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    Short point-of-interest title generation
    1.
    发明授权
    Short point-of-interest title generation 有权
    短期利益标题产生

    公开(公告)号：US08429204B2

    公开(公告)日：2013-04-23

    申请号：US13549340

    申请日：2012-07-13

    Applicant: Jiang Qian ,  Vincent Zhou ,  Bo Zheng ,  Yu Zheng

    Inventor： Jiang Qian ,  Vincent Zhou ,  Bo Zheng ,  Yu Zheng

    IPC: G06F17/30 ,  G06F17/28

    CPC classification number: G06F17/2745

    Abstract: Short POI titles are generated by removing unnecessary administrative area prefixes from existing POI titles and replacing necessary administrative area prefixes with shorter aliases. Administrative area prefixes are identified and analyzed to determine whether they are necessary. The analysis includes determining (1) whether the remainders with the prefixes excluded include a common suffix as a prefix, and (2) whether the remainders are unique in an applicable metropolis area. If a remainder does not include as a prefix a common suffix and is unique in the applicable metropolis area, the corresponding prefix is determined unnecessary and removed from the existing POI title to generate a short POI title. Otherwise, the corresponding prefix is determined necessary and replaced with a shorter alias to generate a short POI title.

    Abstract translation: 通过从现有POI标题中删除不必要的管理区域前缀，并用较短的别名替换必要的管理区域前缀来生成简短的POI标题。 对行政区域前缀进行识别和分析，以确定它们是否必要。 分析包括确定（1）排除前缀的余数是否包括作为前缀的公共后缀，以及（2）在适用的大都会区域中剩余部分是否是唯一的。 如果余数不包括作为前缀的公共后缀，并且在适用的大都市区域中是唯一的，则相应的前缀被确定为不必要的并且从现有POI标题中移除以生成短的POI标题。 否则，相应的前缀被确定为必需，并用较短的别名替换以生成短的POI标题。

    POLYCRYSTALLINE DIAMOND COMPACT INCLUDING A CARBONATE-CATALYZED POLYCRYSTALLINE DIAMOND TABLE AND APPLICATIONS THEREFOR
    2.
    发明申请
    POLYCRYSTALLINE DIAMOND COMPACT INCLUDING A CARBONATE-CATALYZED POLYCRYSTALLINE DIAMOND TABLE AND APPLICATIONS THEREFOR 有权
    多晶金刚石，包括碳酸钙催化的多晶金刚石表及其应用

    公开(公告)号：US20130043078A1

    公开(公告)日：2013-02-21

    申请号：US13552052

    申请日：2012-07-18

    Applicant: Jiang Qian ,  C. Eugene McMurray ,  Debkumar Mukhopadhyay ,  Jason K. Wiggins ,  Michael A. Vail ,  Kenneth E. Bertagnolli

    Inventor： Jiang Qian ,  C. Eugene McMurray ,  Debkumar Mukhopadhyay ,  Jason K. Wiggins ,  Michael A. Vail ,  Kenneth E. Bertagnolli

    IPC: B24D3/06 ,  B23B51/00 ,  E21B10/46 ,  B24D18/00

    CPC classification number: B24D3/10 ,  B22F7/062 ,  B22F2005/001 ,  B24D18/0009 ,  C22C26/00 ,  E21B10/54 ,  E21B10/56 ,  E21B10/567 ,  F16C33/043 ,  F16C33/108 ,  F16C2352/00 ,  Y10T408/89

    Abstract: In an embodiment, a polycrystalline diamond compact includes a substrate and a preformed polycrystalline diamond table bonded to the substrate. The table includes bonded diamond grains defining interstitial regions. The table includes an upper surface, a back surface bonded to the substrate, and at least one lateral surface extending therebetween. The table includes a first region extending inwardly from the upper surface and the lateral surface. The first region exhibits a first interstitial region concentration and includes at least one interstitial constituent disposed therein, which may be present in at least a residual amount and includes at least one metal carbonate and/or at least one metal oxide. The table includes a second bonding region adjacent to the substrate that extends inwardly from the back surface. The second bonding region exhibits a second interstitial region concentration that is greater than the first interstitial region concentration and includes a metallic infiltrant therein.

    Abstract translation: 在一个实施例中，多晶金刚石致密体包括基底和结合到基底的预成型多晶金刚石台。 该表包括定义间隙区域的结合金刚石颗粒。 桌子包括上表面，粘合到基底的后表面和在它们之间延伸的至少一个侧表面。 桌子包括从上表面和侧表面向内延伸的第一区域。 第一区域表现出第一间隙区域浓度并且包括至少一个置于其中的间隙成分，其可以以至少残留量存在并且包括至少一种金属碳酸盐和/或至少一种金属氧化物。 桌子包括与衬底相邻的第二接合区域，其从后表面向内延伸。 第二结合区域表现出比第一间隙区域浓度大的第二间隙区域浓度，并且其中包括金属渗透剂。

    Polycrystalline diamond materials and related products
    3.
    发明授权
    Polycrystalline diamond materials and related products 失效
    多晶金刚石材料及相关产品

