公开(公告)号：US11065654B2

公开(公告)日：2021-07-20

申请号：US16017445

申请日：2018-06-25

Applicant: LAM RESEARCH CORPORATION

Inventor： Mark Kawaguchi ,  Gregory Blachut

IPC: H01L21/02 ,  B08B7/00 ,  H01L21/677 ,  H01L21/66

Abstract: A method for cleaning a substrate includes supplying a vapor to a processing chamber to grow a polymer film on a substrate in the processing chamber; adding a solution to the polymer film on the substrate to create a viscoelastic fluid on the substrate; and removing the viscoelastic fluid to remove particle contaminants from the substrate.

公开(公告)号：US20180269070A1

公开(公告)日：2018-09-20

申请号：US15458292

申请日：2017-03-14

Applicant: Lam Research Corporation

Inventor： Kwame Eason ,  Dengliang Yang ,  Pilyeon Park ,  Faisal Yaqoob ,  Joon Hong Park ,  Mark Kawaguchi ,  Ivelin Angelov ,  Ji Zhu ,  Hsiao-Wei Chang

IPC: H01L21/311 ,  H01L21/67 ,  H01L21/8234 ,  H01J37/32

CPC classification number: H01L21/31116 ,  H01J37/3211 ,  H01J37/32449 ,  H01J37/32798 ,  H01J2237/002 ,  H01J2237/006 ,  H01J2237/334 ,  H01L21/823431

Abstract: A substrate processing system for selectively etching a layer on a substrate includes an upper chamber region, an inductive coil arranged around the upper chamber region and a lower chamber region including a substrate support to support a substrate. A gas distribution device is arranged between the upper chamber region and the lower chamber region and includes a plate with a plurality of holes. A cooling plenum cools the gas distribution device and a purge gas plenum directs purge gas into the lower chamber. A surface to volume ratio of the holes is greater than or equal to 4. A controller selectively supplies an etch gas mixture to the upper chamber and a purge gas to the purge gas plenum and strikes plasma in the upper chamber to selectively etch a layer of the substrate relative to at least one other exposed layer of the substrate.

公开(公告)号：US20230084901A1

公开(公告)日：2023-03-16

申请号：US17948350

申请日：2022-09-20

Applicant: Lam Research Corporation

Inventor： Kwame EASON ,  Dengliang Yang ,  Pilyeon Park ,  Faisal Yaqoob ,  Joon Hong Park ,  Mark Kawaguchi ,  Ji Zhu ,  Ivelin Angelov ,  Hsiao-Eei Chang

IPC: H01J37/32 ,  H01L21/311 ,  H01L21/8234

Abstract: A substrate processing system for selectively etching a layer on a substrate includes an upper chamber region, an inductive coil arranged around the upper chamber region and a lower chamber region including a substrate support to support a substrate. A gas distribution device is arranged between the upper chamber region and the lower chamber region and includes a plate with a plurality of holes. A cooling plenum cools the gas distribution device and a purge gas plenum directs purge gas into the lower chamber. A surface to volume ratio of the holes is greater than or equal to 4. A controller selectively supplies an etch gas mixture to the upper chamber and a purge gas to the purge gas plenum and strikes plasma in the upper chamber to selectively etch a layer of the substrate relative to at least one other exposed layer of the substrate.

公开(公告)号：US11469079B2

公开(公告)日：2022-10-11

申请号：US15458292

申请日：2017-03-14

Applicant: Lam Research Corporation

Inventor： Kwame Eason ,  Dengliang Yang ,  Pilyeon Park ,  Faisal Yaqoob ,  Joon Hong Park ,  Mark Kawaguchi ,  Ivelin Angelov ,  Ji Zhu ,  Hsiao-Wei Chang

IPC: H01J37/32 ,  H01L21/311 ,  H01L21/8234 ,  H01L29/66

Abstract: A substrate processing system for selectively etching a layer on a substrate includes an upper chamber region, an inductive coil arranged around the upper chamber region and a lower chamber region including a substrate support to support a substrate. A gas distribution device is arranged between the upper chamber region and the lower chamber region and includes a plate with a plurality of holes. A cooling plenum cools the gas distribution device and a purge gas plenum directs purge gas into the lower chamber. A surface to volume ratio of the holes is greater than or equal to 4. A controller selectively supplies an etch gas mixture to the upper chamber and a purge gas to the purge gas plenum and strikes plasma in the upper chamber to selectively etch a layer of the substrate relative to at least one other exposed layer of the substrate.

