公开(公告)号：US08361566B2

公开(公告)日：2013-01-29

申请号：US12099556

申请日：2008-04-08

Applicant: James L. Maxwell

Inventor： James L. Maxwell

IPC: C23C16/48

CPC classification number: C23C16/4418 ,  B81C99/0095 ,  B81C2201/0188 ,  C23C16/4415 ,  C23C16/455 ,  C23C16/4551 ,  C23C16/483

Abstract: A method of growing a plurality of free-standing structures comprises providing a plurality of free-standing structures, each free-standing structure having a first end coupled to a substrate, and a terminal end; providing at least one laser beam, the laser beam having a beam waste at a point proximate to the terminal end of the free-standing structure; and moving one of the plurality of freestanding structures or the beam waste to provide a growth zone proximate to the terminal end of each of the free-standing structures such that the free-standing structures grow into the growth zones by addition of decomposing precursor components. The growth rates of each of the free-standing structures are substantially the same.

Abstract translation: 生长多个独立结构的方法包括提供多个独立结构，每个独立结构具有耦合到衬底的第一端和终端; 提供至少一个激光束，所述激光束在靠近所述独立结构的终端的点处具有光束废料; 并且移动所述多个独立结构或束废料中的一个以提供靠近每个独立结构的末端的生长区，使得通过添加分解的前体组分而使自立结构生长到生长区中。 每个独立结构的增长率基本相同。

公开(公告)号：US20090250844A1

公开(公告)日：2009-10-08

申请号：US12099601

申请日：2008-04-08

Applicant: James L. Maxwell ,  Craig A. Chavez ,  Marcie R. Black

Inventor： James L. Maxwell ,  Craig A. Chavez ,  Marcie R. Black

IPC: B29C35/08

CPC classification number: B29C35/08 ,  B22F3/1055 ,  B22F2999/00 ,  B28B1/00 ,  B28B1/001 ,  B33Y10/00 ,  C22C47/00 ,  Y02P10/295 ,  Y10T156/108 ,  B22F9/30

Abstract: A method of manufacturing an article comprises providing a first sheet, wetting the first sheet with a liquid precursor to provide a first wet sheet, and irradiating the first wet sheet in a pattern corresponding to a first cross section of the article such that the liquid precursor is at least partially converted to a solid in the first cross section. A second sheet is disposed adjacent to the first sheet. The method further comprises wetting the second sheet with the liquid precursor to provide a second wet sheet, and irradiating the second wet sheet in a pattern corresponding to a second cross section of the article such that the liquid precursor is at least partially converted to a solid in the second cross section. In particular the liquid precursor may be converted to a metal, ceramic, semiconductor, semimetal, or a combination of these materials.

Abstract translation: 制造制品的方法包括提供第一片材，用液体前体润湿第一片材以提供第一湿片材，并且以对应于制品的第一横截面的图案照射第一湿片材，使得液体前体 在第一横截面中至少部分地转化为固体。 第二片与第一片相邻地设置。 该方法还包括用液体前体润湿第二片材以提供第二湿片材，并且以对应于制品的第二横截面的图案照射第二湿片材，使得液体前体至少部分转化为固体 在第二个横截面。 特别地，液体前体可以转化为金属，陶瓷，半导体，半金属或这些材料的组合。

公开(公告)号：US5786023A

公开(公告)日：1998-07-28

申请号：US600454

申请日：1996-02-13

Applicant: James L. Maxwell ,  Joseph Pegna

Inventor： James L. Maxwell ,  Joseph Pegna

IPC: C23C16/44 ,  C23C26/00 ,  C23C8/00 ,  B05D3/12 ,  C04B40/00

CPC classification number: C23C26/00 ,  C23C16/4418

Abstract: Method and apparatus for the selective heat-induced deposition of solid material from gas-phase or super-critical fluids to produce three-dimensional parts by pyrolysis of the fluids. The apparatus involves computer/feedback control of the evolving shape by direct monitoring of the volumetric deposition rate or growth profile, and modifying light beam focal properties, the position and orientation of the deposit relative to the beam foci, and/or the pressure and flow of reactants to the growth zone. The precursor gases may be pressurized and heated to the critical point or beyond, becoming super-critical fluids, without condensation. Growth occurs by diffusion of reactants to the growth zone through a boundary layer over the deposit. One method of growth includes directing a large-area impinging jet of precursor fluid(s) onto a deposit interface, while limiting the reaction zone to a smaller area determined solely by size of the heated zone (through use of a radiant beam, e.g.). Another method comprises directing a small-area impinging jet of precursor fluid onto a deposit interface, where the heated region is larger than the jet size. Inclusion of a powder admixture and a precursor as a reactant, flowed jointly at high-pressures, create a two-phase flow, facilitated by increased viscosity of precursor fluid at high pressures. The powder may also be flowed separately, and adds volume and properties to the deposit material. Thus, the invention allows continuous growth of single- or multi-material, three-dimensional microstructures with internal features and characteristic dimensions from microns to decimeters.

