公开(公告)号：US10998452B2

公开(公告)日：2021-05-04

申请号：US16754214

申请日：2018-09-20

Applicant: KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY

Inventor： Ming-Yang Li ,  Jing-Kai Huang ,  Lain-Jong Li

IPC: H01L21/02 ,  H01L29/861 ,  H01L29/24 ,  H01L29/66

Abstract: A method for forming a semiconductor device having a lateral semiconductor heterojunction involves forming a first metal chalcogenide layer of the lateral semiconductor heterojunction adjacent to a first metal electrode on a substrate. The first metal chalcogenide layer includes a same metal as the first metal electrode and at least some of the first metal chalcogenide layer includes metal from the first metal electrode. A second metal chalcogenide layer of the lateral semiconductor heterojunction is formed adjacent to the first metal chalcogenide layer. A second metal electrode is formed adjacent to the second metal chalcogenide layer. The second metal chalcogenide layer includes a same metal as the second metal electrode.

公开(公告)号：US11329170B2

公开(公告)日：2022-05-10

申请号：US17134984

申请日：2020-12-28

Applicant: KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY

Inventor： Ming-Yang Li ,  Jing-Kai Huang ,  Lain-Jong Li

IPC: H01L29/861 ,  H01L21/02 ,  H01L29/24 ,  H01L29/66

Abstract: A method for forming a semiconductor device having a lateral semiconductor heterojunction involves forming a first metal chalcogenide layer of the lateral semiconductor heterojunction adjacent to a first metal electrode on a substrate. The first metal chalcogenide layer includes a same metal as the first metal electrode and at least some of the first metal chalcogenide layer includes metal from the first metal electrode. A second metal chalcogenide layer of the lateral semiconductor heterojunction is formed adjacent to the first metal chalcogenide layer. A second metal electrode is formed adjacent to the second metal chalcogenide layer. The second metal chalcogenide layer includes a same metal as the second metal electrode.