公开(公告)号：US20110017140A1

公开(公告)日：2011-01-27

申请号：US12616195

申请日：2010-02-11

Applicant: Christopher Mark Bailey ,  Michael Andrew Galtry ,  David Engerran ,  Andrew James Seeley ,  Geoffrey Young ,  Michael Alan Eric Wilders ,  Kenneth Allen Aitchison ,  Richard A. Hogle

Inventor： Christopher Mark Bailey ,  Michael Andrew Galtry ,  David Engerran ,  Andrew James Seeley ,  Geoffrey Young ,  Michael Alan Eric Wilders ,  Kenneth Allen Aitchison ,  Richard A. Hogle

IPC: C23C16/00 ,  B01D53/34

CPC classification number: C07C311/21 ,  C07C311/44 ,  C07C2601/02 ,  C07C2601/04

Abstract: A method is described of treating a gas stream exhausted from an atomic layer deposition (ALD) process chamber to which two or more gaseous precursors are alternately supplied. Between the process chamber and a vacuum pump used to draw the gas stream from the chamber, the gas stream is conveyed to a gas mixing chamber, to which a reactant is supplied for reacting with one of the gaseous precursors to form solid material. The gas stream is then conveyed to a cyclone separator to separate solid material from the gas stream. By deliberately reacting a non-reacted precursor to form solid material upstream from the pump, reaction within the pump of the non-reacted precursor and a second non-reacted precursor subsequently drawn from the chamber by the pump can be inhibited.

Abstract translation: 描述了一种处理从原子层沉积（ALD）处理室排出的气流的方法，其中交替地供给两种或更多种气态前体。 在处理室和用于从室中抽取气流的真空泵之间，气流被输送到气体混合室，供应反应物以与气体前体之一反应以形成固体材料。 然后将气流输送到旋风分离器以将固体材料与气流分离。 通过故意使未反应的前体反应以在泵的上游形成固体材料，可以抑制未反应的前体的泵中的反应和随后由泵从室从室抽出的第二未反应的前体。

公开(公告)号：US20090320881A1

公开(公告)日：2009-12-31

申请号：US11285810

申请日：2005-11-23

Applicant: Kenneth Allen Aitchison

Inventor： Kenneth Allen Aitchison

IPC: B08B9/00

CPC classification number: C23C16/4412 ,  C23C16/52 ,  F04C23/001 ,  F04C25/02 ,  G01N21/35 ,  G01N21/3504 ,  G01N21/64 ,  G01N21/65

Abstract: The present invention relates to vacuum processing systems in which process gases are introduced in a process chamber and are exhausted through a vacuum processing system exhaust path. Deposits made by the exhausted gas are reduced or eliminated by introducing a reactive gas upstream of the device affected by deposits. The amount of introduced reactive gas is controlled by measuring gas phase concentrations of exhausted gas components upstream and downstream of the affected device, and, from those measurements, determining whether the components are being consumed in deposits on the affected device.

Abstract translation: 本发明涉及真空处理系统，其中处理气体被引入处理室并通过真空处理系统排气路径排出。 通过在受沉积物影响的装置上游引入反应性气体来减少或消除由排出的气体制成的沉积物。 引入的反应气体的量通过测量受影响的装置上游和下游的排气组分的气相浓度来控制，并且通过这些测量，确定组分是否在受影响的装置上的沉积物中被消耗。

公开(公告)号：US07638106B2

公开(公告)日：2009-12-29

申请号：US11409143

申请日：2006-04-21

Applicant: Christopher Mark Bailey ,  Michael Andrew Galtry ,  David Engerran ,  Andrew James Seeley ,  Geoffrey Young ,  Michael Alan Eric Wilders ,  Kenneth Allen Aitchison ,  Richard A. Hogle

Inventor： Christopher Mark Bailey ,  Michael Andrew Galtry ,  David Engerran ,  Andrew James Seeley ,  Geoffrey Young ,  Michael Alan Eric Wilders ,  Kenneth Allen Aitchison ,  Richard A. Hogle

