SPECTRAL FILTER AND SPECTROMETRIC DEVICE
    1.
    发明申请

    公开(公告)号:US20180095207A1

    公开(公告)日:2018-04-05

    申请号:US15559908

    申请日:2016-03-28

    CPC classification number: G02B5/28 G01J3/26 G01J3/28 G01J3/36

    Abstract: A spectral filter (10) is provided with a long-pass filter (12) and a short-pass filter (13). The long-pass filter (12) has a film thickness gradient GL wherein film thickness increases monotonically in a single direction, and transmits light of a wavelength region longer than a cut-off wavelength WL. The short-pass filter (13) has a film thickness gradient GS wherein film thickness increases monotonically in a single direction, and transmits light of a wavelength region shorter than a cut-off wavelength WS. The long-pass filter (12) and the short-pass filter (13) are overlapped such that the single directions match each other. At the positions in the single directions, a transmittance peak is formed by the cut-off wavelength WL being shorter than the cut-off wavelength WS. The film thickness gradient GL is greater than the film thickness gradient GS.

    INK EJECTION DEVICE
    2.
    发明申请

    公开(公告)号:US20240384129A1

    公开(公告)日:2024-11-21

    申请号:US18688226

    申请日:2021-09-16

    Abstract: An ink ejection device includes a base material, a resin layer having at least one principal surface laminated to the base material to be in contact with the base material, and an ink flow path disposed such that an ink contacts and circulates in a part of the resin layer, wherein the resin layer contains carbon, oxygen, nitrogen and silicon, and at least one of the principal surfaces satisfies the following requirements (1) and (2). (1) the principal surface is in contact with the base material. (2) the relation of the atomic concentration (atm %) of nitrogen, oxygen and silicon in the principal surface of the resin layer and the interior thereof measured by X-ray photoelectron spectroscopy is represented by the principal surface O>the interior O, and the principal surface N>0, and the principal surface Si/the interior Si is 5 or more.

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