公开(公告)号：US3887937A

公开(公告)日：1975-06-03

申请号：US29066672

申请日：1972-09-21

Applicant: MASSACHUSETTS INST TECHNOLOGY

Inventor： GATOS HARRY C ,  LAGOWSKI JACEK

IPC: G01L1/18 ,  G01N27/414 ,  H01L15/00

CPC classification number: B82Y15/00

Abstract: A semiconductor sensor adapted to detect with a high degree of sensitivity small magnitudes of a mechanical force, presence of traces of a gas or light. The sensor includes a high energy gap (i.e.,*1.0 electron volts) semiconductor wafer. Mechanical force is measured by employing a non-centrosymmetric material for the semiconductor. Distortion of the semiconductor by the force creates a contact potential difference (cpd) at the semiconductor surface, and this cpd is determined to give a measure of the force. When such a semiconductor is subjected to illumination with an energy less than the energy gap of the semiconductors, such illumination also creates a cpd at the surface. Detection of this cpd is employed to sense the illumination itself or, in a variation of the system, to detect a gas. When either a gas or light is to be detected and a crystal of a non-centrosymmetric material is employed, the presence of gas or light, in appropriate circumstances, results in a strain within the crystal which distorts the same and the distortion provides a mechanism for qualitative and quantitative evaluation of the gas or the light, as the case may be.

Abstract translation: 一种适于以高灵敏度检测机械力的小幅度，气体或光的痕迹的半导体传感器。 传感器包括高能隙（即DIFFERENCE 1.0电子伏）半导体晶片。 通过对半导体采用非中心对称材料来测量机械力。 通过力的半导体的失真在半导体表面产生接触电位差（cpd），该cpd被确定为给出力的量度。 当这种半导体以小于半导体的能隙的能量进行照明时，这种照明也在表面产生cpd。 该cpd的检测用于感测照明本身，或者在系统的变体中检测气体。 当要检测到气体或光，并且使用非中心对称材料的晶体时，在合适的情况下，气体或光的存在会导致晶体内的应变，其扭曲变形，并且变形提供机制 对气体或光的定性和定量评估（视情况而定）。

公开(公告)号：US3879235A

公开(公告)日：1975-04-22

申请号：US36903973

申请日：1973-06-11

Applicant: MASSACHUSETTS INST TECHNOLOGY

Inventor： GATOS HARRY C ,  WITT AUGUST F ,  LICHTENSTEIGER MANFRED

IPC: C30B19/00 ,  C30B19/10 ,  C30B29/40 ,  H01L21/208 ,  H01L7/38

CPC classification number: C30B19/103 ,  Y10S438/936

Abstract: A method of growing epitaxial layers from a solution in a solution-substrate system. An electrically conductive solution, consisting of one or more materials to be deposited upon the substrate, is placed in contact with the substrate. The temperature of the system is established and maintained at a level at which the solution is at or near saturation. An electric current is then passed across the interface between the solution and the substrate, the direction and magnitude of the current being chosen to effect cooling at the interface only, the remainder of the system being maintained at said equilibrium temperature.

Abstract translation: 从溶液 - 衬底系统中的溶液生长外延层的方法。 将要沉积在基底上的一种或多种材料组成的导电溶液放置成与基底接触。 系统的温度建立并保持在溶液处于或接近饱和的水平。 然后电流通过溶液和基底之间的界面，电流的方向和大小被选择为仅在界面处实现冷却，系统的其余部分保持在所述平衡温度。

公开(公告)号：US3689242A

公开(公告)日：1972-09-05

申请号：US3689242D

申请日：1970-02-16

Applicant: MASSACHUSETTS INST TECHNOLOGY

Inventor： PLATAKIS NICOLAOS S ,  GATOS HARRY C ,  WITT AUGUST F

IPC: C03B5/033 ,  C03B19/02 ,  C03B19/04 ,  C03B19/09 ,  H01L45/00 ,  H01S3/17 ,  C03B29/00 ,  C03B5/16

CPC classification number: H01S3/17 ,  C03B5/0338 ,  C03B19/02 ,  C03B19/04 ,  C03B19/095 ,  C03B2201/86

Abstract: A METHOD IS DISCLOSED FOR PREPARING AN ELECTRICALLY AND OPTICALLY ACTIVE MATERIAL, EITHER VITEOUS OR POLYCRYSTALLINE, THAT PROVIDES A MATERIAL THAT IS NON-POROUS, CONTAINS NO INCLUSIONS, IS CHEMICALLY HOMOGENEOUS, AND ONE THAT CAN BE CUT OR OTHERWISE FORMED TO SOME DESIRED UNIFORM GEOMETRICAL SHAPE. THE PROCESS DISCLOSED INCLUDES SUBJECTING THE COMPONENTS OF THE MATERIAL HELD WITHIN A SEALED AMPOULE OR OTHER CLOSED CONTAINER TO AN ELEVATED TEMPERATURE IN AN INERT ATMOSPHERE OR VACUUM FOR A TIME PERIOD LONG ENOUGH FOR THE COMPONENTS TO BECOME MOLTEN AND TO REACT CHEMICALLY WITH ONE ANOTHER. HEATO IS THEN WITHDRAWN FORM THE MOLTEN MATERIAL TO LOWER THE TEMPERATURE TO A VALUE AT WHICH A THIN LAYER OF MOLTEN MATERIALS ADHERES TO THE INNER SURFACE OF THE CONTAINER. RELATIVE MOVEMENT IS EFFECTED BETWEEN THE BULK OF THE MOLTEN MATERIAL AND THE THIN LAYER OF MELT THAT ADHERED TO THE INNER SURFACE, THE THIN LAYER BEING MOVED AWAY FROM THE BULK OF THE MELT TO ALLOW SOLIDICICATION THEREBY TO FORM A SOLIDIFIED LAYER. THE SOLIDIFIED LAYER IS ALTERNATELY BROUGHT INTO CONTACT WITH THE BULK OF THE MOLTEN MATERIAL TO PICK UP A THIN LAYER OF MELT AND REMOVED FROM SUCH CONTACT TO ALLOW THE THIN LAYER TO SOLIDIFY, THERE BEING A CONTINUED WITHDRAWAL OF HEAT FROM THE REGION OCCUPIED BY THE AMPOULE IN ORDER THAT THE SOLID LAYER WILL INCREASE IN THICKNESS LAYER UPON LAYER AS ADDITIONAL MOLTEN MATERIAL SOLIFIFIES.