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    HIGH MODULATION SPEED PIN-TYPE PHOTODIODE
    1.
    发明申请
    HIGH MODULATION SPEED PIN-TYPE PHOTODIODE 有权

    公开(公告)号：US20220246781A1

    公开(公告)日：2022-08-04

    申请号：US17249140

    申请日：2021-02-22

    Applicant: Mellanox Technologies, Ltd.

    Inventor： Yuri Berk ,  Vladimir Iakovlev ,  Tamir Sharkaz ,  Elad Mentovich ,  Matan Galanty ,  Itshak Kalifa ,  Paraskevas Bakopoulos

    IPC: H01L31/105 ,  H01L31/0304

    Abstract: Various embodiments of improved PIN-type photodiodes are provided. In an example embodiment, the PIN-type photodiode includes a p-type contact; an n-type contact; a first absorbing layer disposed between the p-type contact and the n-type contact; and a second absorbing layer disposed between the first absorbing layer and the n-type contact. The first absorbing layer is characterized by a first absorption coefficient and the second absorbing layer is characterized by a second absorption coefficient. The second absorption coefficient is greater than the first absorption coefficient. In another example embodiment, the PIN-type photodiode includes a p-type contact; an n-type contact; a first absorbing layer disposed between the p-type contact and the n-type contact; and a non-absorbing accelerating layer disposed between absorbing layers and non-absorbing drift layer and the n-type contact.

    HIGH-BANDWIDTH LASER WITH BALANCED INTRINSIC RESPONSE AND PARASITIC RESPONSE
    2.
    发明申请
    HIGH-BANDWIDTH LASER WITH BALANCED INTRINSIC RESPONSE AND PARASITIC RESPONSE 有权

    公开(公告)号：US20240388062A1

    公开(公告)日：2024-11-21

    申请号：US18198401

    申请日：2023-05-17

    Applicant: Mellanox Technologies, Ltd.

    Inventor： Itshak Kalifa ,  Elad Mentovich ,  Matan Galanty

    IPC: H01S5/183

    Abstract: High-bandwidth lasers having a balanced intrinsic response and parasitic response are described herein. For example, the present invention may be directed to a laser having an optimized parasitic transfer function and for which the bandwidth of the intrinsic response of the laser is increased by increasing a differential gain of the laser. The laser may balance increased bandwidth of the intrinsic transfer function due to increased cavity length with reduced bandwidth of the parasitic transfer function due to increased active resistance. For example, embodiments of the present invention may be directed to a laser configured to operate at an operating wavelength selected to maximize the bandwidth of the total response of the laser.

    VERTICAL-CAVITY SURFACE-EMITTING LASER (VCSEL) TUNED THROUGH APPLICATION OF MECHANICAL STRESS VIA A PIEZOELECTRIC MATERIAL
    3.
    发明申请
    VERTICAL-CAVITY SURFACE-EMITTING LASER (VCSEL) TUNED THROUGH APPLICATION OF MECHANICAL STRESS VIA A PIEZOELECTRIC MATERIAL 有权

    公开(公告)号：US20210126431A1

    公开(公告)日：2021-04-29

    申请号：US16665435

    申请日：2019-10-28

    Applicant: Mellanox Technologies, Ltd.

    Inventor： Eran Aharon ,  Itshak Kalifa ,  Elad Mentovich ,  Matan Galanty ,  Isabelle Cestier

    IPC: H01S5/183 ,  H01S5/06 ,  H01L41/113 ,  H01S5/42 ,  H01S5/40

    Abstract: A tunable vertical-cavity surface-emitting laser (VCSEL) is provided. The VCSEL includes a VCSEL emission structure, piezoelectric material, and a piezoelectric electrode. The VCSEL emission structure includes a first reflector; a second reflector; and an active cavity material structure disposed between the first and second reflectors. The active cavity material structure includes an active region. The piezoelectric material is mechanically coupled to the VCSEL emission structure such that when the piezoelectric material experiences a mechanical stress, the mechanical stress is transferred to the active cavity material structure of the VCSEL emission structure. The piezoelectric electrode is designed to cause an electric field within the piezoelectric material. The electric field causes the piezoelectric material to experience the mechanical stress, which causes the active cavity material structure to experience the mechanical stress, which causes the emission wavelength of the VCSEL to be modified from a nominal wavelength of the VCSEL.

    FABRICATION OF LOW-COST LONG WAVELENGTH VCSEL WITH OPTICAL CONFINEMENT CONTROL
    4.
    发明申请
    FABRICATION OF LOW-COST LONG WAVELENGTH VCSEL WITH OPTICAL CONFINEMENT CONTROL 有权

    公开(公告)号：US20220209503A1

    公开(公告)日：2022-06-30

    申请号：US17138623

    申请日：2020-12-30

    Applicant: Mellanox Technologies, Ltd.

    Inventor： Yuri Berk ,  Vladimir lakovlev ,  Tamir Sharkaz ,  Elad Mentovich ,  Matan Galanty ,  ltshak Kalifa

    IPC: H01S5/183 ,  H01S5/30 ,  H01S5/343 ,  H01S5/125 ,  H01S5/20 ,  H01S5/042

    Abstract: Several VCSEL devices for long wavelength applications in wavelength range of 1200-1600 nm are described. These devices include an active region between a semiconductor DBR on a GaAs wafer and a dielectric DBR regrown on the active region. The active region includes multi-quantum layers (MQLs) confined between the active n-InP and p-InAlAs layers and a tunnel junction layer above the MQLs. The semiconductor DBR is fused to the bottom of the active region by a wafer bonding process. The design simplifies integrating the reflectors and the active region stack by having only one wafer bonding followed by regrowth of the other layers including the dielectric DBR. An air gap is fabricated either in an n-InP layer of the active region or in an air gap spacer layer on top of the semiconductor DBR. The air gap enhances optical confinement of the VCSEL. The air gap may also contain a grating.

