公开(公告)号：US11062897B2

公开(公告)日：2021-07-13

申请号：US15640345

申请日：2017-06-30

Applicant: Lam Research Corporation

Inventor： Yongsik Yu ,  David Wingto Cheung ,  Kirk J. Ostrowski ,  Nikkon Ghosh ,  Karthik S. Colinjivadi ,  Samantha Tan ,  Nathan Musselwhite ,  Mark Naoshi Kawaguchi

IPC: H01L21/02 ,  H01L21/67 ,  H01J37/32 ,  H01L21/677 ,  H01L21/311 ,  H01L21/033 ,  C01B21/083 ,  C01B7/07

Abstract: Methods and apparatuses for etching metal-doped carbon-containing materials are provided herein. Etching methods include using a mixture of an etching gas suitable for etching the carbon component of the metal-doped carbon-containing material and an additive gas suitable for etching the metal component of the metal-doped carbon-containing material and igniting a plasma to selectively remove metal-doped carbon-containing materials relative to underlayers such as silicon oxide, silicon nitride, and silicon, at high temperatures. Apparatuses suitable for etching metal-doped carbon-containing materials are equipped with a high temperature movable pedestal, a plasma source, and a showerhead between a plasma generating region and the substrate.

公开(公告)号：US20240387258A1

公开(公告)日：2024-11-21

申请号：US18785926

申请日：2024-07-26

Applicant: Lam Research Corporation

Inventor： Hui-Jung Wu ,  Bart J. Van Schravendijk ,  Mark Naoshi Kawaguchi ,  Gereng Gunawan ,  Jay E. Uglow ,  Nagraj Shankar ,  Gowri Channa Kamarthy ,  Kevin M. McLaughlin ,  Ananda K. Banerji ,  Jialing Yang ,  John Hoang ,  Aaron Lynn Routzahn ,  Nathan Musselwhite ,  Meihua Shen ,  Thorsten Bernd Lill ,  Hao Chi ,  Nicholas Dominic Altieri

IPC: H01L21/768 ,  H01L21/02 ,  H01L21/311 ,  H01L29/788 ,  H10B41/20 ,  H10B41/35

Abstract: Methods for forming patterned multi-layer stacks including a metal-containing layer are provided herein. Methods involve using silicon-containing non-metal materials in a multi-layer stack including one sacrificial layer to be later removed and replaced with metal while maintaining etch contrast to pattern the multi-layer stack and selectively remove the sacrificial layer prior to depositing metal. Methods involve using silicon oxycarbide in lieu of silicon nitride, and a sacrificial non-metal material in lieu of a metal-containing layer, to fabricate the multi-layer stack, pattern the multi-layer stack, selectively remove the sacrificial non-metal material to leave spaces in the stack, and deposit metal-containing material into the spaces. Sacrificial non-metal materials include silicon nitride and doped polysilicon, such as boron-doped silicon.

公开(公告)号：US11488831B2

公开(公告)日：2022-11-01

申请号：US16973489

申请日：2019-06-07

Applicant: LAM RESEARCH CORPORATION

Inventor： Ji Zhu ,  Mark Kawaguchi ,  Nathan Musselwhite

IPC: H01L21/306 ,  H01L21/02

Abstract: A method for treating a substrate includes arranging a substrate in a processing chamber. At least one of a vaporized solvent and a gas mixture including the solvent is supplied to the processing chamber to form a conformal liquid layer of the solvent on exposed surfaces of the substrate. The at least one of the vaporized solvent and the gas mixture is removed from the processing chamber. A reactive gas including a halogen species is supplied to the processing chamber. The conformal liquid layer adsorbs the reactive gas to form a reactive liquid layer that etches the exposed surfaces of the substrate.