IPC: B01D53/34 ,  B01D53/38

CPC classification number: B01D53/38 ,  B01D53/68 ,  B01D53/72 ,  B01D2251/104 ,  B01D2258/0216 ,  C23C16/4412 ,  C23C16/45525 ,  C23C16/45544

Abstract: A method is described of treating a gas stream exhausted from an atomic layer deposition (ALD) process chamber to which two or more gaseous precursors are alternately supplied. Between the process chamber and a vacuum pump used to draw the gas stream from the chamber, the gas stream is conveyed to a gas mixing chamber, to which a reactant is supplied for reacting with one of the gaseous precursors to form solid material. The gas stream is then conveyed to a cyclone separator to separate solid material from the gas stream. By deliberately reacting a non-reacted precursor to form solid material upstream from the pump, reaction within the pump of the non-reacted precursor and a second non-reacted precursor subsequently drawn from the chamber by the pump can be inhibited.

Abstract translation: 描述了一种处理从原子层沉积（ALD）处理室排出的气流的方法，其中交替地供给两种或更多种气态前体。 在处理室和用于从室中抽取气流的真空泵之间，气流被输送到气体混合室，供应反应物以与气体前体之一反应以形成固体材料。 然后将气流输送到旋风分离器以将固体材料与气流分离。 通过故意使未反应的前体反应以在泵的上游形成固体材料，可以抑制未反应的前体的泵中的反应和随后由泵从室从室抽出的第二未反应的前体。

公开(公告)号：US08382909B2

公开(公告)日：2013-02-26

申请号：US11285810

申请日：2005-11-23

Applicant: Kenneth Allen Aitchison

Inventor： Kenneth Allen Aitchison

IPC: B08B7/04 ,  B08B7/00

CPC classification number: C23C16/4412 ,  C23C16/52 ,  F04C23/001 ,  F04C25/02 ,  G01N21/35 ,  G01N21/3504 ,  G01N21/64 ,  G01N21/65

Abstract: The present invention relates to vacuum processing systems in which process gases are introduced in a process chamber and are exhausted through a vacuum processing system exhaust path. Deposits made by the exhausted gas are reduced or eliminated by introducing a reactive gas upstream of the device affected by deposits. The amount of introduced reactive gas is controlled by measuring gas phase concentrations of exhausted gas components upstream and downstream of the affected device, and, from those measurements, determining whether the components are being consumed in deposits on the affected device.

公开(公告)号：US5928426A

公开(公告)日：1999-07-27

申请号：US694353

申请日：1996-08-08

Applicant: Kenneth Allen Aitchison

Inventor： Kenneth Allen Aitchison

IPC: B01D53/68 ,  B01D53/00 ,  B01D53/32 ,  B01J15/00 ,  B01J19/08 ,  B01J19/12 ,  C23C16/44 ,  C23C16/511 ,  C23F4/00 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  C23C16/00

CPC classification number: C23C16/4412 ,  B01D53/005 ,  B01J15/005 ,  B01J19/087 ,  B01J19/126 ,  B01J2219/0894 ,  B01J2219/1227 ,  Y02C20/30

Abstract: A method and apparatus for removing gas species which can be deposited thermally from a semiconductor process exhaust gas is provided. To treat the exhaust gas, an exhaust gas reactor comprising an artificial substrate which is heated is used. The artificial substrate is a structure upon which high temperature chemical vapor deposition (HTCVD) reaction product is deposited. In particular, the HTCVD reaction product is deposited by contacting the exhaust gas with the heated artificial substrate.

Abstract translation: 提供了一种用于从半导体工艺废气中去除可以热沉积的气体种类的方法和装置。 为了处理废气，使用包括被加热的人造基板的排气反应器。 人造基材是沉积高温化学气相沉积（HTCVD）反应产物的结构。 特别地，通过使废气与加热的人造基底接触来沉积HTCVD反应产物。