公开(公告)号：US11073738B2

公开(公告)日：2021-07-27

申请号：US16206749

申请日：2018-11-30

Applicant: Luxtera LLC.

Inventor： Attila Mekis ,  Subal Sahni ,  Yannick De Koninck ,  Gianlorenzo Masini ,  Faezeh Gholami

IPC: G02B6/02 ,  G02B5/18 ,  G02F1/21 ,  G02F1/225 ,  G02F1/025

Abstract: Methods and systems for a vertical junction high-speed phase modulator are disclosed and may include a semiconductor device having a semiconductor waveguide including a slab section, a rib section extending above the slab section, and raised ridges extending above the slab section on both sides of the rib section. The semiconductor device has a vertical pn junction with p-doped material and n-doped material arranged vertically with respect to each other in the rib and slab sections. The rib section may be either fully n-doped or p-doped in each cross-section along the semiconductor waveguide. Electrical connection to the p-doped and n-doped material may be enabled by forming contacts on the raised ridges, and electrical connection may be provided to the rib section from one of the contacts via periodically arranged sections of the semiconductor waveguide, where a cross-section of both the rib section and the slab section in the periodically arranged sections may be fully n-doped or fully p-doped.

公开(公告)号：US11796888B2

公开(公告)日：2023-10-24

申请号：US17443420

申请日：2021-07-26

Applicant: LUXTERA LLC

Inventor： Attila Mekis ,  Subal Sahni ,  Yannick De Koninck ,  Gianlorenzo Masini ,  Faezeh Gholami

IPC: G02B1/00 ,  G02F1/225 ,  G02F1/025 ,  G02F1/25 ,  G02F1/21

CPC classification number: G02F1/2257 ,  G02F1/025 ,  G02F1/212 ,  G02F2201/063 ,  G02F2201/12

Abstract: Methods and systems for a vertical junction high-speed phase modulator are disclosed and may include a semiconductor device having a semiconductor waveguide including a slab section, a rib section extending above the slab section, and raised ridges extending above the slab section on both sides of the rib section. The semiconductor device has a vertical pn junction with p-doped material and n-doped material arranged vertically with respect to each other in the rib and slab sections. The rib section may be either fully n-doped or p-doped in each cross-section along the semiconductor waveguide. Electrical connection to the p-doped and n-doped material may be enabled by forming contacts on the raised ridges, and electrical connection may be provided to the rib section from one of the contacts via periodically arranged sections of the semiconductor waveguide, where a cross-section of both the rib section and the slab section in the periodically arranged sections may be fully n-doped or fully p-doped.

公开(公告)号：US20220019121A1

公开(公告)日：2022-01-20

申请号：US17443420

申请日：2021-07-26

Applicant: LUXTERA LLC

Inventor： Attila Mekis ,  Subal Sahni ,  Yannick De Koninck ,  Gianlorenzo Masini ,  Faezeh Gholami

IPC: G02F1/225 ,  G02F1/025

Abstract: Methods and systems for a vertical junction high-speed phase modulator are disclosed and may include a semiconductor device having a semiconductor waveguide including a slab section, a rib section extending above the slab section, and raised ridges extending above the slab section on both sides of the rib section. The semiconductor device has a vertical pn junction with p-doped material and n-doped material arranged vertically with respect to each other in the rib and slab sections. The rib section may be either fully n-doped or p-doped in each cross-section along the semiconductor waveguide. Electrical connection to the p-doped and n-doped material may be enabled by forming contacts on the raised ridges, and electrical connection may be provided to the rib section from one of the contacts via periodically arranged sections of the semiconductor waveguide, where a cross-section of both the rib section and the slab section in the periodically arranged sections may be fully n-doped or fully p-doped.