公开(公告)号：US09460915B2

公开(公告)日：2016-10-04

申请号：US14485142

申请日：2014-09-12

Applicant: LAM RESEARCH CORPORATION

Inventor： Sesha Varadarajan ,  Shankar Swaminathan ,  Saangrut Sangplung ,  Frank Pasquale ,  Ted Minshall ,  Adrien LaVoie ,  Mohamed Sabri ,  Cody Barnett

IPC: H01L21/31 ,  H01L21/02 ,  C23C16/455 ,  C23C16/458 ,  C23C16/505 ,  C23C16/52

CPC classification number: H01L21/0228 ,  C23C16/45525 ,  C23C16/45544 ,  C23C16/45597 ,  C23C16/4585 ,  C23C16/505 ,  C23C16/52 ,  H01J37/00 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02186 ,  H01L21/02274

Abstract: A substrate processing system for depositing film on a substrate includes a processing chamber defining a reaction volume and including a substrate support for supporting the substrate. A gas delivery system is configured to introduce process gas into the reaction volume of the processing chamber. A plasma generator is configured to selectively generate RF plasma in the reaction volume. A clamping system is configured to clamp the substrate to the substrate support during deposition of the film. A backside purging system is configured to supply a reactant gas to a backside edge of the substrate to purge the backside edge during the deposition of the film.

Abstract translation: 用于在衬底上沉积膜的衬底处理系统包括限定反应体积并包括用于支撑衬底的衬底支撑件的处理室。 气体输送系统被配置为将处理气体引入到处理室的反应体积中。 等离子体发生器被配置为在反应体积中选择性地产生RF等离子体。 夹持系统被配置为在膜的沉积期间将衬底夹持到衬底支撑件。 背面清洗系统被配置为在膜的沉积期间将反应气体供应到衬底的后侧边缘以净化后侧边缘。

公开(公告)号：US09852901B2

公开(公告)日：2017-12-26

申请号：US15255337

申请日：2016-09-02

Applicant: LAM RESEARCH CORPORATION

Inventor： Sesha Varadarajan ,  Shankar Swaminathan ,  Saangrut Sangplung ,  Frank Pasquale ,  Ted Minshall ,  Adrien Lavoie ,  Mohamed Sabri ,  Cody Barnett

IPC: H01L21/31 ,  H01L21/02 ,  C23C16/455 ,  C23C16/458 ,  C23C16/505 ,  C23C16/52

CPC classification number: H01L21/0228 ,  C23C16/45525 ,  C23C16/45544 ,  C23C16/45597 ,  C23C16/4585 ,  C23C16/505 ,  C23C16/52 ,  H01J37/00 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02186 ,  H01L21/02274

Abstract: A substrate processing system for depositing film on a substrate includes a processing chamber defining a reaction volume and including a substrate support for supporting the substrate. A gas delivery system is configured to introduce process gas into the reaction volume of the processing chamber. A plasma generator is configured to selectively generate RF plasma in the reaction volume. A clamping system is configured to clamp the substrate to the substrate support during deposition of the film. A backside purging system is configured to supply a reactant gas to a backside edge of the substrate to purge the backside edge during the deposition of the film.

公开(公告)号：US20160056032A1

公开(公告)日：2016-02-25

申请号：US14466925

申请日：2014-08-22

Applicant: Lam Research Corporation

Inventor： Chloe Baldasseroni ,  Adrien LaVoie ,  Hu Kang ,  Jun Qian ,  Purushottam Kumar ,  Andrew Duvall ,  Cody Barnett ,  Mohamed Sabri ,  Ramesh Chandrasekharan ,  Karl F. Leeser ,  David C. Smith ,  Seshasayee Varadarajan ,  Edmund B. Minshall

IPC: H01L21/02 ,  C23C16/46 ,  C23C16/52 ,  C23C16/455 ,  C23C16/458

CPC classification number: H01L21/0228 ,  C23C16/45527 ,  C23C16/45544 ,  C23C16/45565 ,  C23C16/45572 ,  C23C16/4586 ,  C23C16/46 ,  C23C16/463 ,  C23C16/52 ,  H01L21/02274

Abstract: Disclosed are methods of depositing films of material on semiconductor substrates. The methods may include flowing a film precursor into a processing chamber through a showerhead substantially maintained at a first temperature, and adsorbing the film precursor onto a substrate held on a substrate holder such that the precursor forms an adsorption-limited layer while the substrate holder is substantially maintained at a second temperature. The first temperature may be at least about 10° C. above the second temperature, or the first temperature may be at or below the second temperature. The methods may further include removing at least some unadsorbed film precursor from the volume surrounding the adsorbed film precursor, and thereafter reacting adsorbed film precursor to form a film layer. Also disclosed herein are apparatuses having a processing chamber, a substrate holder, a showerhead, and one or more controllers for operating the apparatus to employ the foregoing film deposition techniques.

