公开(公告)号：US20230335496A1

公开(公告)日：2023-10-19

申请号：US18030158

申请日：2021-10-08

Applicant: MacDermid Enthone Inc.

Inventor： Frédéric RAYNAL ,  Vincent MEVELLEC ,  Mikailou THIAM ,  Amine LAKHDARI

IPC: H01L23/532 ,  H01L21/768 ,  H10B43/27

CPC classification number: H01L23/53238 ,  H01L21/76843 ,  H01L21/76877 ,  H10B43/27

Abstract: The invention relates to a process for fabricating a 3D-NAND flash memory comprising a first step of electrodepositing an alloy of copper and of a dopant metal selected from manganese and zinc followed by a second step of annealing the alloy to form a first layer of copper and a second layer comprising zinc or manganese, by demixing the alloy.

公开(公告)号：US20250137140A1

公开(公告)日：2025-05-01

申请号：US18836481

申请日：2023-03-30

Applicant: MacDermid Enthone Inc.

Inventor： Vincent MEVELLEC ,  Yeeseul KIM ,  Louis CAILLARD

IPC: C23C18/18 ,  C23C18/50

Abstract: A method of metallizing a dielectric substrate with a nickel-boron alloy or cobalt-boron alloy to deposit a thin layer of the alloy that exhibits good conductivity. The process includes an activation step that includes two stages of activation with a noble metal such as palladium. Thereafter, the dielectric substrate is metallized with a nickel-boron or cobalt-boron alloy by electroless deposition.