公开(公告)号：US20180311707A1

公开(公告)日：2018-11-01

申请号：US15950658

申请日：2018-04-11

Applicant: LAM RESEARCH CORPORATION

Inventor： Travis R. Taylor ,  Adam Bateman

IPC: B08B5/02 ,  B08B7/00

Abstract: A method for cleaning a chamber of a substrate processing system includes maintaining the chamber at a first predetermined pressure and, without a substrate present within the chamber, providing, from a fluid source via a nozzle assembly, a fluid, and injecting the fluid into the chamber via the nozzle assembly. The fluid source is maintained at a second predetermined pressure that is greater than the first predetermined pressure. Injecting the fluid into the chamber maintained at the first predetermined pressure causes the fluid to aerosolize into a mixture of gas and solid particles.

公开(公告)号：US10903065B2

公开(公告)日：2021-01-26

申请号：US15594118

申请日：2017-05-12

Applicant: Lam Research Corporation

Inventor： Travis R. Taylor ,  Adam Bateman ,  Todd A. Lopes ,  Sankaranarayanan Ravi ,  Silvia Aguilar ,  Derek Witkowicki

IPC: H01L21/02 ,  H01L21/67 ,  H01L21/687

Abstract: A chamber is formed to enclose a processing region. A passageway is configured to provide for entry of a substrate into the processing region and removal of the substrate from the processing region. A substrate support structure is disposed within the processing region and configured to support the substrate within the processing region. At least one gas input is configured to supply one or more gases to the processing region. At least one gas output is configured to exhaust gases from the processing region. A humidity control device is configured to control a relative humidity within the processing region. At least one heating device is disposed to provide temperature control of the substrate within the processing region. The processing region of the chamber is directly accessible from a substrate handling module configured to operate at atmospheric pressure.

公开(公告)号：US20180330942A1

公开(公告)日：2018-11-15

申请号：US15594118

申请日：2017-05-12

Applicant: Lam Research Corporation

Inventor： Travis R. Taylor ,  Adam Bateman ,  Todd A. Lopes ,  Sankaranarayanan Ravi ,  Silvia Aguilar ,  Derek Witkowicki

IPC: H01L21/02 ,  H01L21/67 ,  B08B5/02

CPC classification number: H01L21/02057 ,  B08B5/02 ,  H01L21/67023

Abstract: A chamber is formed to enclose a processing region. A passageway is configured to provide for entry of a substrate into the processing region and removal of the substrate from the processing region. A substrate support structure is disposed within the processing region and configured to support the substrate within the processing region. At least one gas input is configured to supply one or more gases to the processing region. At least one gas output is configured to exhaust gases from the processing region. A humidity control device is configured to control a relative humidity within the processing region. At least one heating device is disposed to provide temperature control of the substrate within the processing region. The processing region of the chamber is directly accessible from a substrate handling module configured to operate at atmospheric pressure.