    公开(公告)号：US08361429B2

    公开(公告)日：2013-01-29

    申请号：US13245249

    申请日：2011-09-26

    Applicant: Michael A. Vail ,  Kenneth E. Bertagnolli ,  Jason Wiggins ,  Jiang Qian ,  David P. Miess

    Inventor： Michael A. Vail ,  Kenneth E. Bertagnolli ,  Jason Wiggins ,  Jiang Qian ,  David P. Miess

    IPC: B01J3/06 ,  E21B10/36 ,  B24D3/02 ,  C09C1/68 ,  B29C67/00

    CPC classification number: E21B10/46 ,  B01J3/062 ,  B01J2203/062 ,  B01J2203/0655 ,  B01J2203/0685

    Abstract: Embodiments relate to methods of fabricating PCD materials by subjecting a mixture that exhibits a broad diamond particle size distribution to an HPHT process, PCD materials so-formed, and PDCs including a polycrystalline diamond table comprising such PCD materials. In an embodiment, a PCD material includes a plurality of bonded diamond grains that exhibit a substantially unimodal diamond grain size distribution characterized, at least in part, by a parameter θ that is less than about 1.0. θ = x 6 · σ , where x is the average grain size of the substantially unimodal diamond grain size distribution, and σ is the standard deviation of the substantially unimodal diamond grain size distribution.

    Abstract translation: 实施方案涉及通过使表现出宽金刚石粒度分布的混合物经受HPHT方法，所形成的PCD材料和包括包含这种PCD材料的多晶金刚石台的PDC来制造PCD材料的方法。 在一个实施方案中，PCD材料包括多个结合的金刚石晶粒，其表现出基本上单峰金刚石晶粒尺寸分布，其至少部分地由参数和特征表征; 小于约1.0。 ＆thetas; = x 6·＆sgr ，其中x是基本上单峰金刚石晶粒尺寸分布的平均晶粒尺寸， 是基本上单峰金刚石晶粒尺寸分布的标准偏差。

    Network transfer protocol
    7.
    发明授权
    Network transfer protocol 有权
    网络传输协议

    公开(公告)号：US07817631B1

    公开(公告)日：2010-10-19

    申请号：US12169928

    申请日：2008-07-09

    Applicant: Jiang Qian

    Inventor： Jiang Qian

    IPC: H04L12/56

    CPC classification number: H04L45/74 ,  H04L1/1607 ,  H04L1/1874 ,  H04L1/188 ,  H04L12/40071 ,  H04L29/0604 ,  H04L29/06102 ,  H04L29/0653 ,  H04L29/1249 ,  H04L47/10 ,  H04L47/193 ,  H04L47/27 ,  H04L61/256 ,  H04L63/029 ,  H04L67/06 ,  H04L69/03 ,  H04L69/16 ,  H04L69/161 ,  H04L69/164 ,  H04L69/22

    Abstract: Systems, methods and computer program products facilitate communication on a network by transmitting a communication on the network from a first node to a second node, the communication including a first segment and a second segment. The first segment consists essentially of a destination port and a data length of the communication, and the second segment includes a payload and at least one of a connection ID, a sequence number, and an opcode. A responsive communication is then received from the second node, the responsive communication acknowledging receipt of the communication transmitted from the first node.

    Abstract translation: 系统，方法和计算机程序产品通过在网络上从第一节点传输到第二节点的通信来促进网络上的通信，该通信包括第一段和第二段。 第一段基本上由通信的目的地端口和数据长度组成，第二段包括有效负载以及连接ID，序列号和操作码中的至少一个。 然后从第二节点接收响应通信，响应通信确认从第一节点发送的通信的接收。

    Superabrasive element, structures utilizing same, and method of fabricating same
    8.
    发明授权
    Superabrasive element, structures utilizing same, and method of fabricating same 有权
    超级磨料元件，利用其的结构及其制造方法

    公开(公告)号：US07753143B1

    公开(公告)日：2010-07-13

    申请号：US11638075

    申请日：2006-12-13

    Applicant: David P. Miess ,  Jiang Qian

    Inventor： David P. Miess ,  Jiang Qian

    IPC: E21B10/36

    CPC classification number: E21B10/5735 ,  C04B35/52 ,  C04B35/6303 ,  C04B35/645 ,  C04B2235/3813 ,  C04B2235/3826 ,  C04B2235/3843 ,  C04B2235/3891 ,  C04B2235/404 ,  C04B2235/427 ,  C04B2235/428 ,  C04B2235/80

    Abstract: According to various aspects of the present invention, a superabrasive element includes a plurality of superabrasive grains (e.g., as diamond grains and/or cubic boron nitride grains). The superabrasive element further includes a binder constituent that bonds at least a portion of the superabrasive grains together. The binder constituent includes predominantly one or more inorganic-compound phases, such as boron or silicon compounds. Applications utilizing such superabrasive elements and methods of fabricating such superabrasive elements are also disclosed.

