公开(公告)号：US20150188012A1

公开(公告)日：2015-07-02

申请号：US14281777

申请日：2014-05-19

Applicant: LEXTAR ELECTRONICS CORPORATION

Inventor： Wen-Fei FONG ,  Wei-Chang YU

IPC: H01L33/62 ,  H01L27/15

CPC classification number: H01L33/62 ,  H01L27/153 ,  H01L27/156 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A light-emitting diode element is provided. N light-emitting diode chips are arranged on a substrate. Each light-emitting diode chip includes a first-type semiconductor layer, an active layer, a second-type semiconductor layer, a first electrode, and a second electrode. The first-type semiconductor layer is disposed on the substrate. The active layer is disposed on the first-type semiconductor layer to bare a surface of a portion of the first-type semiconductor layer. The second-type semiconductor layer is disposed on the active layer. The first and second electrode are disposed on the first-type and second-type semiconductor layers respectively. The second electrode is close to a side of the second-type semiconductor layer which is opposite side of the first-type semiconductor layer. First and second connection lines connect the first electrode of an i-th light-emitting diode chip and the second electrode of an (i+1)-th light-emitting diode chip among the light-emitting diode chips.

Abstract translation: 提供了一种发光二极管元件。 N个发光二极管芯片布置在基板上。 每个发光二极管芯片包括第一类型半导体层，有源层，第二类型半导体层，第一电极和第二电极。 第一类半导体层设置在基板上。 有源层设置在第一型半导体层上以露出第一型半导体层的一部分的表面。 第二类半导体层设置在有源层上。 第一和第二电极分别设置在第一和第二类型的半导体层上。 第二电极靠近与第一类型半导体层相对的第二类型半导体层的一侧。 第一和第二连接线将第i个发光二极管芯片的第一电极和第（i + 1）个发光二极管芯片的第二电极连接在发光二极管芯片中。

公开(公告)号：US20210280742A1

公开(公告)日：2021-09-09

申请号：US17033700

申请日：2020-09-26

Applicant: Lextar Electronics Corporation

Inventor： Pei-Shiu TSAI ,  Yi-Ju CHEN ,  Nai-Wei HSU ,  Wei-Chang YU

IPC: H01L33/10 ,  H01L33/62

Abstract: A light-emitting element is provided, including a semiconductor structure, a reflective structure, first and second insulating structures, a conductive structure, and first and second pads. The reflective structure is disposed on the semiconductor structure. The first insulating structure includes first and second protrusions covering first and second portions respectively, and a first recession exposes a third portion between the first and second portions. The conductive structure includes first and second conductive portion. The first conductive portion is disposed on the first protrusion to contact the semiconductor structure. The second conductive portion is disposed on the second protrusion to contact the third portion through the first recession. The first and second pads are respectively disposed on the first and second conductive portions. Each of the structures below the first and second pads are in flat-type bonding to enhance stress resistance.

公开(公告)号：US20150069451A1

公开(公告)日：2015-03-12

申请号：US14306115

申请日：2014-06-16

Applicant: Lextar Electronics Corporation

Inventor： Wan-Chun HUANG ,  Wei-Chang YU

IPC: H01L33/38

CPC classification number: H01L33/382 ,  H01L33/38

Abstract: An LED chip is disclosed. The LED chip includes a substrate and a semiconductor element formed on the substrate. A recess is formed on the semiconductor element so as to expose a first-type of semiconductor layer thereof to the environment. The LED chip also includes a conductive layer disposed on a second-type semiconductor layer of the semiconductor element, a first electrode disposed in the recess and electrically connected to the first-type of semiconductor layer, and a second electrode disposed on the conductive layer. In addition, the LED chip includes a first circular electrode disposed on the conductive layer and extending along an edge of the substrate and electrically connected to the second electrode.

Abstract translation: 公开了一种LED芯片。 LED芯片包括形成在基板上的基板和半导体元件。 在半导体元件上形成凹部以将其第一类半导体层暴露于环境中。 LED芯片还包括设置在半导体元件的第二类型半导体层上的导电层，设置在凹部中并电连接到第一类型半导体层的第一电极和设置在导电层上的第二电极。 此外，LED芯片包括设置在导电层上并沿基板的边缘延伸并电连接到第二电极的第一圆形电极。

公开(公告)号：US20150048385A1

公开(公告)日：2015-02-19

申请号：US14094971

申请日：2013-12-03

Applicant: Lextar Electronics Corporation

Inventor： Wei-Chang YU ,  Chien-Cheng CHANG ,  Chih-Sheng HSU

IPC: H01L33/02 ,  H01L21/3065

CPC classification number: H01L33/02 ,  H01L33/10 ,  H01L33/22 ,  H01L2933/0083

Abstract: A method of manufacturing a light emitting diode (LED) substrate includes following steps: providing a nano-patterned substrate, which has a plurality of convex portions and a plurality of first concave portions that are spaced apart from each other, wherein each first concave portion has a depth (d1); forming a plurality of protection structures to cover each convex portion, and exposing a bottom surface of each first concave portion; performing an anisotropic etching processing to etch the bottom surface of each first concave portion which is not covered by the protection structure so as to form a plurality of second concave portions having a depth (d2), and d2 is greater than d1.

Abstract translation: 一种制造发光二极管（LED）基板的方法包括以下步骤：提供具有多个凸起部分和彼此间隔开的多个第一凹部的纳米图案化基板，其中每个第一凹部 具有深度（d1）; 形成多个保护结构以覆盖每个凸部，并且暴露每个第一凹部的底面; 进行各向异性蚀刻处理以蚀刻未被保护结构覆盖的每个第一凹部的底面，以形成具有深度（d2）的多个第二凹部，并且d2大于d1。