公开(公告)号：US20170131630A1

公开(公告)日：2017-05-11

申请号：US15412121

申请日：2017-01-23

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Naomi SHIDA ,  Kenji TODORI ,  Shigehiko MORI ,  Reiko YOSHIMURA ,  Hiroyuki KASHIWAGI ,  lkuo YONEDA ,  Tsukasa TADA

IPC: G03F1/76 ,  G03F7/40 ,  G03F7/16 ,  G03F7/20 ,  H01L21/308 ,  H01L21/3065

CPC classification number: G03F1/76 ,  G03F1/38 ,  G03F1/80 ,  G03F7/16 ,  G03F7/20 ,  G03F7/201 ,  G03F7/40 ,  G03F7/7035 ,  H01L21/3065 ,  H01L21/3086

Abstract: A near-field exposure mask according to an embodiment includes: a substrate; a concave-convex structure having convexities and concavities and formed on one surface of the substrate; a near-field light generating film arranged at least on a tip portion of each of the convexities, the near-field light generating film being a layer containing at least one element selected from the group consisting of Au, Al, Ag, Cu, Cr, Sb, W, Ni, In, Ge, Sn, Pb, Zn, Pd, and C, or a film stack formed with layers made of some of those materials; and a resin filled in each of the concavities.