公开(公告)号：US20250085625A1

公开(公告)日：2025-03-13

申请号：US18720475

申请日：2021-12-22

Applicant: LEIA Inc.

Inventor： Emeline Soichi ,  Sonny Vo ,  Zhen Peng ,  Fei Gao

IPC: G03F7/00 ,  B82Y40/00

Abstract: A nanoimprint lithography mold, nanoimprint lithography tiling system, and method of dicing a nanoimprint lithography substrate employ a nanoimprint lithography mold having a precision edge and an undercut sidewall. The precision edge has nanoscale roughness and is adjacent to a top surface of the nanoimprint lithography mold at a predetermined distance from a feature of the nanoimprint lithography mold. The undercut sidewall extends from the precision edge to a bottom surface of the nanoimprint lithography mold. The undercut sidewall has a surface that is angled away from the precision edge and toward a center of the nanoimprint lithography mold. The precision edge and the undercut sidewall define a side of the nanoimprint lithography mold that can be abutted with corresponding sides of one or more other nanoimprint lithography molds.

公开(公告)号：US20210086407A1

公开(公告)日：2021-03-25

申请号：US17112941

申请日：2020-12-04

Applicant: LEIA INC.

Inventor： Zhen Peng ,  Sonny Vo ,  Emeline Soichi

IPC: B29C33/38 ,  B29C33/42 ,  B29C33/56 ,  G03F7/00

Abstract: A method of forming a large-area nanoimprint mold master is provided. The method includes positioning a plurality of sub-master tiles on a rigid planar substrate. Each sub-master tile of the sub-master tile plurality has a nanoscale pattern and represents a subsection of the large-area nanoimprint mold master. The method further includes adhering the plurality of sub-master tiles to the rigid planar substrate. The positioning determines a distance between a nanoscale feature of the nanoscale pattern on each sub-master tile of a pair of adjacent sub-master tiles. The distance has microscale positioning tolerance. Also provided are a large-area nanoimprint mold master and a method of large-area nanoimprint lithography.