公开(公告)号：US20230335496A1

公开(公告)日：2023-10-19

申请号：US18030158

申请日：2021-10-08

Applicant: MacDermid Enthone Inc.

Inventor： Frédéric RAYNAL ,  Vincent MEVELLEC ,  Mikailou THIAM ,  Amine LAKHDARI

IPC: H01L23/532 ,  H01L21/768 ,  H10B43/27

CPC classification number: H01L23/53238 ,  H01L21/76843 ,  H01L21/76877 ,  H10B43/27

Abstract: The invention relates to a process for fabricating a 3D-NAND flash memory comprising a first step of electrodepositing an alloy of copper and of a dopant metal selected from manganese and zinc followed by a second step of annealing the alloy to form a first layer of copper and a second layer comprising zinc or manganese, by demixing the alloy.

公开(公告)号：US20250137157A1

公开(公告)日：2025-05-01

申请号：US18836526

申请日：2023-04-04

Applicant: MacDermid Enthone Inc.

Inventor： Hermine Marie BERTHON ,  Mikailou THIAM ,  Louis CAILLARD ,  Yeeseul KIM

IPC: C25D3/38 ,  C25D5/02 ,  C25D7/12

Abstract: The present invention is directed to an electrolyte composition for depositing copper on a conductive surface. The composition contains a combination of two aromatic amines, a complexing agent for copper (II) ions, and an accelerator such as dithiodiglycolic acid, thioglycolic acid, thiourea, ammonium thiocyanate, thiocyanic acid, or combinations of the foregoing. The invention is also directed to a process for creating copper interconnects comprising a step of electroplating copper with said electrolyte into cavities. The electrolyte makes it possible to manufacture copper interconnects with an improved bottom-up effect during the copper filling electroplating step.

公开(公告)号：US20250051927A1

公开(公告)日：2025-02-13

申请号：US18717636

申请日：2023-02-07

Applicant: MacDermid Enthone Inc.

Inventor： Mikailou THIAM ,  Hermine Marie BERTHON ,  Amine LAKHDARI

IPC: C23C18/50 ,  C23C18/16 ,  C23C18/18 ,  C23C18/36 ,  H01L21/48 ,  H01L25/065 ,  H01L27/06

Abstract: A method of metallizing a semiconductor for the manufacture of three-dimensional semiconductor devices such as integrated circuits or storage memories. The metallization process includes a step of activating the surface, of a mineral oxide substrate with a noble metal, such as palladium, followed by a step of depositing a nickel or cobalt alloy containing boron and at least one of phosphorus and tungsten by electroless deposition.