    Abstract translation: 根据本发明的各个方面，超级磨料元件包括多个超磨料颗粒（例如，作为金刚石颗粒和/或立方氮化硼颗粒）。 超级磨料元件还包括将至少一部分超级磨料颗粒结合在一起的粘合剂成分。 粘合剂成分主要包括一种或多种无机 - 化合物相，例如硼或硅化合物。 还公开了利用这种超级磨料元件的应用和制造这种超级磨料元件的方法。

    Polycrystalline diamond materials, methods of fabricating same, and applications using same
    9.
    发明申请
    Polycrystalline diamond materials, methods of fabricating same, and applications using same 有权
    多晶金刚石材料，其制造方法以及使用其的应用

    公开(公告)号：US20090260895A1

    公开(公告)日：2009-10-22

    申请号：US12148927

    申请日：2008-04-22

    Applicant: Michael A. Vail ,  Kenneth E. Bertagnolli ,  Jason Wiggins ,  Jiang Qian ,  David P. Miess

    Inventor： Michael A. Vail ,  Kenneth E. Bertagnolli ,  Jason Wiggins ,  Jiang Qian ,  David P. Miess

    IPC: E21B10/46 ,  B01J3/06 ,  C09K3/14 ,  B29C43/50

    CPC classification number: E21B10/46 ,  B01J3/062 ,  B01J2203/062 ,  B01J2203/0655 ,  B01J2203/0685

    Abstract: Embodiments relate to methods of fabricating PCD materials by subjecting a mixture that exhibits a broad diamond particle size distribution to a HPHT process, PCD materials so-formed, and PDCs including a polycrystalline diamond table comprising such PCD materials. In an embodiment, a method includes subjecting a mixture to heat and pressure sufficient to form a PCD material. The mixture comprises a plurality of diamond particles exhibiting a diamond particle size distribution characterized, in part, by a parameter θ that is less than about 1.0, where θ = x 6 · σ , x is the average particle size of the diamond particle size distribution, and σ is the standard deviation of the diamond particle size distribution. In an embodiment, the diamond particle size distribution can be generally modeled by the following equation: CPFT 100 = D n - D S n D L n - D S n , wherein CPFT is the cumulative percent finer than, D is diamond grain size, DL is the largest-sized diamond grain, DS is the smallest-sized diamond grain, and n is a distribution modulus.

    Abstract translation: 实施方案涉及通过使表现出宽金刚石粒度分布的混合物经历HPHT方法，所形成的PCD材料以及包括包含这种PCD材料的多晶金刚石台的PDC来制造PCD材料的方法。 在一个实施方案中，一种方法包括使混合物经受足以形成PCD材料的热和压力。 该混合物包括多个金刚石颗粒，其具有金刚石颗粒尺寸分布，其部分表征为参数θ小于约1.0，其中θ= x 6。 sigma，x是金刚石粒度分布的平均粒度，σ是金刚石粒度分布的标准偏差。 在一个实施方案中，金刚石粒度分布通常可以通过以下等式建模：CPFT 100 = D n -DS n DL n-DS n，其中CPFT是比D更精细的累积百分比，D是金刚石晶粒尺寸，DL是 最大尺寸的金刚石颗粒，DS是最小尺寸的金刚石颗粒，n是分布模量。

    Diamond-silicon carbide composite
    10.
    发明授权
    Diamond-silicon carbide composite 有权
    金刚石 - 碳化硅复合材料

    公开(公告)号：US07060641B2

    公开(公告)日：2006-06-13

    申请号：US11110252

    申请日：2005-04-19

    Applicant: Jiang Qian ,  Yusheng Zhao

    Inventor： Jiang Qian ,  Yusheng Zhao

    IPC: C04B35/577

    CPC classification number: C04B35/645 ,  C04B35/52 ,  C04B35/6316 ,  C04B2235/3826 ,  C04B2235/427 ,  C04B2235/428 ,  C04B2235/5436 ,  C04B2235/6567 ,  C04B2235/77 ,  C04B2235/80 ,  C04B2235/96 ,  Y10T428/30

    Abstract: Fully dense, diamond-silicon carbide composites are prepared from ball-milled microcrystalline diamond/amorphous silicon powder mixture. The ball-milled powder is sintered (P=5–8 GPa, T=1400K–2300K) to form composites having high fracture toughness. A composite made at 5 GPa/1673K had a measured fracture toughness of 12 MPa·m1/2. By contrast, liquid infiltration of silicon into diamond powder at 5 GPa/1673K produces a composite with higher hardness but lower fracture toughness. X-ray diffraction patterns and Raman spectra indicate that amorphous silicon is partially transformed into nanocrystalline silicon at 5 GPa/873K, and nanocrystalline silicon carbide forms at higher temperatures.

    Abstract translation: 由球磨微晶金刚石/非晶硅粉末混合物制备全密度的金刚石碳化硅复合材料。 将球磨粉末烧结（P = 5-8GPa，T = 1400K-2300K）以形成具有高断裂韧性的复合材料。 以5GPa / 1673K制成的复合材料具有12MPa.m 1/2的测得的断裂韧性。 相比之下，以5GPa / 1673K将硅浸入金刚石粉末中产生具有较高硬度但较低断裂韧性的复合材料。 X射线衍射图和拉曼光谱表明，非晶硅在5GPa / 873K下部分转变为纳米晶硅，在较高温度下形成纳米晶碳化硅。

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