Abstract translation: 公开了在半导体衬底上沉积材料的方法。 所述方法可以包括通过基本上保持在第一温度的喷头将膜前体流入处理室，并且将膜前体吸附到保持在基板保持器上的基板上，使得前体形成吸附限制层，同时基板保持器为 基本保持在第二温度。 第一温度可以高于第二温度至少约10℃，或第一温度可处于或低于第二温度。 所述方法还可以包括从包围吸附膜前体的体积中去除至少一些未吸附的膜前体，然后使吸附膜前体反应形成膜层。 本文还公开了具有处理室，衬底保持器，喷头和用于操作该装置以使用上述成膜技术的一个或多个控制器的装置。

公开(公告)号：US20250154644A1

公开(公告)日：2025-05-15

申请号：US18838576

申请日：2023-02-14

Applicant: Lam Research Corporation

Inventor： Eli Jeon ,  Douglas Walter Agnew ,  Shiva Sharan Bhandari ,  Ian John Curtin ,  Joseph R. Abel ,  Jason Alexander Varnell ,  Cody Barnett ,  Christopher Nicholas Iadanza ,  Dustin Zachary Austin

IPC: C23C16/04 ,  C23C16/40 ,  C23C16/455 ,  H01J37/32 ,  H01L21/02

Abstract: Methods of filling a gap with a dielectric material including using an inhibition plasma during deposition. The inhibition plasma increases a nucleation barrier of the deposited film. The inhibition plasma selectively interacts near the top of the feature, inhibiting deposition at the top of the feature compared to the bottom of the feature, enhancing bottom-up fill. A process chamber may have multiple pressure switches to enable a process after deposition at a higher pressure than the pressure during deposition.

公开(公告)号：USD1073758S1

公开(公告)日：2025-05-06

申请号：US29856399

申请日：2022-10-13

Applicant: LAM RESEARCH CORPORATION

Designer： Karthik Adappa Sathish ,  Cody Barnett ,  Mitali Mrigendra Basargi ,  Ravi Kumar

公开(公告)号：US20160079057A1

公开(公告)日：2016-03-17

申请号：US14485142

申请日：2014-09-12

Applicant: LAM RESEARCH CORPORATION

Inventor： Sesha Varadarajan ,  Shankar Swaminathan ,  Saangrut Sangplung ,  Frank Pasquale ,  Ted Minshall ,  Adrien LaVoie ,  Mohamed Sabri ,  Cody Barnett

IPC: H01L21/02 ,  C23C16/52 ,  C23C16/505 ,  C23C16/455 ,  C23C16/458

CPC classification number: H01L21/0228 ,  C23C16/45525 ,  C23C16/45544 ,  C23C16/45597 ,  C23C16/4585 ,  C23C16/505 ,  C23C16/52 ,  H01J37/00 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02186 ,  H01L21/02274

Abstract: A substrate processing system for depositing film on a substrate includes a processing chamber defining a reaction volume and including a substrate support for supporting the substrate. A gas delivery system is configured to introduce process gas into the reaction volume of the processing chamber. A plasma generator is configured to selectively generate RF plasma in the reaction volume. A clamping system is configured to clamp the substrate to the substrate support during deposition of the film. A backside purging system is configured to supply a reactant gas to a backside edge of the substrate to purge the backside edge during the deposition of the film.

Abstract translation: 用于在衬底上沉积膜的衬底处理系统包括限定反应体积并包括用于支撑衬底的衬底支撑件的处理室。 气体输送系统被配置为将处理气体引入到处理室的反应体积中。 等离子体发生器被配置为在反应体积中选择性地产生RF等离子体。 夹持系统被配置为在膜的沉积期间将衬底夹持到衬底支撑件。 背面清洗系统被配置为在膜的沉积期间将反应气体供应到衬底的后侧边缘以净化后侧边缘。