公开(公告)号：US20250169099A1

公开(公告)日：2025-05-22

申请号：US18682728

申请日：2022-08-09

Applicant: KOREA UNIVERSITY RESEARCH AND BUSINESS FOUNDATION

Inventor： Chul-Ho LEE ,  Donghun LEE

IPC: H10D30/47 ,  H10D30/01 ,  H10D62/80

Abstract: Disclosed are a high-mobility atomic layer semiconductor device based on modulation doping and a method for fabricating the same, which prevent a charge scattering phenomenon caused by ionized impurities by modulation doping dopants such that the dopants are spatially separated from a channel layer of an atomic layer semiconductor device having an atomic layer semiconductor heterojunction structure band-aligned. According to an embodiment of the present disclosure, a high-mobility atomic layer semiconductor device based on modulation doping includes a substrate, an atomic layer semiconductor heterojunction structure band-aligned in type I or type II and including a channel layer allowing movement of an electron and a doping layer, wherein the channel layer and the doping layer are stacked on the substrate, and a dopant formed on the doping layer and including a material for supplying an electron or a hole to the channel layer. The dopant is doped while being spatially separated from the channel layer through the doping layer, instead of being directly doped into the channel layer.