中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

4 records (took 0.008 seconds)

    METHOD FOR PRODUCING AN INTERCONNECTION COMPRISING A VIA EXTENDING THROUGH A SUBSTRATE
    1.
    发明申请
    METHOD FOR PRODUCING AN INTERCONNECTION COMPRISING A VIA EXTENDING THROUGH A SUBSTRATE 有权

    公开(公告)号：US20210202314A1

    公开(公告)日：2021-07-01

    申请号：US16070506

    申请日：2017-01-16

    Applicant: KOBUS SAS

    Inventor： Julien VITIELLO ,  Fabien PIALLAT

    IPC: H01L21/768 ,  H01L23/48 ,  H01L23/532 ,  C23C16/455 ,  C23C16/34 ,  C25D3/38 ,  C25D5/02 ,  C25D7/12 ,  C23C16/44

    Abstract: The invention relates to a method for producing an interconnection comprising a via (V) extending through a substrate (1), said method successively comprising: (a) the deposition of a layer (11) of titanium nitride or tantalum nitride on a main surface (1A) of the substrate and on the inner surface (10A, 10B) of at least one hole (10) extending into at least part of the thickness of said substrate; (b) the deposition of a layer (12) of copper on said layer (11) of titanium nitride or tantalum nitride; and (c) the filling of the hole (10) with copper, said method being characterized in that, during step (a), the substrate (1) is arranged in a first deposition chamber (100), and in that said step (a) comprises the injection of a titanium or tantalum precursor in a gaseous phase into the deposition chamber via a first injection path according to a first pulse sequence, and the injection of a nitrogen-containing reactive gas into the deposition chamber via a second injection path different from the first injection path according to a second pulse sequence, the first pulse sequence and the second pulse sequence being dephased.

    METHOD FOR PRODUCING ALUMINUIM OXIDE AND/OR NITRIDE
    2.
    发明申请
    METHOD FOR PRODUCING ALUMINUIM OXIDE AND/OR NITRIDE 审中-公开

    公开(公告)号：US20180327907A1

    公开(公告)日：2018-11-15

    申请号：US15775984

    申请日：2016-11-15

    Applicant: KOBUS SAS

    Inventor： Julien VITIELLO ,  Jean-Luc DELCARRI ,  Fabien PIALLAT

    IPC: C23C16/56 ,  C23C16/455 ,  C23C16/12

    CPC classification number: C23C16/56 ,  C23C14/5846 ,  C23C16/12 ,  C23C16/45523 ,  C23C16/45527

    Abstract: The present invention relates to a method for producing a layer (2) of aluminum oxide and/or aluminum nitride (Al2O3, or AIN) on a substrate (1), said method comprising a sequence of consecutive steps a) and b) according to which: a) a basic layer of aluminum (21, 22) having a thickness between 5 and 25 nm is deposited on the substrate (1) in a deposition chamber (10), b) the substrate (1) is moved into a treatment chamber (20) separate from the deposition chamber (10), in which the basic layer of aluminum (21, 22) is oxidized or nitrided to produce a basic layer of aluminum oxide or aluminum nitride (21′ 22′). Said sequence of consecutive steps is repeated in a loop until said layer of aluminum oxide and/or aluminum nitride (2) is obtained by stacking the consecutive layers of aluminum oxide and aluminum nitride (21′ 22′).

Patent Agency Ranking