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公开(公告)号:US20250053081A1
公开(公告)日:2025-02-13
申请号:US18720487
申请日:2021-12-20
Applicant: LEIA Inc.
Inventor: Kevin Cao , Sonny Vo , Qing Yang , Felix Mbuga
Abstract: A method of imprint lithography mold defect mitigation and a masked imprint lithography mold employ a masking layer to selectively cover a surface defect. The method of imprint lithography mold defect mitigation includes depositing a masking layer on a surface of an imprint lithography mold to selectively cover a defect on the surface and form a masked imprint lithography mold. The method of imprint lithography mold defect mitigation further includes forming a negative imprint lithography mold from the masked imprint lithography mold. The masked imprint lithography mold includes an imprint lithography mold having a surface with a defect and a patterned masking layer affixed to the surface and configured to selectively cover the defect. The patterned masking layer that selectively covers the defect is configured to mitigate an effect of the defect when the masked imprint lithography mold is employed in imprint lithography.
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公开(公告)号:US20210086407A1
公开(公告)日:2021-03-25
申请号:US17112941
申请日:2020-12-04
Applicant: LEIA INC.
Inventor: Zhen Peng , Sonny Vo , Emeline Soichi
Abstract: A method of forming a large-area nanoimprint mold master is provided. The method includes positioning a plurality of sub-master tiles on a rigid planar substrate. Each sub-master tile of the sub-master tile plurality has a nanoscale pattern and represents a subsection of the large-area nanoimprint mold master. The method further includes adhering the plurality of sub-master tiles to the rigid planar substrate. The positioning determines a distance between a nanoscale feature of the nanoscale pattern on each sub-master tile of a pair of adjacent sub-master tiles. The distance has microscale positioning tolerance. Also provided are a large-area nanoimprint mold master and a method of large-area nanoimprint lithography.
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公开(公告)号:US20250085625A1
公开(公告)日:2025-03-13
申请号:US18720475
申请日:2021-12-22
Applicant: LEIA Inc.
Inventor: Emeline Soichi , Sonny Vo , Zhen Peng , Fei Gao
Abstract: A nanoimprint lithography mold, nanoimprint lithography tiling system, and method of dicing a nanoimprint lithography substrate employ a nanoimprint lithography mold having a precision edge and an undercut sidewall. The precision edge has nanoscale roughness and is adjacent to a top surface of the nanoimprint lithography mold at a predetermined distance from a feature of the nanoimprint lithography mold. The undercut sidewall extends from the precision edge to a bottom surface of the nanoimprint lithography mold. The undercut sidewall has a surface that is angled away from the precision edge and toward a center of the nanoimprint lithography mold. The precision edge and the undercut sidewall define a side of the nanoimprint lithography mold that can be abutted with corresponding sides of one or more other nanoimprint lithography molds.
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公开(公告)号:US10969531B2
公开(公告)日:2021-04-06
申请号:US16714772
申请日:2019-12-15
Applicant: LEIA INC.
Inventor: David A. Fattal , Xuejian Li , Ming Ma , Sonny Vo
IPC: F21V8/00
Abstract: A multiview backlight and a multiview display employ a microprism multibeam element to emit a plurality of directional light beams having principal angular directions corresponding to view directions of the multiview display. The multiview backlight includes a light guide and the microprism multibeam element extending from a surface of the light guide. The microprism multibeam element has an input aperture configured to receive a portion of guided light and an output aperture configured to emit the plurality of directional light beams. The microprism multibeam element includes a microprism having an inclined sidewall configured to reflect the received guided light portion and provide the plurality of directional light beams. The multiview display includes the multiview backlight and an array of multiview pixels configured to provide different views of the multiview display from the plurality of directional light beams.
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