Light-activated controlled radical polymerization

    公开(公告)号:US11733647B2

    公开(公告)日:2023-08-22

    申请号:US16840124

    申请日:2020-04-03

    Abstract: Techniques disclosed herein relate to holographic optical materials and elements. An example of a holographic recording material includes matrix monomers characterized by a first refractive index and configured to polymerize to form a polymer matrix, writing monomers dispersed in the matrix monomers and characterized by a second refractive index different from the first refractive index, and a photocatalyst for controlled radical polymerization of the writing monomers. The writing monomers are configured to polymerize upon exposed to recording light. The photocatalyst is dispersed in the matrix monomers. The photocatalyst includes, for example, a transition metal photocatalyst or a metal-free organic photocatalyst, such as a photocatalyst for atom transfer radical polymerization or a transition metal photocatalyst for addition fragmentation chain transfer polymerization.

    GRATINGS WITH VARIABLE DEPTHS FORMED USING PLANARIZATION FOR WAVEGUIDE DISPLAYS

    公开(公告)号:US20220326436A1

    公开(公告)日:2022-10-13

    申请号:US17849065

    申请日:2022-06-24

    Abstract: A manufacturing system performs a deposition of an etch-compatible film over a substrate. The etch-compatible film includes a first surface and a second surface opposite to the first surface. The manufacturing system performs a partial removal of the etch-compatible film to create a surface profile on the first surface with a plurality of depths relative to the substrate. The manufacturing system performs a deposition of a second material over the profile created in the etch-compatible film. The manufacturing system performs a planarization of the second material to obtain a plurality of etch heights of the second material in accordance with the plurality of depths in the profile created in the etch-compatible film. The manufacturing system performs a lithographic patterning of a photoresist deposited over the planarized second material to obtain the plurality of etch heights and one or more duty cycles in the second material.

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