公开(公告)号：US11538682B2

公开(公告)日：2022-12-27

申请号：US16761054

申请日：2018-10-16

Applicant: KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY

Inventor： Ming-Hui Chiu ,  Hao-Ling Tang ,  Lain-Jong Li

IPC: H01L21/02 ,  C23C16/04 ,  C23C16/30 ,  C23C16/46 ,  H01L31/072 ,  H01L31/18 ,  H01L33/00

Abstract: A method for growing a transition metal dichalcogenide layer involves arranging a substrate having a first transition metal contained pad is arranged in a chemical vapor deposition chamber. A chalcogen contained precursor is arranged upstream of the substrate in the chemical vapor deposition chamber. The chemical vapor deposition chamber is heated for a period of time during which a transition metal dichalcogenides layer, containing transition metal from the first transition metal contained pad and chalcogen from the chalcogen contained precursor, is formed in an area adjacent to the first transition metal contained pad.

公开(公告)号：US10784353B2

公开(公告)日：2020-09-22

申请号：US16342432

申请日：2017-11-15

Applicant: KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY

Inventor： Lain-Jong Li ,  Hao-Ling Tang ,  Ming-Hui Chiu

IPC: H01L29/267 ,  H01L29/16 ,  H01L29/24 ,  H01L29/66 ,  H01L29/76 ,  H01L29/786

Abstract: A device comprising: at least one first layer, such as a graphene layer, at least one second layer of transition metal dichalcogenide, wherein the at least one first layer and the at least one second layer of transition metal dichalcogenide form at least one heterojunction. The first and second layers are laterally displaced but may overlap over a length of 0 nm to 500 nm. A low-resistance contact is formed. The device can be a transistor including a field effect transistor. The layers can be formed by chemical vapor deposition. The graphene can be heavily p-doped. Transistor performance data are described.