Abstract translation: 用于从气相或超临界流体选择性热诱导沉积固体材料以通过流体热解产生三维部分的方法和装置。 该装置涉及通过直接监测体积沉积速率或生长曲线，以及修改光束焦点特性，沉积物相对于束焦点的位置和取向，和/或压力和流动来对演化形状进行计算机/反馈控制 的反应物到生长区。 前体气体可以被加压并加热到临界点或更高温度，成为超临界流体，而不会凝结。 通过沉积物上的边界层将反应物扩散到生长区域进行生长。 一种生长方法包括将大面积入射的前体流体喷射到沉积界面上，同时将反应区域限制在仅通过加热区域尺寸确定的较小区域（通过使用辐射束，例如） 。 另一种方法包括将小面积的前体流体射流引导到沉积界面上，其中加热区域大于射流尺寸。 包含粉末混合物和作为反应物的前体作为反应物，在高压下共同流动，产生两相流，其通过在高压下增加前体流体的粘度来促进。 粉末也可以分开流动，并为沉积材料增加体积和性质。 因此，本发明允许具有内部特征和特征尺寸从微米到分米的单材料或多材料三维微结构的连续生长。

公开(公告)号：US20100289060A1

公开(公告)日：2010-11-18

申请号：US12753682

申请日：2010-04-02

Applicant: James L. Maxwell ,  Chris R. Rose ,  Marcie R. Black ,  Robert W. Springer

Inventor： James L. Maxwell ,  Chris R. Rose ,  Marcie R. Black ,  Robert W. Springer

IPC: H01L21/205 ,  H01L21/02 ,  H01L29/861

CPC classification number: H01L21/205 ,  B81C1/0019 ,  H01L21/02521 ,  H01L21/02532 ,  H01L21/02573 ,  H01L21/0259 ,  H01L21/0262 ,  H01L21/02636 ,  H01L21/28556 ,  H01L21/8213 ,  H01L29/66143 ,  H01L29/872

Abstract: Microelectronic structures and devices, and method of fabricating a three-dimensional microelectronic structure is provided, comprising passing a first precursor material for a selected three-dimensional microelectronic structure into a reaction chamber at temperatures sufficient to maintain said precursor material in a predominantly gaseous state; maintaining said reaction chamber under sufficient pressures to enhance formation of a first portion of said three-dimensional microelectronic structure; applying an electric field between an electrode and said microelectronic structure at a desired point under conditions whereat said first portion of a selected three-dimensional microelectronic structure is formed from said first precursor material; positionally adjusting either said formed three-dimensional microelectronic structure or said electrode whereby further controlled growth of said three-dimensional microelectronic structure occurs; passing a second precursor material for a selected three-dimensional microelectronic structure into a reaction chamber at temperatures sufficient to maintain said precursor material in a predominantly gaseous state; maintaining said reaction chamber under sufficient pressures whereby a second portion of said three-dimensional microelectronic structure formation is enhanced; applying an electric field between an electrode and said microelectronic structure at a desired point under conditions whereat said second portion of a selected three-dimensional microelectronic structure is formed from said second precursor material; and, positionally adjusting either said formed three-dimensional microelectronic structure or said electrode whereby further controlled growth of said three-dimensional microelectronic structure occurs.

Abstract translation: 提供微电子结构和器件以及制造三维微电子结构的方法，包括在足以将所述前体材料维持在主要气态的温度下将用于选定的三维微电子结构的第一前体材料通入反应室; 将所述反应室保持在足够的压力下以增强所述三维微电子结构的第一部分的形成; 在所选择的三维微电子结构的所述第一部分由所述第一前体材料形成的条件下，在所需点处在电极和所述微电子结构之间施加电场; 位置地调整所述形成的三维微电子结构或所述电极，由此发生所述三维微电子结构的进一步控制的生长; 在足以将所述前体材料保持在主要气态的温度下，将用于选定的三维微电子结构的第二前体材料通入反应室; 将所述反应室保持在足够的压力下，从而提高所述三维微电子结构形成的第二部分; 在所选择的三维微电子结构的所述第二部分由所述第二前体材料形成的条件下，在所需点处在电极和所述微电子结构之间施加电场; 并且，位置地调整所述形成的三维微电子结构或所述电极，由此发生所述三维微电子结构的进一步控制的生长。

