited for cooling a heat generating device such as a semiconductor integrated circuit, includes a plurality of thin plates, laminated together to form a block. Each plate has a microscopic recessed portion etched into one face of the plate and a pair of holes cut through the plate such that when the block is formed, the holes align to form a pair of coolant distribution manifolds. The manifolds are connected via the plurality of microscopic channels formed from the recessed portions during the lamination process. Coolant flow through these channels effectuates heat removal.

    Abstract translation: 适于冷却诸如半导体集成电路的发热装置的微型层流式热交换器包括多个薄板,层压在一起以形成块体。 每个板具有蚀刻到板的一个面中的微观凹陷部分和穿过板切割的一对孔,使得当形成块时,孔对准以形成一对冷却剂分配歧管。 在层压过程中,歧管通过由凹部形成的多个微细通道相连接。 通过这些通道的冷却液流动可实现除热。

    Lithographical mask for controlling the dimensions of resist patterns
    10.
    发明授权
    Lithographical mask for controlling the dimensions of resist patterns 失效
    用于控制抗蚀剂图案尺寸的光刻掩模

    公开(公告)号:US5256505A

    公开(公告)日:1993-10-26

    申请号:US933393

    申请日:1992-08-21

    CPC classification number: G03F7/70433 G03F1/36 G03F7/70441

    Abstract: A mask for transferring square and rectangular features having critical dimensions (CDs) close to the resolution limit of the exposure tool utilized to perform the transference is described. Intensity modulation lines having the opposite transparency as the rectangular feature to be transferred, and a width significantly less than the resolution of the exposure tool, are disposed within the rectangular feature. The intensity modulation lines have the affect of damping intensity levels on the resist layer in the center of the rectangular feature. As a result, the final CD measurement of the rectangular feature is within the CD tolerance of the original designed CD measurement. In addition, since modulation lines are have dimensions well below the resolution limit of the exposure tool, they are not seen in the final rectangular resist pattern.

    Abstract translation: 描述用于传送具有接近用于执行转移的曝光工具的分辨率极限的临界尺寸(CD)的正方形和矩形特征的掩模。 具有与要传送的矩形特征相反的透明度的强度调制线和明显小于曝光工具的分辨率的宽度被布置在矩形特征内。 强度调制线具有矩形特征中心的抗蚀剂层上的阻尼强度水平的影响。 因此,矩形特征的最终CD测量在原始设计的CD测量的CD容差范围内。 此外,由于调制线的尺寸远远低于曝光工具的分辨率极限,所以在最终的矩形抗蚀剂图案中看不到。

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