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Patent Agency Ranking
公开(公告)号：US11939228B1
公开(公告)日：2024-03-26
申请号：US18141863
申请日：2023-05-01
Applicant: KING FAISAL UNIVERSITY
Inventor： Nagih Shaalan , Chawki Awada , Faheem Ahmed , Shalendra Kumar
CPC classification number: C01G23/047 , C23C22/05 , C23C22/78 , C23C22/82 , C01P2002/82 , C01P2006/80
Abstract: Methods of obtaining a titanium dioxide nanofilm or microfilm are provided herein. A pure sheet of titanium is irradiated with a CO2 laser to produce the titanium dioxide nanofilm or microfilm. The titanium sheet can optionally be doped with an oxide, such as barium oxide. The method produces titanium dioxide nanofilms or microfilms that can be produced in more than one phase, such as a rutile phase, an anatase phase, or both combined. The titanium dioxide nanofilms or microfilms can be directly fabricated with high purity without any further processing.
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公开(公告)号：US11976365B1
公开(公告)日：2024-05-07
申请号：US18122396
申请日：2023-03-16
Applicant: King Faisal University
Inventor： Faheem Ahmed , Nishat Arshi , Shalendra Kumar , Nagih Mohammed Shaalan , Ghazzai Almutairi , P. M. Z. Hasan , Naushad Ahmad , Thamraa Alshahrani , Afzal Hussain
IPC: C23C18/12
CPC classification number: C23C18/1216 , C23C18/1245 , C23C18/1266 , C23C18/1291
Abstract: A method of forming one-dimensional metal oxide nanostructures includes forming a TiN film on a substrate to provide a TiN-coated substrate; providing an aqueous mixture including hexamethylenetetramine and a metal nitrate, contacting the TiN-coated substrate with the aqueous mixture such that the TiN film on the substrate is in the aqueous mixture, and heating the aqueous mixture at a temperature ranging from about 50° C. to about 100° C. for a period of time ranging from about 60 minutes to about 180 minutes to form the metal oxide nanostructures. The method offers a low-temperature approach for the growth of metal oxide nanostructures. In an embodiment, the metal oxide is zinc oxide (ZnO) and the metal nitrate is zinc nitrate. In an embodiment the substrate is a Si/SiO2 substrate. In an embodiment, the metal oxide nanostructures include one-dimensional nanostructures, such as nanorods.
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公开(公告)号：US11898235B2
公开(公告)日：2024-02-13
申请号：US17498364
申请日：2021-10-11
Applicant: KING FAISAL UNIVERSITY
Inventor： Nagih Mohammed Shaalan , Faheem Ahmed , Osama Sabera , Dalia Hamad , Abdullah Aljaafari , Adil Alshoaibi
Abstract: A method of forming metal nanostructures is a low temperature closed space vacuum deposition method. The method includes disposing a source material in an enclosed space at low evaporation temperatures to controllably form nanostructures of different dimensionalities on a substrate. The nanostructures have dimensionalities determined by a chosen evaporation temperature. An apparatus is also provided for performing the method.
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公开(公告)号：US20220316046A1
公开(公告)日：2022-10-06
申请号：US17498364
申请日：2021-10-11
Applicant: KING FAISAL UNIVERSITY
Inventor： Nagih Mohammed Shaalan , Faheem Ahmed , Osama Sabera , Dalia Hamad , Abdullah Aljaafari , Adil Alshoaibi
Abstract: A method of forming metal nanostructures is a low temperature closed space vacuum deposition method. The method includes disposing a source material in an enclosed space at low evaporation temperatures to controllably form nanostructures of different dimensionalities on a substrate. The nanostructures have dimensionalities determined by a chosen evaporation temperature. An apparatus is also provided for performing the method.
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公开(公告)号：US11242595B1
公开(公告)日：2022-02-08
申请号：US17221786
申请日：2021-04-03
Applicant: KING FAISAL UNIVERSITY
Inventor： Nagih Mohammed Shaalan , Faheem Ahmed , Osama Sabera , Dalia Hamad , Abdullah Aljaafari , Adil Alshoaibi
Abstract: A method of forming metal nanostructures is a low temperature closed space vacuum deposition method. The method includes disposing a source material in an enclosed space at low evaporation temperatures to controllably form nanostructures of different dimensionalities on a substrate. The nanostructures have dimensionalities determined by a chosen evaporation temperature. An apparatus is also provided for performing the method.
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