Abstract:
Provided are a method for etching a metal or metal oxide without using a reagent, etc., that affects the environment, a method for smoothing a surface of a metal or metal oxide on an atomic level, and a method for patterning on an atomic level. Etching of a metal or metal oxide, or smoothing of a surface of a metal or metal oxide is possible using ozone water in which only ozone is dissolved. Patterning can also be performed by providing a metal that does not dissolve in the ozone water as a resist on a metal or metal oxide that can be etched by ozone water in which only ozone is dissolved, and etching using the ozone water.
Abstract:
Provided are a method for etching a metal or metal oxide without using a reagent, etc., that affects the environment, a method for smoothing a surface of a metal or metal oxide on an atomic level, and a method for patterning on an atomic level. Etching of a metal or metal oxide, or smoothing of a surface of a metal or metal oxide is possible using ozone water in which only ozone is dissolved. Patterning can also be performed by providing a metal that does not dissolve in the ozone water as a resist on a metal or metal oxide that can be etched by ozone water in which only ozone is dissolved, and etching using the ozone water.