公开(公告)号：US12080592B2

公开(公告)日：2024-09-03

申请号：US17250835

申请日：2019-09-10

Applicant: Lam Research Corporation

Inventor： Hui-Jung Wu ,  Bart J. van Schravendijk ,  Mark Naoshi Kawaguchi ,  Gereng Gunawan ,  Jay E. Uglow ,  Nagraj Shankar ,  Gowri Channa Kamarthy ,  Kevin M. McLaughlin ,  Ananda K. Banerji ,  Jialing Yang ,  John Hoang ,  Aaron Lynn Routzahn ,  Nathan Musselwhite ,  Meihua Shen ,  Thorsten Bernd Lill ,  Hao Chi ,  Nicholas Dominic Altieri

IPC: H01L21/336 ,  H01L21/02 ,  H01L21/311 ,  H01L21/768 ,  H01L29/788 ,  H10B41/20 ,  H10B41/35

CPC classification number: H01L21/76846 ,  H01L21/0217 ,  H01L21/02263 ,  H01L21/31105 ,  H01L21/76816 ,  H01L29/7889 ,  H10B41/20 ,  H10B41/35

Abstract: Methods for forming patterned multi-layer stacks including a metal-containing layer are provided herein. Methods involve using silicon-containing non-metal materials in a multi-layer stack including one sacrificial layer to be later removed and replaced with metal while maintaining etch contrast to pattern the multi-layer stack and selectively remove the sacrificial layer prior to depositing metal. Methods involve using silicon oxycarbide in lieu of silicon nitride, and a sacrificial non-metal material in lieu of a metal-containing layer, to fabricate the multi-layer stack, pattern the multi-layer stack, selectively remove the sacrificial non-metal material to leave spaces in the stack, and deposit metal-containing material into the spaces. Sacrificial non-metal materials include silicon nitride and doped polysilicon, such as boron-doped silicon.

公开(公告)号：US12040193B2

公开(公告)日：2024-07-16

申请号：US17963615

申请日：2022-10-11

Applicant: LAM RESEARCH CORPORATION

Inventor： Ji Zhu ,  Mark Kawaguchi ,  Nathan Musselwhite

IPC: H01L21/306 ,  H01L21/02

CPC classification number: H01L21/30604 ,  H01L21/02057

Abstract: A method for treating a substrate includes arranging a substrate in a processing chamber. At least one of a vaporized solvent and a gas mixture including the solvent is supplied to the processing chamber to form a conformal liquid layer of the solvent on exposed surfaces of the substrate. The at least one of the vaporized solvent and the gas mixture is removed from the processing chamber. A reactive gas including a halogen species is supplied to the processing chamber. The conformal liquid layer adsorbs the reactive gas to form a reactive liquid layer that etches the exposed surfaces of the substrate.

公开(公告)号：US20230268189A1

公开(公告)日：2023-08-24

申请号：US18004051

申请日：2022-01-21

Applicant: Lam Research Corporation

Inventor： Nathan Musselwhite ,  Ji Zhu ,  Gerome Michel Dominique Melaet ,  Mark Naoshi Kawaguchi

IPC: H01L21/311 ,  H01L21/67 ,  H01L21/321

CPC classification number: H01L21/31116 ,  H01L21/67069 ,  H01L21/32105

Abstract: Methods and apparatuses for precise trimming of silicon-containing materials are provided. Methods involve oxidizing silicon-containing materials and thermally removing the oxidized silicon-containing materials at particular temperatures for a self-limiting etch process. Methods also involve a surface reaction limited process using a halogen source and modulated temperature and exposure duration to etch small amounts of silicon-containing materials. Apparatuses are capable of flowing multiple oxidizers at particular temperature ranges to precisely etch substrates.

公开(公告)号：US20180358220A1

公开(公告)日：2018-12-13

申请号：US15640345

申请日：2017-06-30

Applicant: Lam Research Corporation

Inventor： Yongsik Yu ,  David Wingto Cheung ,  Kirk J. Ostrowski ,  Nikkon Ghosh ,  Karthik S. Colinjivadi ,  Samantha Tan ,  Nathan Musselwhite ,  Mark Naoshi Kawaguchi

IPC: H01L21/02

CPC classification number: H01L21/02019 ,  C01B7/0743 ,  C01B21/0835 ,  H01L21/02115

Abstract: Methods and apparatuses for etching metal-doped carbon-containing materials are provided herein. Etching methods include using a mixture of an etching gas suitable for etching the carbon component of the metal-doped carbon-containing material and an additive gas suitable for etching the metal component of the metal-doped carbon-containing material and igniting a plasma to selectively remove metal-doped carbon-containing materials relative to underlayers such as silicon oxide, silicon nitride, and silicon, at high temperatures. Apparatuses suitable for etching metal-doped carbon-containing materials are equipped with a high temperature movable pedestal, a plasma source, and a showerhead between a plasma generating region and the substrate.