公开(公告)号：US5526111A

公开(公告)日：1996-06-11

申请号：US114897

申请日：1993-08-31

Applicant: Rick L. Collins ,  Martin T. Gerber ,  Zindel H. Heller ,  James L. Maxwell ,  Edna C. Probst ,  Loy M. Vail ,  Stefan Weinert ,  Morris J. Young

Inventor： Rick L. Collins ,  Martin T. Gerber ,  Zindel H. Heller ,  James L. Maxwell ,  Edna C. Probst ,  Loy M. Vail ,  Stefan Weinert ,  Morris J. Young

IPC: G01N33/86 ,  G01N33/49 ,  G06Q50/00 ,  G06F159/00

CPC classification number: G01N33/4905 ,  Y10S128/22

Abstract: A method for calculating a coagulation characteristic of a sample of blood, a blood fraction, or a control comprises generating an output signal indicative of coagulation of the sample, sampling the output signal at a sampling rate for a predetermined time to provide a plurality of sampled signal values, storing the sampled signal values, rectifying the stored sampled signal values to provide a plurality of envelope values, and storing the envelope values. The stored envelope values are examined in reverse time order to determine a slope of the envelope at each of the stored envelope values. All relative maxima in the stored envelope values are identified. A range of stored envelope values corresponding to each relative maximum is determined. The identified relative maxima are compared to locate an absolute maximum in the stored envelope values. The coagulation characteristic is then calculated from the stored envelope values within the predetermined range of envelope values corresponding to the absolute maximum.

Abstract translation: 用于计算血液，血液分数或对照样品的凝固特性的方法包括产生表示样品凝结的输出信号，以采样速率对输出信号进行采样预定时间以提供多个采样 信号值，存储采样的信号值，整理存储的采样信号值以提供多个包络值，以及存储包络值。 以反向时间顺序检查存储的包络值，以确定每个存储的包络值处的包络的斜率。 识别存储的包络值中的所有相对最大值。 确定对应于每个相对最大值的存储包络值的范围。 将所识别的相对最大值进行比较，以确定存储的包络值中的绝对最大值。 然后从对应于绝对最大值的包络值的预定范围内的存储的包络值计算凝结特性。

公开(公告)号：US08669164B2

公开(公告)日：2014-03-11

申请号：US12753682

申请日：2010-04-02

Applicant: James L. Maxwell ,  Chris R. Rose ,  Marcie R. Black ,  Robert W. Springer

Inventor： James L. Maxwell ,  Chris R. Rose ,  Marcie R. Black ,  Robert W. Springer

IPC: H01L21/205 ,  H01L21/365 ,  C01B33/02 ,  C01B35/00

CPC classification number: H01L21/205 ,  B81C1/0019 ,  H01L21/02521 ,  H01L21/02532 ,  H01L21/02573 ,  H01L21/0259 ,  H01L21/0262 ,  H01L21/02636 ,  H01L21/28556 ,  H01L21/8213 ,  H01L29/66143 ,  H01L29/872

Abstract: Microelectronic structures and devices, and method of fabricating a three-dimensional microelectronic structure is provided, comprising passing a first precursor material for a selected three-dimensional microelectronic structure into a reaction chamber at temperatures sufficient to maintain said precursor material in a predominantly gaseous state; maintaining said reaction chamber under sufficient pressures to enhance formation of a first portion of said three-dimensional microelectronic structure; applying an electric field between an electrode and said microelectronic structure at a desired point under conditions whereat said first portion of a selected three-dimensional microelectronic structure is formed from said first precursor material; positionally adjusting either said formed three-dimensional microelectronic structure or said electrode whereby further controlled growth of said three-dimensional microelectronic structure occurs; passing a second precursor material for a selected three-dimensional microelectronic structure into a reaction chamber at temperatures sufficient to maintain said precursor material in a predominantly gaseous state; maintaining said reaction chamber under sufficient pressures whereby a second portion of said three-dimensional microelectronic structure formation is enhanced; applying an electric field between an electrode and said microelectronic structure at a desired point under conditions whereat said second portion of a selected three-dimensional microelectronic structure is formed from said second precursor material; and, positionally adjusting either said formed three-dimensional microelectronic structure or said electrode whereby further controlled growth of said three-dimensional microelectronic structure occurs.

