公开(公告)号：US09287110B2

公开(公告)日：2016-03-15

申请号：US13918616

申请日：2013-06-14

Applicant: Lam Research Corporation

Inventor： William Thie ,  John M. Boyd ,  Fritz C. Redeker ,  Yezdi Dordi ,  John Parks ,  Tiruchirapalli Arunagiri ,  Aleksander Owczarz ,  Todd Balisky ,  Clint Thomas ,  Jacob Wylie ,  Alan M. Schoepp

IPC: B05C11/00 ,  B05D1/28 ,  H01L21/02 ,  C23C18/16 ,  H01L21/67

CPC classification number: H01L21/02104 ,  C23C18/1619 ,  H01L21/67005 ,  H01L21/6715

Abstract: A semiconductor wafer electroless plating apparatus includes a platen and a fluid bowl. The platen has a top surface defined to support a wafer, and an outer surface extending downward from a periphery of the top surface to a lower surface of the platen. The fluid bowl has an inner volume defined by an interior surface so as to receive the platen, and wafer to be supported thereon, within the inner volume. A seal is disposed around the interior surface of the fluid bowl so as to form a liquid tight barrier when engaged between the interior surface of the fluid bowl and the outer surface of the platen. A number of fluid dispense nozzles are positioned to dispense electroplating solution within the fluid bowl above the seal so as to rise up and flow over the platen, thereby flowing over the wafer when present on the platen.

公开(公告)号：US20150040947A1

公开(公告)日：2015-02-12

申请号：US13961741

申请日：2013-08-07

Applicant: Lam Research Corporation

Inventor： Erik M. Freer ,  John M. deLarios ,  Katrina Mikhaylichenko ,  Michael Ravkin ,  Mikhail Korolik ,  Fred C. Redeker ,  Clint Thomas ,  John Parks

IPC: H01L21/67 ,  H01L21/02

CPC classification number: H01L21/67051 ,  H01L21/02057

Abstract: An apparatus for cleaning a substrate is disclosed. The apparatus having a first head unit and a second head unit. The first head unit is positioned proximate to the surface of the substrate and has a first row of channels defined within configured to supply a foam to the surface of the substrate. The second head unit is positioned substantially adjacent to the first head unit and proximate to the surface of the substrate. A second and a third row of channels are defined within the second head unit. The second row of channels is configured to supply a fluid to the surface of the substrate. The third row of channels is configured to apply a vacuum to the surface of the substrate.

Abstract translation: 公开了一种用于清洁衬底的设备。 该装置具有第一头单元和第二头单元。 第一头单元定位成接近基底的表面，并且具有限定在构造成向基底的表面提供泡沫的第一排通道。 第二头单元被定位成基本上与第一头单元相邻并且靠近衬底的表面。 第二和第三行通道被限定在第二头单元内。 第二排通道被配置成向衬底的表面提供流体。 第三排通道被配置为向基板的表面施加真空。

公开(公告)号：US20130280917A1

公开(公告)日：2013-10-24

申请号：US13918616

申请日：2013-06-14

Applicant: Lam Research Corporation

Inventor： William Thie ,  John M. Boyd ,  Fritz C. Redeker ,  Yezdi Dordi ,  John Parks ,  Tiruchirapalli Arunagiri ,  Aleksander Owczarz ,  Todd Balisky ,  Clint Thomas ,  Jacob Wylie ,  Alan M. Schoepp

IPC: H01L21/02

CPC classification number: H01L21/02104 ,  C23C18/1619 ,  H01L21/67005 ,  H01L21/6715

Abstract: A semiconductor wafer electroless plating apparatus includes a platen and a fluid bowl. The platen has a top surface defined to support a wafer, and an outer surface extending downward from a periphery of the top surface to a lower surface of the platen. The fluid bowl has an inner volume defined by an interior surface so as to receive the platen, and wafer to be supported thereon, within the inner volume. A seal is disposed around the interior surface of the fluid bowl so as to form a liquid tight barrier when engaged between the interior surface of the fluid bowl and the outer surface of the platen. A number of fluid dispense nozzles are positioned to dispense electroplating solution within the fluid bowl above the seal so as to rise up and flow over the platen, thereby flowing over the wafer when present on the platen.

Abstract translation: 半导体晶片化学镀设备包括压板和流体碗。 压板具有限定为支撑晶片的顶表面和从顶表面的周边向下延伸到压板的下表面的外表面。 流体碗具有由内表面限定的内部容积，以便在内部容积内容纳压板和要支撑在其上的晶片。 密封件设置在流体碗的内表面周围，以便当接合在流体碗的内表面和压板的外表面之间时形成液密屏障。 多个流体分配喷嘴被定位成在密封件上方的流体碗内分配电镀溶液，以便在压板上升起并流动，从而当存在于压板上时流过晶片。