    VERTICAL-CAVITY SURFACE-EMITTING LASER WITH CHARACTERISTIC WAVELENGTH OF 910 NM
    5.
    发明申请
    VERTICAL-CAVITY SURFACE-EMITTING LASER WITH CHARACTERISTIC WAVELENGTH OF 910 NM 审中-公开

    公开(公告)号：US20200381897A1

    公开(公告)日：2020-12-03

    申请号：US16890149

    申请日：2020-06-02

    Applicant: Mellanox Technologies, Ltd.

    Inventor： Isabelle Cestier ,  Itshak Kalifa ,  Elad Mentovich ,  Matan Galanty

    IPC: H01S5/183 ,  H01S5/343

    Abstract: A vertical-cavity surface-emitting laser (VCSEL) and method of fabrication thereof is provided. The VCSEL includes a mesa structure disposed on a substrate. The mesa structure has a first reflector stack, a second reflector stack, and an active region disposed between the first and second reflector stacks. The active region is configured to cause the VCSEL to emit light having a characteristic wavelength of 910 nanometers. The active region includes alternating layers of quantum wells and barriers, the quantum wells having high indium content (up to 18%). The VCSEL features a first contact layer disposed at least partially on a surface of the mesa structure and configured to serve as an electrical signal layer and a second contact layer disposed at least partially about the mesa structure and configured to serve as an electrical ground.

    HIGH-BANDWIDTH LASER HAVING OPTIMIZED PARASITIC TRANSFER FUNCTION
    6.
    发明申请
    HIGH-BANDWIDTH LASER HAVING OPTIMIZED PARASITIC TRANSFER FUNCTION 有权

    公开(公告)号：US20240388053A1

    公开(公告)日：2024-11-21

    申请号：US18198407

    申请日：2023-05-17

    Applicant: Mellanox Technologies, Ltd.

    Inventor： Itshak Kalifa ,  Elad Mentovich ,  Matan Galanty

    IPC: H01S3/0941 ,  H01S3/08 ,  H01S5/30

    Abstract: High-bandwidth lasers having minimized parasitic responses are described herein. In some embodiments, the present invention may be directed to a laser having a minimized parasitic response that is achieved by decreasing the active resistance of the laser's active region and decreasing the active capacitance of the laser. For example, the laser may include an active region having an active resistance as well as mirror regions, where the mirror regions have average dopant densities that decrease the active resistance of the active region and decrease the active capacitance of the laser. By decreasing the active resistance and the active capacitance, the −3 dB frequency of the parasitic response is increased. By increasing the −3 dB frequency of the parasitic response, a total response of the laser (e.g., a combination of an intrinsic response and the parasitic response) has a higher −3 dB frequency, thereby allowing the laser to operate at higher bandwidths.

    High modulation speed PIN-type photodiode
    8.
    发明授权
    High modulation speed PIN-type photodiode 有权

    公开(公告)号：US12278304B2

    公开(公告)日：2025-04-15

    申请号：US17249140

    申请日：2021-02-22

    Applicant: Mellanox Technologies, Ltd.

    Inventor： Yuri Berk ,  Vladimir Iakovlev ,  Tamir Sharkaz ,  Elad Mentovich ,  Matan Galanty ,  Itshak Kalifa ,  Paraskevas Bakopoulos

    IPC: H01L31/105 ,  H01L31/0304

    Abstract: Various embodiments of improved PIN-type photodiodes are provided. In an example embodiment, the PIN-type photodiode includes a p-type contact; an n-type contact; a first absorbing layer disposed between the p-type contact and the n-type contact; and a second absorbing layer disposed between the first absorbing layer and the n-type contact. The first absorbing layer is characterized by a first absorption coefficient and the second absorbing layer is characterized by a second absorption coefficient. The second absorption coefficient is greater than the first absorption coefficient. In another example embodiment, the PIN-type photodiode includes a p-type contact; an n-type contact; a first absorbing layer disposed between the p-type contact and the n-type contact; and a non-absorbing accelerating layer disposed between absorbing layers and non-absorbing drift layer and the n-type contact.

    Wafer level analysis for VCSEL screening
    9.
    发明授权
    Wafer level analysis for VCSEL screening 有权

    公开(公告)号：US12224550B2

    公开(公告)日：2025-02-11

    申请号：US17156902

    申请日：2021-01-25

    Applicant: MELLANOX TECHNOLOGIES, LTD.

    Inventor： Tali Septon ,  Itshak Kalifa ,  Elad Mentovich ,  Matan Galanty ,  Yaakov Gridish ,  Hanan Shumacher ,  Vadim Balakhovski ,  Juan Jose Vegas Olmos

    IPC: H01S5/00

    Abstract: A method and system for analyzing Vertical-Cavity Surface-Emitting Lasers (VCSELs) on a wafer are provided. An illustrative method of is provided that includes: applying a stimulus to each of the plurality of VCSELs on the wafer; measuring, for each of the plurality of VCSELs, two or more VCSEL parameters responsive to the stimulus; correlating the measured two or more VCSEL parameters to define a value of a common performance characteristic; and identifying clusters of VCSELs having similar values of the common performance characteristic. The clusters of VCSELs may be determined to collectively meet or not meet an optical performance requirement defined for the VCSELs on the wafer.

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