公开(公告)号：US10658537B2

公开(公告)日：2020-05-19

申请号：US16016353

申请日：2018-06-22

Applicant: Kaneka Corporation

Inventor： Toshihiko Uto ,  Masashi Yoshimi

IPC: H01L31/0747 ,  H01L31/20 ,  H01L31/18

Abstract: In manufacturing a crystalline silicon-based solar cell having an intrinsic silicon-based thin film and a conductive silicon-based thin film in this order on a conductive single-crystalline silicon substrate, plasma treatment is performed after the intrinsic silicon-based thin film is formed on the conductive single-crystalline silicon substrate. In the plasma treatment, a surface of the intrinsic silicon-based thin film is exposed to hydrogen plasma while a hydrogen gas and silicon-containing gases are being introduced into a CVD chamber. The amount of the hydrogen introduced into the CVD chamber during the plasma treatment is 150 to 2500 times the introduction amount of the silicon-containing gases.

公开(公告)号：US20180301582A1

公开(公告)日：2018-10-18

申请号：US16016353

申请日：2018-06-22

Applicant: Kaneka Corporation

Inventor： Toshihiko Uto ,  Masashi Yoshimi

IPC: H01L31/0747 ,  H01L31/18

Abstract: In manufacturing a crystalline silicon-based solar cell having an intrinsic silicon-based thin film and a conductive silicon-based thin film in this order on a conductive single-crystalline silicon substrate, plasma treatment is performed after the intrinsic silicon-based thin film is formed on the conductive single-crystalline silicon substrate. In the plasma treatment, a surface of the intrinsic silicon-based thin film is exposed to hydrogen plasma while a hydrogen gas and silicon-containing gases are being introduced into a CVD chamber. The amount of the hydrogen introduced into the CVD chamber during the plasma treatment is 150 to 2500 times the introduction amount of the silicon-containing gases.

公开(公告)号：US20150270422A1

公开(公告)日：2015-09-24

申请号：US14433016

申请日：2013-09-30

Applicant: KANEKA CORPORATION

Inventor： Hisashi Uzu ,  Toru Terashita ,  Daisuke Adachi ,  Masashi Yoshimi ,  Jose Luis Hernandez

IPC: H01L31/0224 ,  H01L31/068 ,  H01L31/0392 ,  H01L31/05 ,  H01L31/0463

CPC classification number: H01L31/022441 ,  H01L31/03921 ,  H01L31/0463 ,  H01L31/0516 ,  H01L31/0682 ,  H01L31/0747 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: A method for producing a crystalline silicon solar cell with a high conversion efficiency and a precisely machined light-incident surface is provided, including a step of forming a first transparent electrode layer, a step of forming a back electrode layer containing copper as a major ingredient on a substantially entire area of a surface of a second main surface side, and the subsequent insulating step of forming an insulating region to remove a short circuit between at least the first transparent electrode layer of the first main surface side and at least a second transparent electrode layer and the back electrode layer of the second main surface side, irradiating an entire periphery of an outer peripheral part of the first main surface onto a position within 3 mm from an outer peripheral end face of a one conductivity-type single crystalline silicon substrate from the first main surface side.

Abstract translation: 提供一种制造具有高转换效率和精密加工的光入射表面的晶体硅太阳能电池的方法，包括形成第一透明电极层的步骤，形成以铜为主要成分的背面电极层的步骤 在第二主表面侧的表面的大致整个区域上，以及随后的绝缘步骤形成绝缘区域以去除至少第一主表面侧的第一透明电极层与至少第二透明电极层之间的短路 电极层和第二主面侧的背面电极层，将第一主面的外周部的整个周边照射到距离一个导电型单晶硅基板的外周端面3mm以内的位置 从第一主表面侧。