Abstract translation: 提供微电子结构和器件以及制造三维微电子结构的方法，包括在足以将所述前体材料维持在主要气态的温度下将用于选定的三维微电子结构的第一前体材料通入反应室; 将所述反应室保持在足够的压力下以增强所述三维微电子结构的第一部分的形成; 在所选择的三维微电子结构的所述第一部分由所述第一前体材料形成的条件下，在所需点处在电极和所述微电子结构之间施加电场; 位置地调整所述形成的三维微电子结构或所述电极，由此发生所述三维微电子结构的进一步控制的生长; 在足以将所述前体材料保持在主要气态的温度下，将用于选定的三维微电子结构的第二前体材料通入反应室; 将所述反应室保持在足够的压力下，从而提高所述三维微电子结构形成的第二部分; 在所选择的三维微电子结构的所述第二部分由所述第二前体材料形成的条件下，在所需点处在电极和所述微电子结构之间施加电场; 并且，位置地调整所述形成的三维微电子结构或所述电极，由此发生所述三维微电子结构的进一步控制的生长。

公开(公告)号：US4291065A

公开(公告)日：1981-09-22

申请号：US53159

申请日：1979-06-29

Applicant: Henry F. Zobel ,  James L. Maxwell

Inventor： Henry F. Zobel ,  James L. Maxwell

IPC: A21D2/18 ,  A21D13/00

CPC classification number: A21D2/181

Abstract: The staling of sweet baked goods comprising starch, water and sweetener is reduced from conventional levels. This may be accomplished by incorporating a preservative agent sugar having high unit anti-staling activity into the sweetener and/or by increasing the total amount of sugar in the sweetener.

Abstract translation: 包括淀粉，水和甜味剂在内的甜食烘焙食品的陈设从常规水平降低。 这可以通过将具有高单位抗陈化活性的防腐剂糖掺入甜味剂和/或通过增加甜味剂中的糖的总量来实现。

公开(公告)号：US08157948B2

公开(公告)日：2012-04-17

申请号：US12099601

申请日：2008-04-08

Applicant: James L. Maxwell ,  Craig A. Chavez ,  Marcie R. Black

Inventor： James L. Maxwell ,  Craig A. Chavez ,  Marcie R. Black

IPC: B29C35/08

CPC classification number: B29C35/08 ,  B22F3/1055 ,  B22F2999/00 ,  B28B1/00 ,  B28B1/001 ,  B33Y10/00 ,  C22C47/00 ,  Y02P10/295 ,  Y10T156/108 ,  B22F9/30

Abstract: A method of manufacturing an article comprises providing a first sheet, wetting the first sheet with a liquid precursor to provide a first wet sheet, and irradiating the first wet sheet in a pattern corresponding to a first cross section of the article such that the liquid precursor is at least partially converted to a solid in the first cross section. A second sheet is disposed adjacent to the first sheet. The method further comprises wetting the second sheet with the liquid precursor to provide a second wet sheet, and irradiating the second wet sheet in a pattern corresponding to a second cross section of the article such that the liquid precursor is at least partially converted to a solid in the second cross section. In particular the liquid precursor may be converted to a metal, ceramic, semiconductor, semimetal, or a combination of these materials.

Abstract translation: 制造制品的方法包括提供第一片材，用液体前体润湿第一片材以提供第一湿片材，并且以对应于制品的第一横截面的图案照射第一湿片材，使得液体前体 在第一横截面中至少部分地转化为固体。 第二片与第一片相邻地设置。 该方法还包括用液体前体润湿第二片材以提供第二湿片材，并且以对应于制品的第二横截面的图案照射第二湿片材，使得液体前体至少部分转化为固体 在第二个横截面。 特别地，液体前体可以转化为金属，陶瓷，半导体，半金属或这些材料的组合。

公开(公告)号：US20120031644A1

公开(公告)日：2012-02-09

申请号：US13088042

申请日：2011-04-15

Applicant: James L. Maxwell ,  Chris Randall Rose ,  Fred Michael Mueller

Inventor： James L. Maxwell ,  Chris Randall Rose ,  Fred Michael Mueller

IPC: H01B5/00 ,  B05D5/12

CPC classification number: H01B1/04

Abstract: Ultraconducting devices and methods of making thereof, said ultraconducting devices comprising continuous, aligned carbon nanotubes and a metallic matrix which substantially surrounds the carbon nanotubes.

Abstract translation: 超导装置及其制造方法，所述超导装置包括连续排列的碳纳米管和基本上围绕碳纳米管的金属基体。