公开(公告)号：US12040193B2

公开(公告)日：2024-07-16

申请号：US17963615

申请日：2022-10-11

Applicant: LAM RESEARCH CORPORATION

Inventor： Ji Zhu ,  Mark Kawaguchi ,  Nathan Musselwhite

IPC: H01L21/306 ,  H01L21/02

CPC classification number: H01L21/30604 ,  H01L21/02057

Abstract: A method for treating a substrate includes arranging a substrate in a processing chamber. At least one of a vaporized solvent and a gas mixture including the solvent is supplied to the processing chamber to form a conformal liquid layer of the solvent on exposed surfaces of the substrate. The at least one of the vaporized solvent and the gas mixture is removed from the processing chamber. A reactive gas including a halogen species is supplied to the processing chamber. The conformal liquid layer adsorbs the reactive gas to form a reactive liquid layer that etches the exposed surfaces of the substrate.

公开(公告)号：US11967486B2

公开(公告)日：2024-04-23

申请号：US17424381

申请日：2020-01-21

Applicant: LAM RESEARCH CORPORATION

Inventor： Andrew Stratton Bravo ,  Chih-Hsun Hsu ,  Serge Kosche ,  Stephen Whitten ,  Shih-Chung Kon ,  Mark Kawaguchi ,  Himanshu Chokshi ,  Dan Zhang ,  Gnanamani Amburose

IPC: H01J37/32

CPC classification number: H01J37/32422 ,  H01J37/321 ,  H01J37/32357 ,  H01J37/32467 ,  H01J37/32174

Abstract: A substrate processing system includes an upper chamber and a gas delivery system to supply a gas mixture to the upper chamber. An RF generator generates plasma in the upper chamber. A lower chamber includes a substrate support. A dual ion filter is arranged between the upper chamber and the lower chamber. The dual ion filter includes an upper filter including a first plurality of through holes configured to filter ions. A lower filter includes a second plurality of through holes configured to control plasma uniformity.

公开(公告)号：US11488831B2

公开(公告)日：2022-11-01

申请号：US16973489

申请日：2019-06-07

Applicant: LAM RESEARCH CORPORATION

Inventor： Ji Zhu ,  Mark Kawaguchi ,  Nathan Musselwhite

IPC: H01L21/306 ,  H01L21/02

Abstract: A method for treating a substrate includes arranging a substrate in a processing chamber. At least one of a vaporized solvent and a gas mixture including the solvent is supplied to the processing chamber to form a conformal liquid layer of the solvent on exposed surfaces of the substrate. The at least one of the vaporized solvent and the gas mixture is removed from the processing chamber. A reactive gas including a halogen species is supplied to the processing chamber. The conformal liquid layer adsorbs the reactive gas to form a reactive liquid layer that etches the exposed surfaces of the substrate.

公开(公告)号：US20190051540A1

公开(公告)日：2019-02-14

申请号：US15671926

申请日：2017-08-08

Applicant: Lam Research Corporation

Inventor： Ji Zhu ,  Jatinder Kumar ,  Mark Kawaguchi ,  lvelin Angelov ,  Serge Kosche

IPC: H01L21/67 ,  H01L21/02

Abstract: A substrate processing system to remove residual halogen species from a substrate includes a processing chamber and a substrate support arranged in the processing chamber to support a substrate. The substrate includes residual halogen species. A heater heats the substrate to a temperature in a predetermined temperature range from 100° C. to 700° C. during a processing period. A chamber pressure controller controls pressure inside the processing chamber in a predetermined pressure range greater than 10 Torr and less than 800 Torr during the processing period. A vapor generator supplies water vapor at least one of in the processing chamber or to the processing chamber during the processing period.